Giant magnetic moments in dilute magnetic semiconductors

The concentration dependence of the specific magnetic moment value at room temperature in dilute semiconductor titanium oxides doped with either Co or Fe has been investigated. This value was found to increase sharply at small concentrations of magnetic impurity. The magnetic moment of 22.9 μ B per...

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Published inJournal of magnetism and magnetic materials Vol. 320; no. 6; pp. 895 - 897
Main Authors Orlov, A.F., Balagurov, L.A., Konstantinova, A.S., Perov, N.S., Yarkin, D.G.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.03.2008
Subjects
Dilute magnetic semiconductor
Giant magnetic moment
Oxide semiconductor
75.60.Ej
75.50.Pp
Giant magnetic moment
Oxide semiconductor
75.30.Cr
Dilute magnetic semiconductor
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Abstract The concentration dependence of the specific magnetic moment value at room temperature in dilute semiconductor titanium oxides doped with either Co or Fe has been investigated. This value was found to increase sharply at small concentrations of magnetic impurity. The magnetic moment of 22.9 μ B per impurity atom has been revealed for TiO 2 doped with 0.15 at% Co, not yet reported in any semiconductor oxide systems. We conclude the observed giant magnetic moments are caused by the crystal lattice polarization at small impurity concentrations. The comparison with published data point to different types of the magnetization concentration dependence for various semiconductor matrixes that is probably related to the dielectric permittivity of the environment.
AbstractList The concentration dependence of the specific magnetic moment value at room temperature in dilute semiconductor titanium oxides doped with either Co or Fe has been investigated. This value was found to increase sharply at small concentrations of magnetic impurity. The magnetic moment of 22.9 μ B per impurity atom has been revealed for TiO 2 doped with 0.15 at% Co, not yet reported in any semiconductor oxide systems. We conclude the observed giant magnetic moments are caused by the crystal lattice polarization at small impurity concentrations. The comparison with published data point to different types of the magnetization concentration dependence for various semiconductor matrixes that is probably related to the dielectric permittivity of the environment.
The concentration dependence of the specific magnetic moment value at room temperature in dilute semiconductor titanium oxides doped with either Co or Fe has been investigated. This value was found to increase sharply at small concentrations of magnetic impurity. The magnetic moment of 22.9muB per impurity atom has been revealed for TiO2 doped with 0.15at% Co, not yet reported in any semiconductor oxide systems. We conclude the observed giant magnetic moments are caused by the crystal lattice polarization at small impurity concentrations. The comparison with published data point to different types of the magnetization concentration dependence for various semiconductor matrixes that is probably related to the dielectric permittivity of the environment.
Author Yarkin, D.G.
Perov, N.S.
Konstantinova, A.S.
Balagurov, L.A.
Orlov, A.F.
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Keywords 75.60.Ej
75.50.Pp
Giant magnetic moment
Oxide semiconductor
75.30.Cr
Dilute magnetic semiconductor
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Snippet The concentration dependence of the specific magnetic moment value at room temperature in dilute semiconductor titanium oxides doped with either Co or Fe has...
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SubjectTerms Dilute magnetic semiconductor
Giant magnetic moment
Oxide semiconductor
Title Giant magnetic moments in dilute magnetic semiconductors
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