Stress-induced changes of thermal donor formation in heat-treated Czochralski-grown silicon
Formation processes of oxygen-related thermal donors in Czochralski-grown silicon annealed at T=450°C under high hydrostatic pressures at P⩾1GPa are studied by means of electrical and optical measurements. As for heat treatment of materials at atmospheric pressure, the formation of thermal double do...
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| Published in | Physica. B, Condensed matter Vol. 340-342; pp. 769 - 772 |
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| Main Authors | , , , , , , , , |
| Format | Journal Article |
| Language | English |
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Elsevier B.V
31.12.2003
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| Abstract | Formation processes of oxygen-related thermal donors in Czochralski-grown silicon annealed at T=450°C under high hydrostatic pressures at P⩾1GPa are studied by means of electrical and optical measurements. As for heat treatment of materials at atmospheric pressure, the formation of thermal double donors (TDDs) takes also place in Czochralski-grown silicon subjected to compressive stresses during heat treatment. However, their formation rate turned out to be much larger than that observed under normal conditions, even in carbon-rich materials. This strongly enhanced formation of thermal donors is believed to be due to increasing diffusivity of oxygen under pressures. In addition to the TDDs, other shallow and deep thermal donors are also making their appearance in silicon heat treated under high pressures. |
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| AbstractList | Formation processes of oxygen-related thermal donors in Czochralski-grown silicon annealed at T = 450 deg C under high hydrostatic pressures at P# > 1GPa are studied by means of electrical and optical measurements. As for heat treatment of materials at atmospheric pressure, the formation of thermal double donors (TDDs) takes also place in Czochralski-grown silicon subjected to compressive stresses during heat treatment. However, their formation rate turned out to be much larger than that observed under normal conditions, even in carbon-rich materials. This strongly enhanced formation of thermal donors is believed to be due to increasing diffusivity of oxygen under pressures. In addition to the TDDs, other shallow and deep thermal donors are also making their appearance in silicon heat treated under high pressures. Formation processes of oxygen-related thermal donors in Czochralski-grown silicon annealed at T=450°C under high hydrostatic pressures at P⩾1GPa are studied by means of electrical and optical measurements. As for heat treatment of materials at atmospheric pressure, the formation of thermal double donors (TDDs) takes also place in Czochralski-grown silicon subjected to compressive stresses during heat treatment. However, their formation rate turned out to be much larger than that observed under normal conditions, even in carbon-rich materials. This strongly enhanced formation of thermal donors is believed to be due to increasing diffusivity of oxygen under pressures. In addition to the TDDs, other shallow and deep thermal donors are also making their appearance in silicon heat treated under high pressures. |
| Author | Emtsev, V.V. Shmagin, V.B. Kryzhkov, D.I. Misiuk, A. Andreev, B.A. Davydov, V.Yu Poloskin, D.S. Oganesyan, G.A. Londos, C.A. |
| Author_xml | – sequence: 1 givenname: V.V. surname: Emtsev fullname: Emtsev, V.V. email: emtsev@mail.ioffe.ru organization: Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia – sequence: 2 givenname: B.A. surname: Andreev fullname: Andreev, B.A. organization: Institute for Physic of Microstructures, Russian Academy of Sciences, 603600 Nizhnyi Novgorod, Russia – sequence: 3 givenname: V.Yu surname: Davydov fullname: Davydov, V.Yu organization: Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia – sequence: 4 givenname: D.S. surname: Poloskin fullname: Poloskin, D.S. organization: Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia – sequence: 5 givenname: G.A. surname: Oganesyan fullname: Oganesyan, G.A. organization: Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia – sequence: 6 givenname: D.I. surname: Kryzhkov fullname: Kryzhkov, D.I. organization: Institute for Physic of Microstructures, Russian Academy of Sciences, 603600 Nizhnyi Novgorod, Russia – sequence: 7 givenname: V.B. surname: Shmagin fullname: Shmagin, V.B. organization: Institute for Physic of Microstructures, Russian Academy of Sciences, 603600 Nizhnyi Novgorod, Russia – sequence: 8 givenname: V.V. surname: Emtsev fullname: Emtsev, V.V. organization: Van der Waals–Zeeman Institute, University of Amsterdam, 1018XE Amsterdam, The Netherlands – sequence: 9 givenname: A. surname: Misiuk fullname: Misiuk, A. organization: Institute of Electron Technology, Al. Lotników, 32/4602-668 Warsaw, Poland – sequence: 10 givenname: C.A. surname: Londos fullname: Londos, C.A. organization: Department of Physics ,University of Athens, 157 84 Athens, Greece |
| BookMark | eNp9kD1PwzAQhi1UJNrCL2DJxJbgrzjxwIAqvqRKDMDEYDnOpXFJ7WKnoPLrMZSZW053ep-T7pmhifMOEDonuCCYiMt1se33sSkoxqzAsiCkPkJTUlcsp4SVEzTFkpKcl1ScoFmMa5yKVGSKXp_GADHm1rU7A21meu1WEDPfZWMPYaOHrPXOh6zzaRitd5l1WQ96zBOox4Qsvrzpgx7im81XwX-6LNrBGu9O0XGX1nD21-fo5fbmeXGfLx_vHhbXy9wwRsdcCGBcct62jTCEVdwITjFIw3TTyqqsSW1qySupiTCdKEF2lSCSN7jCuGINm6OLw91t8O87iKPa2GhgGLQDv4uK1kkLxSwF2SFogo8xQKe2wW502CuC1Y9ItVa_ItWPSIWlSiITdXWgIP3wYSGoaCy4ZMsGMKNqvf2X_wZWQX-u |
| CitedBy_id | crossref_primary_10_1088_0953_8984_17_22_023 crossref_primary_10_3897_j_moem_9_3_111530 crossref_primary_10_4028_www_scientific_net_SSP_108_109_181 crossref_primary_10_1134_S1027451007030111 crossref_primary_10_4028_www_scientific_net_SSP_131_133_351 crossref_primary_10_1016_j_nimb_2006_10_056 crossref_primary_10_1088_0268_1242_29_9_095008 crossref_primary_10_3897_j_moem_5_52500 |
| Cites_doi | 10.1016/j.physb.2003.09.272 10.1103/PhysRevB.62.10824 10.1002/pssb.200301535 10.1016/S0921-4526(98)00372-X 10.1063/1.119527 10.1007/BF00616290 10.1103/PhysRevB.46.4312 10.1016/0921-5107(95)01282-6 |
| ContentType | Journal Article |
| Copyright | 2003 Elsevier B.V. |
| Copyright_xml | – notice: 2003 Elsevier B.V. |
| DBID | AAYXX CITATION 7SP 7U5 8FD L7M |
| DOI | 10.1016/j.physb.2003.09.118 |
| DatabaseName | CrossRef Electronics & Communications Abstracts Solid State and Superconductivity Abstracts Technology Research Database Advanced Technologies Database with Aerospace |
| DatabaseTitle | CrossRef Solid State and Superconductivity Abstracts Technology Research Database Advanced Technologies Database with Aerospace Electronics & Communications Abstracts |
| DatabaseTitleList | Solid State and Superconductivity Abstracts |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering Physics |
| EISSN | 1873-2135 |
| EndPage | 772 |
| ExternalDocumentID | 10_1016_j_physb_2003_09_118 S0921452603007701 |
| GroupedDBID | --K --M -~X .~1 0R~ 123 1B1 1RT 1~. 1~5 29O 4.4 457 4G. 5VS 7-5 71M 8P~ 9JN AABNK AACTN AAEDW AAEPC AAIAV AAIKJ AAKOC AALRI AAOAW AAQFI AAXUO ABMAC ABNEU ABXDB ABXRA ABYKQ ACDAQ ACFVG ACGFS ACNCT ACNNM ACRLP ADBBV ADEZE ADIYS ADMUD AEKER AFFNX AFKWA AFTJW AGUBO AGYEJ AHHHB AIEXJ AIKHN AITUG AIVDX AJBFU AJOXV ALMA_UNASSIGNED_HOLDINGS AMFUW AMRAJ AXJTR BKOJK BLXMC CS3 EBS EFJIC EFLBG EJD EO8 EO9 EP2 EP3 FDB FIRID FNPLU FYGXN G-Q HZ~ IHE J1W K-O KOM M38 M41 MAGPM MO0 N9A O-L O9- OAUVE OGIMB OZT P-9 P2P PC. Q38 RIG RNS ROL RPZ SDF SDG SDP SES SPC SPCBC SPD SPG SSQ T5K TN5 VOH XOL XPP YNT ZMT ~02 ~G- 6TJ AAEDT AAQXK AAXKI AAYXX ABFNM ADVLN AEBSH AFJKZ AGHFR ASPBG AVWKF AZFZN BBWZM CITATION FEDTE FGOYB GBLVA HMV HVGLF H~9 MVM NDZJH P-8 R2- SEW SSZ WUQ XJT 7SP 7U5 8FD L7M |
| ID | FETCH-LOGICAL-c332t-66e34944ddb6c1374c6420e9c3abd975818c89479a16cf65e9f76194b070073b3 |
| IEDL.DBID | .~1 |
| ISSN | 0921-4526 |
| IngestDate | Sat Oct 05 04:31:30 EDT 2024 Thu Sep 26 15:35:03 EDT 2024 Fri Feb 23 02:19:20 EST 2024 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Keywords | 61.72.Ji 62.50.+P 71.55.Cn Compressive stress Silicon Thermal donors |
| Language | English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-LOGICAL-c332t-66e34944ddb6c1374c6420e9c3abd975818c89479a16cf65e9f76194b070073b3 |
| Notes | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
| PQID | 28003203 |
| PQPubID | 23500 |
| PageCount | 4 |
| ParticipantIDs | proquest_miscellaneous_28003203 crossref_primary_10_1016_j_physb_2003_09_118 elsevier_sciencedirect_doi_10_1016_j_physb_2003_09_118 |
| PublicationCentury | 2000 |
| PublicationDate | 2003-12-31 |
| PublicationDateYYYYMMDD | 2003-12-31 |
| PublicationDate_xml | – month: 12 year: 2003 text: 2003-12-31 day: 31 |
| PublicationDecade | 2000 |
| PublicationTitle | Physica. B, Condensed matter |
| PublicationYear | 2003 |
| Publisher | Elsevier B.V |
| Publisher_xml | – name: Elsevier B.V |
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| References_xml | – volume: 12 start-page: R335 year: 2000 ident: BIB4 publication-title: J. Phys.: Condens. Matter contributor: fullname: Newman – volume: 62 start-page: 10824 year: 2000 ident: BIB10 publication-title: Phys. Rev. B contributor: fullname: Öberg – volume: 49 start-page: 123 year: 1989 ident: BIB1 publication-title: Appl. Phys. A contributor: fullname: Hage – volume: 83–87 start-page: 404 year: 1992 ident: BIB3 publication-title: Mater. Sci. Forum contributor: fullname: Ammerlaan – volume: 253 start-page: 131 year: 1998 ident: BIB6 publication-title: Physica B contributor: fullname: Surma – volume: 71 start-page: 264 year: 1997 ident: BIB7 publication-title: Appl. Phys. Lett. contributor: fullname: Schmalz – volume: 235 start-page: 79 year: 2003 ident: BIB9 publication-title: Phys. Stat. Sol. (b) contributor: fullname: Shmagin – volume: 36 start-page: 30 year: 1996 ident: BIB5 publication-title: Mater. Sci. Eng. B contributor: fullname: Hartwig – volume: 46 start-page: 4312 year: 1992 ident: BIB2 publication-title: Phys. Rev. B contributor: fullname: Zulehner – volume: 21 start-page: 778 year: 1987 ident: BIB8 publication-title: Sov. Phys. Semicond. [Transl. by AIP] contributor: fullname: Schmalz – volume: 83–87 start-page: 404 year: 1992 ident: 10.1016/j.physb.2003.09.118_BIB3 publication-title: Mater. Sci. Forum contributor: fullname: Liesert – ident: 10.1016/j.physb.2003.09.118_BIB11 doi: 10.1016/j.physb.2003.09.272 – volume: 62 start-page: 10824 year: 2000 ident: 10.1016/j.physb.2003.09.118_BIB10 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.62.10824 contributor: fullname: Coutinho – volume: 21 start-page: 778 year: 1987 ident: 10.1016/j.physb.2003.09.118_BIB8 publication-title: Sov. Phys. Semicond. [Transl. by AIP] contributor: fullname: Daluda – volume: 235 start-page: 79 year: 2003 ident: 10.1016/j.physb.2003.09.118_BIB9 publication-title: Phys. Stat. Sol. (b) doi: 10.1002/pssb.200301535 contributor: fullname: Andreev – volume: 253 start-page: 131 year: 1998 ident: 10.1016/j.physb.2003.09.118_BIB6 publication-title: Physica B doi: 10.1016/S0921-4526(98)00372-X contributor: fullname: Antonova – volume: 71 start-page: 264 year: 1997 ident: 10.1016/j.physb.2003.09.118_BIB7 publication-title: Appl. Phys. Lett. doi: 10.1063/1.119527 contributor: fullname: Emtsev – volume: 12 start-page: R335 year: 2000 ident: 10.1016/j.physb.2003.09.118_BIB4 publication-title: J. Phys.: Condens. Matter contributor: fullname: Newman – volume: 49 start-page: 123 year: 1989 ident: 10.1016/j.physb.2003.09.118_BIB1 publication-title: Appl. Phys. A doi: 10.1007/BF00616290 contributor: fullname: Wagner – volume: 46 start-page: 4312 year: 1992 ident: 10.1016/j.physb.2003.09.118_BIB2 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.46.4312 contributor: fullname: Götz – volume: 36 start-page: 30 year: 1996 ident: 10.1016/j.physb.2003.09.118_BIB5 publication-title: Mater. Sci. Eng. B doi: 10.1016/0921-5107(95)01282-6 contributor: fullname: Misiuk |
| SSID | ssj0000171 |
| Score | 1.7660884 |
| Snippet | Formation processes of oxygen-related thermal donors in Czochralski-grown silicon annealed at T=450°C under high hydrostatic pressures at P⩾1GPa are studied by... Formation processes of oxygen-related thermal donors in Czochralski-grown silicon annealed at T = 450 deg C under high hydrostatic pressures at P# > 1GPa are... |
| SourceID | proquest crossref elsevier |
| SourceType | Aggregation Database Publisher |
| StartPage | 769 |
| SubjectTerms | Compressive stress Silicon Thermal donors |
| Title | Stress-induced changes of thermal donor formation in heat-treated Czochralski-grown silicon |
| URI | https://dx.doi.org/10.1016/j.physb.2003.09.118 https://search.proquest.com/docview/28003203 |
| Volume | 340-342 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV07T8MwELaqIiQYEBQQ5VE8MGKaxIkTj1VFVUDqUipVYohqx4XwSKo-FgZ-O3dOggpCDIyJbCu6sz_f59x9JuQihJg7AZrBEh45zI8CyZQnOAu0o3wtpZbKJsgORH_k346DcY10q1oYTKsssb_AdIvW5Zt2ac32LE3bQ0eiyjbE4xw1aWwNFzzi4rz6cNckpCzpwsYMW1fKQzbHC08PlBUFRbFTF2_--H13-oHTdvPp7ZKdMmqkneLD9kjNZA2yvaYl2CCbNpdTL_bJw9DWfzBg2-C3hBa1vQuaTylGe28wUJJn-Zx-FS7SNKMIysymnUOX7nuun-YwM19S9ohEnS7SV5gz2QEZ9a7vu31W3qHANOfekglhUIDGTxIltMtDXwPhcIzUfKISCWTBjXQk_VBOXKGnIjByag82FEABrH7FD0k9yzNzRKhjtKe0P4mUJ7H-VoaOEaEyUx0mKuRhk1xWtotnhVRGXOWQPcfW1HjpJY8dCbwjahJR2Tf-5vEYwPzvjueVN2JYC_iDY5KZfLWIPYh-uefw4_8OfUK2imQ9FHI8JfXlfGXOIOhYqpadVS2y0bm56w8-AWkz1nM |
| link.rule.ids | 315,786,790,4521,24144,27957,27958,45620,45714 |
| linkProvider | Elsevier |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV07T8MwELZQEQIGxFOUVz0wYprEqROPqKIqUFhoJSQGq3ZcCI-k6mNh4Ldz5yQIEGJgjWzLOtuf73PuviPkOAKfOwGawRIeeyyMW5LpQHDWMp4OjZRGahcgeyO6g_DyrnW3QNpVLgyGVZbYX2C6Q-vyS7O0ZnOcps1bT6LKNvjjHDVpMIdrEd15rN9w-u5_0ZByrAtbM2xeSQ-5IC98PtBOFRTVTn0s_fH79fQDqN3t01kna6XbSM-KmW2QBZttktUvYoKbZMkFc5rpFrm_dQkgDOg2LFxCi-TeKc1HFN29VxgoybN8Qj8zF2maUURl5uLOoUv7LTePE9iazyl7QKZOp-kLbJpsmww65_12l5VFFJjhPJgxISwq0IRJooXxeRQaYByelYYPdSKBLfixiWUYyaEvzEi0rBy5lw0NWADHX_MdUsvyzO4S6lkTaBMOYx1ITMCVkWdFpO3IRImOeFQnJ5Xt1LjQylBVENmTcqbGqpdceRKIR1wnorKv-rbkCtD8746NajUUHAb8wzHMbD6fqgDcXx54fO-_QzfIcrd_3VO9i5urfbJSRO6hquMBqc0mc3sIHshMH7kd9gF-P9gF |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Stress-induced+changes+of+thermal+donor+formation+in+heat-treated+Czochralski-grown+silicon&rft.jtitle=Physica.+B%2C+Condensed+matter&rft.au=Emtsev%2C+V.V.&rft.au=Andreev%2C+B.A.&rft.au=Davydov%2C+V.Yu&rft.au=Poloskin%2C+D.S.&rft.date=2003-12-31&rft.pub=Elsevier+B.V&rft.issn=0921-4526&rft.eissn=1873-2135&rft.volume=340-342&rft.spage=769&rft.epage=772&rft_id=info:doi/10.1016%2Fj.physb.2003.09.118&rft.externalDocID=S0921452603007701 |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0921-4526&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0921-4526&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0921-4526&client=summon |