Charge‐sharing read port with bitline pre‐charging and sensing scheme for low‐power SRAMs

• Published in: International journal of circuit theory and applications Vol. 45; no. 9; pp. 1231 - 1248
• Main Authors: Maroof, Naeem, Sohail, Muhammad, Shin, Hyunchul
• Format: Journal Article
• Language: English
• Published: Bognor Regis Wiley Subscription Services, Inc 01.09.2017
• Subjects: charge sharing; Charging; differential read; Electric potential; leakage suppression; low power; Random access memory; sense amplifier; SRAM; Static random access memory; Transistors; write driver

Summary In this paper, we present our decoupled differential read (DDR) port and bitline (BL) pre‐charging scheme. The proposed scheme allows the charge sharing between bitlines during the read operation. DDR port isolates the internal nodes, thus improves the read static noise margin and allows the...