Design of Wideband Third-Order Bandpass Filters Using Broadside-Coupled Resonators in 0.13- \mu m (Bi)-CMOS Technology
In this paper, two third-order bandpass filters (BPFs) designed for millimeter-wave applications are presented. Unlike previously published ones, the proposed designs use a "cell-based" approach, which utilizes identical broadside-coupled resonators (BCRs) with series and shunt capacitors....
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Published in | IEEE transactions on microwave theory and techniques Vol. 66; no. 12; pp. 5593 - 5604 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
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01.12.2018
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Abstract | In this paper, two third-order bandpass filters (BPFs) designed for millimeter-wave applications are presented. Unlike previously published ones, the proposed designs use a "cell-based" approach, which utilizes identical broadside-coupled resonators (BCRs) with series and shunt capacitors. The capacitors are mainly used as J-inverters to achieve the desired frequency responses. To fully understand the operational mechanism of the presented approach, both the BCR and BPFs are analyzed using the simplified LC-equivalent circuit models. To prove the concept, both BPFs are implemented in a standard 0.13-μm silicon-germanium bipolar complementary metal-oxide-semiconductor technology. According to the on-wafer measurement results, the BPFs exhibit the excellent performance including flat in-band responses with relatively large harmonic suppression. The first design has a 1-dB bandwidth from 23.9 to 39.7 GHz with an insertion loss of 3.9 dB at the center frequency of 31 GHz. The stopband attenuation is better than 45 dB at 58 GHz. The 1-dB bandwidth of the second design covers from 26.7 to 44.3 GHz with an insertion loss of 3.1 dB at the center frequency of 35 GHz, and stopband attenuation up to 35 dB is achieved at 59 GHz. Both designs occupy an identical area of 0.073 mm 2 (0.248 × 0.294 mm 2 ), excluding the G-S-G testing pads. |
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AbstractList | In this paper, two third-order bandpass filters (BPFs) designed for millimeter-wave applications are presented. Unlike previously published ones, the proposed designs use a "cell-based" approach, which utilizes identical broadside-coupled resonators (BCRs) with series and shunt capacitors. The capacitors are mainly used as J-inverters to achieve the desired frequency responses. To fully understand the operational mechanism of the presented approach, both the BCR and BPFs are analyzed using the simplified LC-equivalent circuit models. To prove the concept, both BPFs are implemented in a standard 0.13-μm silicon-germanium bipolar complementary metal-oxide-semiconductor technology. According to the on-wafer measurement results, the BPFs exhibit the excellent performance including flat in-band responses with relatively large harmonic suppression. The first design has a 1-dB bandwidth from 23.9 to 39.7 GHz with an insertion loss of 3.9 dB at the center frequency of 31 GHz. The stopband attenuation is better than 45 dB at 58 GHz. The 1-dB bandwidth of the second design covers from 26.7 to 44.3 GHz with an insertion loss of 3.1 dB at the center frequency of 35 GHz, and stopband attenuation up to 35 dB is achieved at 59 GHz. Both designs occupy an identical area of 0.073 mm 2 (0.248 × 0.294 mm 2 ), excluding the G-S-G testing pads. |
Author | Zhu, Xi Yang, Yang Zhu, He Xue, Quan |
Author_xml | – sequence: 1 givenname: He orcidid: 0000-0002-5157-8457 surname: Zhu fullname: Zhu, He email: he.zhu@uts.edu.au organization: School of Electrical and Data Engineering, University of Technology Sydney, Ultimo, NSW, Australia – sequence: 2 givenname: Xi orcidid: 0000-0002-5814-394X surname: Zhu fullname: Zhu, Xi email: xi.zhu@uts.edu.au organization: School of Electrical and Data Engineering, University of Technology Sydney, Ultimo, NSW, Australia – sequence: 3 givenname: Yang orcidid: 0000-0001-7439-2156 surname: Yang fullname: Yang, Yang email: yang.yang.au@ieee.org organization: School of Electrical and Data Engineering, University of Technology Sydney, Ultimo, NSW, Australia – sequence: 4 givenname: Quan orcidid: 0000-0002-4226-2127 surname: Xue fullname: Xue, Quan organization: School of Electronic and Information Engineering, South China University of Technology, Guangzhou, China |
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Cites_doi | 10.1109/TCSII.2010.2048395 10.1109/JSSC.2006.872737 10.1109/LED.2016.2520960 10.1109/TCSI.2012.2206499 10.1109/TMTT.2005.862709 10.1109/TMTT.2008.921638 10.1109/LMWC.2017.2734771 10.1109/LED.2010.2043333 10.1109/LED.2013.2265165 10.1109/TMTT.2010.2042857 10.1109/TMTT.2013.2269293 10.1109/TCSII.2008.922427 10.1109/LED.2017.2739186 10.1109/TMTT.2009.2035871 10.1109/TMTT.2007.892817 10.1109/LED.2007.891305 10.1109/LMWC.2016.2597219 10.1002/0471221619 10.1109/LED.2017.2690283 10.1109/TMTT.2010.2050246 10.1109/LED.2007.915369 10.1109/TED.2012.2186301 10.1109/MMM.2008.927634 |
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SubjectTerms | Band-pass filters Bandpass filter (BPF) bipolar complementary metal–oxide–semiconductor [(Bi)-CMOS] broadside-coupled resonator (BCR) Harmonics suppression Loss measurement Metals millimeter wave (mm-wave) miniaturization on-chip resonator radio frequency (RF) integrated circuit Resonant frequency Resonators silicon–germanium System-on-chip |
Title | Design of Wideband Third-Order Bandpass Filters Using Broadside-Coupled Resonators in 0.13- \mu m (Bi)-CMOS Technology |
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