Estimating Terrestrial Neutron-Induced SEB Cross Sections and FIT Rates for High-Voltage SiC Power MOSFETs

Cross sections and failure in time rates for neutron-induced single-event burnout (SEB) are estimated for SiC power MOSFETs using a method based on combining results from heavy ion SEB experimental data, 3-D TCAD prediction of sensitive volumes, and Monte Carlo radiation transport simulations of sec...

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Published inIEEE transactions on nuclear science Vol. 66; no. 1; pp. 337 - 343
Main Authors Ball, D. R., Sierawski, B. D., Galloway, K. F., Johnson, R. A., Alles, M. L., Sternberg, A. L., Witulski, A. F., Reed, R. A., Schrimpf, R. D., Javanainen, A., Lauenstein, J.-M
Format Journal Article
LanguageEnglish
Published New York IEEE 01.01.2019
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Burnout
Computer simulation
Cross section
Experimental data
failure in time (FIT)
heavy ion
Heavy ions
High voltages
Ions
Monte Carlo
Monte Carlo radiative energy deposition (MRED)
MOSFET
MOSFETs
neutron
Neutrons
Nuclear cross sections
Particle production
power
Radiation
Radiation transport
Semiconductor process modeling
Silicon carbide
silicon carbide (SiC)
single-event burnout (SEB)
Solid modeling
Terrestrial environments
Three-dimensional displays
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Abstract Cross sections and failure in time rates for neutron-induced single-event burnout (SEB) are estimated for SiC power MOSFETs using a method based on combining results from heavy ion SEB experimental data, 3-D TCAD prediction of sensitive volumes, and Monte Carlo radiation transport simulations of secondary particle production. The results agree well with experimental data and are useful in understanding the mechanisms for neutron-induced SEB data.
AbstractList Cross sections and failure in time rates for neutron-induced single-event burnout (SEB) are estimated for SiC power MOSFETs using a method based on combining results from heavy ion SEB experimental data, 3-D TCAD prediction of sensitive volumes, and Monte Carlo radiation transport simulations of secondary particle production. The results agree well with experimental data and are useful in understanding the mechanisms for neutron-induced SEB data.
Author Witulski, A. F.
Lauenstein, J.-M
Alles, M. L.
Ball, D. R.
Sierawski, B. D.
Schrimpf, R. D.
Javanainen, A.
Johnson, R. A.
Sternberg, A. L.
Reed, R. A.
Galloway, K. F.
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Snippet Cross sections and failure in time rates for neutron-induced single-event burnout (SEB) are estimated for SiC power MOSFETs using a method based on combining...
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StartPage 337
SubjectTerms Burnout
Computer simulation
Cross section
Experimental data
failure in time (FIT)
heavy ion
Heavy ions
High voltages
Ions
Monte Carlo
Monte Carlo radiative energy deposition (MRED)
MOSFET
MOSFETs
neutron
Neutrons
Nuclear cross sections
Particle production
power
Radiation
Radiation transport
Semiconductor process modeling
Silicon carbide
silicon carbide (SiC)
single-event burnout (SEB)
Solid modeling
Terrestrial environments
Three-dimensional displays
Title Estimating Terrestrial Neutron-Induced SEB Cross Sections and FIT Rates for High-Voltage SiC Power MOSFETs
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