Interstitial boron defects in Si
A theoretical investigation is made into the structure and properties of complexes formed between boron and other common impurities in Si, namely hydrogen, oxygen and carbon. Particular emphasis is placed on identifying the centres with those observed experimentally. It is shown that BiBs, an electr...
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| Published in | Physica. B, Condensed matter Vol. 340-342; pp. 505 - 508 |
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| Main Authors | , , , |
| Format | Journal Article |
| Language | English |
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Elsevier B.V
31.12.2003
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| Abstract | A theoretical investigation is made into the structure and properties of complexes formed between boron and other common impurities in Si, namely hydrogen, oxygen and carbon. Particular emphasis is placed on identifying the centres with those observed experimentally. It is shown that BiBs, an electrically inert defect that can be identified with the infrared absorption Q-centre, can readily bind a hydrogen atom. BiBsH may then be responsible for the Ev+0.51eV acceptor level seen in irradiated Si that contains hydrogen. BiOi has a (0/+) level close to Ec−0.23eV and may be detected after the loss of Bi. The anneal of BiOi can lead to the formation of BiCs which is stable to ∼400°C and has a level near Ev+0.29eV. |
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| AbstractList | A theoretical investigation is made into the structure and properties of complexes formed between boron and other common impurities in Si, namely hydrogen, oxygen and carbon. Particular emphasis is placed on identifying the centres with those observed experimentally. It is shown that BiBs, an electrically inert defect that can be identified with the infrared absorption Q-centre, can readily bind a hydrogen atom. BiBsH may then be responsible for the Ev+0.51eV acceptor level seen in irradiated Si that contains hydrogen. BiOi has a (0/+) level close to Ec−0.23eV and may be detected after the loss of Bi. The anneal of BiOi can lead to the formation of BiCs which is stable to ∼400°C and has a level near Ev+0.29eV. A theoretical investigation is made into the structure and properties of complexes formed between boron and other common impurities in Si, namely hydrogen, oxygen and carbon. Particular emphasis is placed on identifying the centres with those observed experimentally. It is shown that BiBs, an electrically inert defect that can be identified with the infrared absorption Q-centre, can readily bind a hydrogen atom. BiBsH may then be responsible for the Ev + 0.51 eV acceptor level seen in irradiated Si that contains hydrogen. BiOi has a (0/+) level close to Ec - 0.23 eV and may be detected after the loss of Bi. The anneal of BiOi can lead to the formation of BiCs which is stable to ~ 400 deg C and has a level near Ev + 0.29 eV. |
| Author | Adey, J. Jones, R. Goss, J.P. Briddon, P.R. |
| Author_xml | – sequence: 1 givenname: J. surname: Adey fullname: Adey, J. email: adey@excc.ex.ac.uk organization: School of Physics, University of Exeter, Exeter EX4 4QL, UK – sequence: 2 givenname: J.P. surname: Goss fullname: Goss, J.P. organization: School of Physics, University of Exeter, Exeter EX4 4QL, UK – sequence: 3 givenname: R. surname: Jones fullname: Jones, R. organization: School of Physics, University of Exeter, Exeter EX4 4QL, UK – sequence: 4 givenname: P.R. surname: Briddon fullname: Briddon, P.R. organization: Physics Centre, School of Natural Science, Newcastle upon Tyne, NE1 7RU, UK |
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| CitedBy_id | crossref_primary_10_1103_PhysRevB_96_195306 crossref_primary_10_1016_j_physb_2003_09_142 crossref_primary_10_1063_1_5010965 crossref_primary_10_1088_0953_8984_17_17_L01 crossref_primary_10_1063_1_4855415 crossref_primary_10_1103_PhysRevB_94_235210 crossref_primary_10_1007_s10853_019_03627_0 crossref_primary_10_1134_S1063782618070229 crossref_primary_10_4028_www_scientific_net_SSP_242_285 crossref_primary_10_1016_j_nimb_2006_10_024 crossref_primary_10_1103_PhysRevB_73_245210 crossref_primary_10_1109_TED_2011_2180532 |
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