Design of Wideband Third-Order Bandpass Filters Using Broadside-Coupled Resonators in 0.13- \mu m (Bi)-CMOS Technology

In this paper, two third-order bandpass filters (BPFs) designed for millimeter-wave applications are presented. Unlike previously published ones, the proposed designs use a "cell-based" approach, which utilizes identical broadside-coupled resonators (BCRs) with series and shunt capacitors....

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Published inIEEE transactions on microwave theory and techniques Vol. 66; no. 12; pp. 5593 - 5604
Main Authors Zhu, He, Zhu, Xi, Yang, Yang, Xue, Quan
Format Journal Article
LanguageEnglish
Published IEEE 01.12.2018
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Abstract In this paper, two third-order bandpass filters (BPFs) designed for millimeter-wave applications are presented. Unlike previously published ones, the proposed designs use a "cell-based" approach, which utilizes identical broadside-coupled resonators (BCRs) with series and shunt capacitors. The capacitors are mainly used as J-inverters to achieve the desired frequency responses. To fully understand the operational mechanism of the presented approach, both the BCR and BPFs are analyzed using the simplified LC-equivalent circuit models. To prove the concept, both BPFs are implemented in a standard 0.13-μm silicon-germanium bipolar complementary metal-oxide-semiconductor technology. According to the on-wafer measurement results, the BPFs exhibit the excellent performance including flat in-band responses with relatively large harmonic suppression. The first design has a 1-dB bandwidth from 23.9 to 39.7 GHz with an insertion loss of 3.9 dB at the center frequency of 31 GHz. The stopband attenuation is better than 45 dB at 58 GHz. The 1-dB bandwidth of the second design covers from 26.7 to 44.3 GHz with an insertion loss of 3.1 dB at the center frequency of 35 GHz, and stopband attenuation up to 35 dB is achieved at 59 GHz. Both designs occupy an identical area of 0.073 mm 2 (0.248 × 0.294 mm 2 ), excluding the G-S-G testing pads.
AbstractList In this paper, two third-order bandpass filters (BPFs) designed for millimeter-wave applications are presented. Unlike previously published ones, the proposed designs use a "cell-based" approach, which utilizes identical broadside-coupled resonators (BCRs) with series and shunt capacitors. The capacitors are mainly used as J-inverters to achieve the desired frequency responses. To fully understand the operational mechanism of the presented approach, both the BCR and BPFs are analyzed using the simplified LC-equivalent circuit models. To prove the concept, both BPFs are implemented in a standard 0.13-μm silicon-germanium bipolar complementary metal-oxide-semiconductor technology. According to the on-wafer measurement results, the BPFs exhibit the excellent performance including flat in-band responses with relatively large harmonic suppression. The first design has a 1-dB bandwidth from 23.9 to 39.7 GHz with an insertion loss of 3.9 dB at the center frequency of 31 GHz. The stopband attenuation is better than 45 dB at 58 GHz. The 1-dB bandwidth of the second design covers from 26.7 to 44.3 GHz with an insertion loss of 3.1 dB at the center frequency of 35 GHz, and stopband attenuation up to 35 dB is achieved at 59 GHz. Both designs occupy an identical area of 0.073 mm 2 (0.248 × 0.294 mm 2 ), excluding the G-S-G testing pads.
Author Zhu, Xi
Yang, Yang
Zhu, He
Xue, Quan
Author_xml – sequence: 1
  givenname: He
  orcidid: 0000-0002-5157-8457
  surname: Zhu
  fullname: Zhu, He
  email: he.zhu@uts.edu.au
  organization: School of Electrical and Data Engineering, University of Technology Sydney, Ultimo, NSW, Australia
– sequence: 2
  givenname: Xi
  orcidid: 0000-0002-5814-394X
  surname: Zhu
  fullname: Zhu, Xi
  email: xi.zhu@uts.edu.au
  organization: School of Electrical and Data Engineering, University of Technology Sydney, Ultimo, NSW, Australia
– sequence: 3
  givenname: Yang
  orcidid: 0000-0001-7439-2156
  surname: Yang
  fullname: Yang, Yang
  email: yang.yang.au@ieee.org
  organization: School of Electrical and Data Engineering, University of Technology Sydney, Ultimo, NSW, Australia
– sequence: 4
  givenname: Quan
  orcidid: 0000-0002-4226-2127
  surname: Xue
  fullname: Xue, Quan
  organization: School of Electronic and Information Engineering, South China University of Technology, Guangzhou, China
BookMark eNp9kEtLAzEQgINUsFV_gHjJUQ-pySbZ7B5tfUJLQVe8CEu6mbSRbVKSVfDfu6XiwYOnYR7fzPCN0MAHDwidMTpmjJZX1byqxhllxTgrFOciO0BDJqUiZa7oAA1p3yKlKOgRGqX03qdC0mKIPm8guZXHweJXZ2CpvcHV2kVDFtFAxJO-sNUp4TvXdhATfknOr_AkBm1SD5Bp-Ni2YPATpOB1F_oR53H_FSf4bfOBN_hi4i7JdL54xhU0ax_asPo6QYdWtwlOf-Ixerm7raYPZLa4f5xez0jDOetIkamyAJnZ3HBlhRS5Mlrk3JaiAd4Yq2xuIVsKIaS0uRAgCqaWfZUvG9sIfozYfm8TQ0oRbL2NbqPjV81ovRNX78TVO3H1j7ieUX-YxnW6c8F3Ubv2X_J8TzoA-L1USMqkovwbYsh8yg
CODEN IETMAB
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Cites_doi 10.1109/TCSII.2010.2048395
10.1109/JSSC.2006.872737
10.1109/LED.2016.2520960
10.1109/TCSI.2012.2206499
10.1109/TMTT.2005.862709
10.1109/TMTT.2008.921638
10.1109/LMWC.2017.2734771
10.1109/LED.2010.2043333
10.1109/LED.2013.2265165
10.1109/TMTT.2010.2042857
10.1109/TMTT.2013.2269293
10.1109/TCSII.2008.922427
10.1109/LED.2017.2739186
10.1109/TMTT.2009.2035871
10.1109/TMTT.2007.892817
10.1109/LED.2007.891305
10.1109/LMWC.2016.2597219
10.1002/0471221619
10.1109/LED.2017.2690283
10.1109/TMTT.2010.2050246
10.1109/LED.2007.915369
10.1109/TED.2012.2186301
10.1109/MMM.2008.927634
ContentType Journal Article
DBID 97E
RIA
RIE
AAYXX
CITATION
DOI 10.1109/TMTT.2018.2873342
DatabaseName IEEE All-Society Periodicals Package (ASPP) 2005–Present
IEEE All-Society Periodicals Package (ASPP) 1998–Present
IEEE Electronic Library (IEL)
CrossRef
DatabaseTitle CrossRef
DatabaseTitleList
Database_xml – sequence: 1
  dbid: RIE
  name: IEEE Electronic Library (IEL)
  url: https://proxy.k.utb.cz/login?url=https://ieeexplore.ieee.org/
  sourceTypes: Publisher
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
EISSN 1557-9670
EndPage 5604
ExternalDocumentID 10_1109_TMTT_2018_2873342
8501570
Genre orig-research
GrantInformation_xml – fundername: Guangdong Innovative and Entrepreneurial Research Team Program
  grantid: 2017ZT07X032
  funderid: 10.13039/100012541
– fundername: Australian Research Council
  grantid: DE160101032
  funderid: 10.13039/501100000923
GroupedDBID -~X
.GJ
0R~
29I
3EH
4.4
5GY
5VS
66.
6IK
85S
97E
AAJGR
AARMG
AASAJ
AAWTH
ABAZT
ABQJQ
ABVLG
ACGFO
ACGFS
ACIWK
ACNCT
AENEX
AETIX
AGQYO
AGSQL
AHBIQ
AI.
AIBXA
AKJIK
AKQYR
ALLEH
ALMA_UNASSIGNED_HOLDINGS
ATWAV
BEFXN
BFFAM
BGNUA
BKEBE
BPEOZ
CS3
DU5
EBS
EJD
F5P
HZ~
H~9
IAAWW
IBMZZ
ICLAB
IDIHD
IFIPE
IFJZH
IPLJI
JAVBF
LAI
M43
O9-
OCL
P2P
RIA
RIE
RNS
RXW
TAE
TAF
TN5
VH1
VJK
VOH
AAYXX
CITATION
RIG
ID FETCH-LOGICAL-c331t-82798e52f6d37f45467da463f94ce3cdf7f6fe2b44455f644e4817b7f63bcfc43
IEDL.DBID RIE
ISSN 0018-9480
IngestDate Thu Apr 24 23:09:08 EDT 2025
Tue Jul 01 02:00:11 EDT 2025
Wed Aug 27 08:35:49 EDT 2025
IsPeerReviewed true
IsScholarly true
Issue 12
Language English
License https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-c331t-82798e52f6d37f45467da463f94ce3cdf7f6fe2b44455f644e4817b7f63bcfc43
ORCID 0000-0002-5814-394X
0000-0001-7439-2156
0000-0002-5157-8457
0000-0002-4226-2127
PageCount 12
ParticipantIDs crossref_primary_10_1109_TMTT_2018_2873342
crossref_citationtrail_10_1109_TMTT_2018_2873342
ieee_primary_8501570
ProviderPackageCode CITATION
AAYXX
PublicationCentury 2000
PublicationDate 2018-Dec.
2018-12-00
PublicationDateYYYYMMDD 2018-12-01
PublicationDate_xml – month: 12
  year: 2018
  text: 2018-Dec.
PublicationDecade 2010
PublicationTitle IEEE transactions on microwave theory and techniques
PublicationTitleAbbrev TMTT
PublicationYear 2018
Publisher IEEE
Publisher_xml – name: IEEE
References ref15
ref14
ref11
yang (ref10) 2010; 58
ref2
ref1
ref17
ref16
yang (ref21) 2018
ref19
ref18
yang (ref12) 2010; 57
ref24
ref23
ref26
ref25
ref20
mongia (ref22) 2007
ref7
ref9
ref4
ref3
ref6
ref5
hsu (ref8) 2008; 29
matthaei (ref27) 1980
chang (ref13) 2010; 58
References_xml – volume: 57
  start-page: 522
  year: 2010
  ident: ref12
  article-title: Design of a $K$ -band chip filter with three tunable transmission zeros using a standard 0.13- $\mu\text{m}$ CMOS technology
  publication-title: IEEE Trans Circuits Syst II Exp Briefs
  doi: 10.1109/TCSII.2010.2048395
– ident: ref4
  doi: 10.1109/JSSC.2006.872737
– ident: ref16
  doi: 10.1109/LED.2016.2520960
– ident: ref5
  doi: 10.1109/TCSI.2012.2206499
– volume: 58
  start-page: 3850
  year: 2010
  ident: ref13
  article-title: Compact millimeter-wave CMOS bandpass filters using grounded pedestal stepped-impedance technique
  publication-title: IEEE Trans Microw Theory Techn
– ident: ref23
  doi: 10.1109/TMTT.2005.862709
– ident: ref25
  doi: 10.1109/TMTT.2008.921638
– ident: ref20
  doi: 10.1109/LMWC.2017.2734771
– year: 2007
  ident: ref22
  publication-title: RF and Microwave Coupled-Line Circuits
– ident: ref11
  doi: 10.1109/LED.2010.2043333
– ident: ref15
  doi: 10.1109/LED.2013.2265165
– start-page: 1095
  year: 2018
  ident: ref21
  article-title: Integrated third-order millimeter-wave on-chip bandpass filter using 0.13- $\mu\text{m}$ SiGe Bi-CMOS technology
  publication-title: IEEE MTT-S Int Microw Symp Dig
– ident: ref2
  doi: 10.1109/TMTT.2010.2042857
– ident: ref3
  doi: 10.1109/TMTT.2013.2269293
– ident: ref9
  doi: 10.1109/TCSII.2008.922427
– ident: ref19
  doi: 10.1109/LED.2017.2739186
– volume: 58
  start-page: 176
  year: 2010
  ident: ref10
  article-title: Analysis and design of a chip filter with low insertion loss and two adjustable transmission zeros using 0.18- $\mu\text{m}$ CMOS technology
  publication-title: IEEE Trans Microw Theory Techn
  doi: 10.1109/TMTT.2009.2035871
– ident: ref7
  doi: 10.1109/TMTT.2007.892817
– ident: ref6
  doi: 10.1109/LED.2007.891305
– ident: ref17
  doi: 10.1109/LMWC.2016.2597219
– ident: ref24
  doi: 10.1002/0471221619
– ident: ref18
  doi: 10.1109/LED.2017.2690283
– ident: ref1
  doi: 10.1109/TMTT.2010.2050246
– year: 1980
  ident: ref27
  publication-title: Microwave Filter Impedance-Matching Networks and Coupling Structures
– volume: 29
  start-page: 246
  year: 2008
  ident: ref8
  article-title: A 60-GHz millimeter-wave bandpass filter using 0.18- $\mu\text{m}$ CMOS technology
  publication-title: IEEE Electron Device Lett
  doi: 10.1109/LED.2007.915369
– ident: ref14
  doi: 10.1109/TED.2012.2186301
– ident: ref26
  doi: 10.1109/MMM.2008.927634
SSID ssj0014508
Score 2.4643471
Snippet In this paper, two third-order bandpass filters (BPFs) designed for millimeter-wave applications are presented. Unlike previously published ones, the proposed...
SourceID crossref
ieee
SourceType Enrichment Source
Index Database
Publisher
StartPage 5593
SubjectTerms Band-pass filters
Bandpass filter (BPF)
bipolar complementary metal–oxide–semiconductor [(Bi)-CMOS]
broadside-coupled resonator (BCR)
Harmonics suppression
Loss measurement
Metals
millimeter wave (mm-wave)
miniaturization
on-chip resonator
radio frequency (RF) integrated circuit
Resonant frequency
Resonators
silicon–germanium
System-on-chip
Title Design of Wideband Third-Order Bandpass Filters Using Broadside-Coupled Resonators in 0.13- \mu m (Bi)-CMOS Technology
URI https://ieeexplore.ieee.org/document/8501570
Volume 66
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1JS8NAFB5qT3pwF-vGHDyoOG2SmSSTo60WEaoHI3oQQmbDYJsWbTz4652XpHVBxFt4zMDAN5n3vrcidOhSo61mSIkb-ZIwEWgiUiOIomBOaCjXBYf-4Dq4vGNXD_5DA53Oa2G01mXymW7DZxnLV2NZgKusw32rvEJL0BcscatqteYRA-Y79atrf2DGZxFM14k68SCOIYmLty09oJR533TQl6EqpU7pr6DB7DRVKslzu5iKtnz_0ajxv8ddRcu1cYnPqtuwhho6X0dLX1oObqC38zJlA48Nvs-UFmmucPyUvShyA004cdcKJtagxv0M4uivuMwpwJatpwome5LeuJgMtcLg98-Bsb_iLMcw2YLgx1GBR_iomx2T3uDmFn_67TfRXf8i7l2SevYCkZS6U8K9MOLa90ygaGiYb99TlbKAmohJTaUyoQksyoIx5vvGGlWacTcUVkqFNJLRLdTMx7neRlg4glMZqdRwyVwTWPipSCnEQz2PS9NCzgyNRNaNyWE-xjApCYoTJQBgAgAmNYAtdDLfMqm6cvy1eAOwmS-sYdn5XbyLFmFzlbGyh5rTl0LvW7tjKg7KC_cBZIbSoQ
linkProvider IEEE
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwzV1Lb9QwEB6VcgAOvAqiPH0ACZC8TWIncQ49sFtWW9ptD6Sih0ohfqlR22S1uwHR39K_0v-GJ8kuBSFulbhFlmPF8SfP65sZgNc-s8ZJhpz6Sagol5GhMreSaobqhMF0XXToj_ei0QH_dBgersDFMhfGGNOQz0wPH5tYvq5Uja6yDRE64RV7HYVyx_z47gy02eb2ljvNN0Ew_JgORrTrIUAVY_6ciiBOhAkDG2kWWx66e0HnPGI24cowpW1sI_e1knMehtYpB4YLP5ZulEllFWdu3Rtw0-kZYdBmhy1jFDz0unveXRlcLGKmvpdspOM0RdqY6DmDhDEe_Cb1rrRxaaTY8B5cLvbfkldOevVc9tT5H6Uh_9cfdB_uduoz-dDi_QGsmPIh3LlSVHENvm01pBRSWfKl0EbmpSbpcTHVdB_LjJK-G5g4k4EMC2QKzEjDmiD9aZVr7F1KB1U9OTWaYGSjRJ_EjBQlwd4dlByd1eSMvO0X7-hgvP-Z_IpMPIKDa9n4Y1gtq9I8ASI9KZhKdG6F4r6NHMCZzBlGfINAKLsO3uL0M9WVXscOIKdZY4J5SYaAyRAwWQeYdXi_fGXS1h351-Q1xMJyYgeDp38ffgW3Rul4N9vd3tt5BrdxoZaf8xxW59PavHBa1ly-bMBO4Ot1g-cnkdMwWQ
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Design+of+Wideband+Third-Order+Bandpass+Filters+Using+Broadside-Coupled+Resonators+in+0.13-%24%5Cmu%24+m+%28Bi%29-CMOS+Technology&rft.jtitle=IEEE+transactions+on+microwave+theory+and+techniques&rft.au=Zhu%2C+He&rft.au=Zhu%2C+Xi&rft.au=Yang%2C+Yang&rft.au=Xue%2C+Quan&rft.date=2018-12-01&rft.issn=0018-9480&rft.eissn=1557-9670&rft.volume=66&rft.issue=12&rft.spage=5593&rft.epage=5604&rft_id=info:doi/10.1109%2FTMTT.2018.2873342&rft.externalDBID=n%2Fa&rft.externalDocID=10_1109_TMTT_2018_2873342
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0018-9480&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0018-9480&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0018-9480&client=summon