APA (7th ed.) Citation

Kim, Y., Park, J., & Sohn, H. (2018). Surface roughening of undoped and in situ B-doped SiGe epitaxial layers deposited by using reduced pressure chemical vapor deposition. Journal of the Korean Physical Society, 72(1), 101-106. https://doi.org/10.3938/jkps.72.101

Chicago Style (17th ed.) Citation

Kim, Youngmo, Jiwoo Park, and Hyunchul Sohn. "Surface Roughening of Undoped and in Situ B-doped SiGe Epitaxial Layers Deposited by Using Reduced Pressure Chemical Vapor Deposition." Journal of the Korean Physical Society 72, no. 1 (2018): 101-106. https://doi.org/10.3938/jkps.72.101.

MLA (9th ed.) Citation

Kim, Youngmo, et al. "Surface Roughening of Undoped and in Situ B-doped SiGe Epitaxial Layers Deposited by Using Reduced Pressure Chemical Vapor Deposition." Journal of the Korean Physical Society, vol. 72, no. 1, 2018, pp. 101-106, https://doi.org/10.3938/jkps.72.101.