Photoluminescence Studies in Irradiated Si-Doped Gallium Arsenide

• Published in: Japanese Journal of Applied Physics Vol. 12; no. 1; pp. 109 - 119
• Main Authors: Jeong, Manu, Shirafuji, Junji, Inuishi, Yoshio
• Format: Journal Article
• Language: English
• Published: The Japan Society of Applied Physics 1973; 公益社団法人 応用物理学会

In order to reveal the origin of the 1.40–1.42 eV band which is peculiar to Si-doped GaAs, elaborate investigations of photoluminescence spectra in irradiated and heat-treated Si-doped samples were carried out mainly at 77K. All experimental evidences supported the assignment that the band was cause...