Gate-tunable Thermoelectric Effects in a Graphene/WS2 van der Waals Heterostructure

Thermoelectric effects of Dirac fermions through a van der Waals (vdW) heterostructure consisting of graphene and tungsten diselenide (WS 2 ) are theoretically investigated. When the lattice temperature of the top graphene layer differs from that of the bottom graphene layer, thermally excited Dirac...

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Bibliographic Details
Published inJournal of the Korean Physical Society Vol. 73; no. 7; pp. 940 - 944
Main Authors Lee, Junho, Son, Minsol, Jeong, Hyebin, Sim, Injip, Myoung, Nojoon
Format Journal Article
LanguageEnglish
Published Seoul The Korean Physical Society 01.10.2018
Springer Nature B.V
한국물리학회
Subjects
Fermions
Graphene
Heterostructures
Mathematical and Computational Physics
Particle and Nuclear Physics
Physics
Physics and Astronomy
Seebeck effect
Theoretical
Thermoelectricity
Tungsten disulfide
물리학
Seebeck coefficient
Tunnel junction
Thermoelectric effects
Graphene
van der Waals Heterostructures
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Summary:Thermoelectric effects of Dirac fermions through a van der Waals (vdW) heterostructure consisting of graphene and tungsten diselenide (WS 2 ) are theoretically investigated. When the lattice temperature of the top graphene layer differs from that of the bottom graphene layer, thermally excited Dirac fermions can be transferred through the WS 2 layer, generating tunnel current. This thermoelectric tunnel current shows drastic changes in its characteristics as a consequence of gatevoltage tuning. The thermoelectric power of the proposed graphene–WS 2 vdW heterostructure is characterized by examining the Seebeck coefficient.
ISSN:0374-4884
1976-8524
DOI:10.3938/jkps.73.940