Photoluminescence Studies in Irradiated Si-Doped Gallium Arsenide

In order to reveal the origin of the 1.40–1.42 eV band which is peculiar to Si-doped GaAs, elaborate investigations of photoluminescence spectra in irradiated and heat-treated Si-doped samples were carried out mainly at 77K. All experimental evidences supported the assignment that the band was cause...

Full description

Saved in:
Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 12; no. 1; pp. 109 - 119
Main Authors Jeong, Manu, Shirafuji, Junji, Inuishi, Yoshio
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 1973
公益社団法人 応用物理学会
Online AccessGet full text

Cover

More Information
Summary:In order to reveal the origin of the 1.40–1.42 eV band which is peculiar to Si-doped GaAs, elaborate investigations of photoluminescence spectra in irradiated and heat-treated Si-doped samples were carried out mainly at 77K. All experimental evidences supported the assignment that the band was caused from a complex of Si atom on As site with As vacancy. Unidentified emission bands at 1.305 and 1.44 eV were observed respectively in (Te + Si)-doped samples subject to electron irradiation and Si-doped samples fired in a dissociation As pressure.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.12.109