Band gap narrowing induced by oxygen vacancies in reactively sputtered TiO2 thin films
•TiO2 thin films were deposited by reactive magnetron sputtering.•Oxygen vacancy concentration was modulated by tuning the oxygen partial pressure.•Oxygen vacancies concentration narrows the optical bandgap of TiO2 films. Amorphous TiO2-x thin films were deposited using direct current reactive magne...
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| Published in | Thin solid films Vol. 769; p. 139737 |
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| Main Authors | , , , , , , |
| Format | Journal Article |
| Language | English |
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Elsevier B.V
31.03.2023
Elsevier |
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| Abstract | •TiO2 thin films were deposited by reactive magnetron sputtering.•Oxygen vacancy concentration was modulated by tuning the oxygen partial pressure.•Oxygen vacancies concentration narrows the optical bandgap of TiO2 films.
Amorphous TiO2-x thin films were deposited using direct current reactive magnetron sputtering. It was possible to tune the defect concentration by controlling the oxygen flow rate during the deposition process. The operating deposition regime has a significant influence on the properties of the TiO2-x film. The refractive index was found to decrease with increasing oxygen flow rate, which was essentially related to changes in film density. Besides this, increasing the oxygen vacancy defect concentration induced a slight decrease in the optical bandgap, as well as widening of the defect's Urbach band tails near the conduction band edge. For TiO2-x films deposited in oxygen-deficient conditions, the decrease in optical bandgap and widening of Urbach tails induced the shift of the Fermi level towards the conduction band, which enhanced the concentration of the charge carriers. |
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| AbstractList | •TiO2 thin films were deposited by reactive magnetron sputtering.•Oxygen vacancy concentration was modulated by tuning the oxygen partial pressure.•Oxygen vacancies concentration narrows the optical bandgap of TiO2 films.
Amorphous TiO2-x thin films were deposited using direct current reactive magnetron sputtering. It was possible to tune the defect concentration by controlling the oxygen flow rate during the deposition process. The operating deposition regime has a significant influence on the properties of the TiO2-x film. The refractive index was found to decrease with increasing oxygen flow rate, which was essentially related to changes in film density. Besides this, increasing the oxygen vacancy defect concentration induced a slight decrease in the optical bandgap, as well as widening of the defect's Urbach band tails near the conduction band edge. For TiO2-x films deposited in oxygen-deficient conditions, the decrease in optical bandgap and widening of Urbach tails induced the shift of the Fermi level towards the conduction band, which enhanced the concentration of the charge carriers. |
| ArticleNumber | 139737 |
| Author | Machon, Denis Jaouad, Abdelatif Drouin, Dominique Mesoudy, Abdelouadoud El Alibart, Fabien Ruediger, Andreas Ecoffey, Serge |
| Author_xml | – sequence: 1 givenname: Abdelouadoud El orcidid: 0000-0002-3492-8654 surname: Mesoudy fullname: Mesoudy, Abdelouadoud El email: elma2803@usherbrooke.ca organization: Institut Interdisciplinaire d′Innovation Technologique (3IT), Université de Sherbrooke, 3000, boulevard de l'Université, Sherbrooke, Québec J1K OA5, Canada – sequence: 2 givenname: Denis orcidid: 0000-0003-4627-6136 surname: Machon fullname: Machon, Denis organization: Institut Interdisciplinaire d′Innovation Technologique (3IT), Université de Sherbrooke, 3000, boulevard de l'Université, Sherbrooke, Québec J1K OA5, Canada – sequence: 3 givenname: Andreas orcidid: 0000-0003-0815-5288 surname: Ruediger fullname: Ruediger, Andreas organization: Institut National de la Recherche Scientifique (INRS), centre Énergie, Matériaux, Télécommunications, 1650 Boulevard Lionel-Boulet, Varennes, Québec J3× 1S2, Canada – sequence: 4 givenname: Abdelatif orcidid: 0000-0002-1466-7346 surname: Jaouad fullname: Jaouad, Abdelatif organization: Institut Interdisciplinaire d′Innovation Technologique (3IT), Université de Sherbrooke, 3000, boulevard de l'Université, Sherbrooke, Québec J1K OA5, Canada – sequence: 5 givenname: Fabien orcidid: 0000-0002-9591-220X surname: Alibart fullname: Alibart, Fabien organization: Institut Interdisciplinaire d′Innovation Technologique (3IT), Université de Sherbrooke, 3000, boulevard de l'Université, Sherbrooke, Québec J1K OA5, Canada – sequence: 6 givenname: Serge orcidid: 0000-0002-3002-501X surname: Ecoffey fullname: Ecoffey, Serge organization: Institut Interdisciplinaire d′Innovation Technologique (3IT), Université de Sherbrooke, 3000, boulevard de l'Université, Sherbrooke, Québec J1K OA5, Canada – sequence: 7 givenname: Dominique orcidid: 0000-0003-2156-967X surname: Drouin fullname: Drouin, Dominique organization: Institut Interdisciplinaire d′Innovation Technologique (3IT), Université de Sherbrooke, 3000, boulevard de l'Université, Sherbrooke, Québec J1K OA5, Canada |
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| Keywords | Bandgap narrowing Oxygen vacancies Urbach tails Reactive sputtering Titanium dioxide |
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| SubjectTerms | Bandgap narrowing Engineering Sciences Oxygen vacancies Physics Reactive sputtering Titanium dioxide Urbach tails |
| Title | Band gap narrowing induced by oxygen vacancies in reactively sputtered TiO2 thin films |
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