Temperature dependence of the threshold voltage of AlGaN/GaN/SiC high electron mobility transistors

• Published in: Semiconductor science and technology Vol. 31; no. 12; pp. 125016 - 125023
• Main Authors: Alim, Mohammad A, Rezazadeh, Ali A, Gaquiere, Christophe
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.12.2016
• Subjects: AlGaN/GaN HEMTs fabricated on SiC substrate; analytical model; drain-source voltage; shifts; temperature; threshold voltage

Shifts in the threshold voltage VT subject to temperature in AlGaN/GaN-based high-electron-mobility transistors (HEMTs) grown on silicon carbide substrate are reported. Variation of VT with drain-source voltage and temperature is investigated, including experimental characterization, modelling and a...