Improvement of p-type GaAs0.51Sb0.49 metal-oxide-semiconductor interface properties by using ultrathin In0.53Ga0.47As interfacial layers

• Published in: Journal of applied physics Vol. 125; no. 21
• Main Authors: Gotow, Takahiro, Mitsuhara, Manabu, Hoshi, Takuya, Sugiyama, Hiroki, Takenaka, Mitsuru, Takagi, Shinichi
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 07.06.2019
• Subjects: Aluminum oxide; Applied physics; Capacitance; Computer simulation; Equivalent circuits; Indium gallium arsenides; Indium phosphides; Interfacial properties; Metal oxide semiconductors; Potential barriers; Resistance; Substrates

The effects of interfacial In0.53Ga0.47As layers on Al2O3/GaAs0.51Sb0.49 metal-oxide-semiconductor (MOS) structures on InP substrates have systematically been studied. It is found that the interfacial InGaAs layers can reduce Dit values of the Al2O3/GaAsSb MOS interfaces down to 3–4 × 1011 cm−2 eV−1...