Gas sensing properties of defect-induced single-walled carbon nanotubes
We report a method to induce defects on the surface of single-walled carbon nanotubes (SWNTs) in order to improve the gas-sensing properties of an SWNT-based sensor. In this approach, the surface of the SWNTs is physically modified by thermal treatment at high temperature. The fabricated SWNT-based...
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Published in | Sensors and actuators. B, Chemical Vol. 228; pp. 688 - 692 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
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Elsevier B.V
02.06.2016
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Abstract | We report a method to induce defects on the surface of single-walled carbon nanotubes (SWNTs) in order to improve the gas-sensing properties of an SWNT-based sensor. In this approach, the surface of the SWNTs is physically modified by thermal treatment at high temperature. The fabricated SWNT-based sensors were subjected to rapid thermal annealing (RTA) over the temperature range of 300–800°C. After the thermal treatment, the electrical resistances of the defect-induced SWNT sensors were measured and compared with those of pristine SWNT sensors. The gas sensing properties of the defect-induced SWNT sensors upon exposure to various gases such as NO2, NH3, and H2 were measured at room temperature. The thermally treated SWNT-based sensors exhibited much higher sensitivity and recovery than the pristine sensors. These results indicate that the defect-induced SWNTs can improve the performance of SWNT-based sensors. |
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AbstractList | We report a method to induce defects on the surface of single-walled carbon nanotubes (SWNTs) in order to improve the gas-sensing properties of an SWNT-based sensor. In this approach, the surface of the SWNTs is physically modified by thermal treatment at high temperature. The fabricated SWNT-based sensors were subjected to rapid thermal annealing (RTA) over the temperature range of 300-800 degree C. After the thermal treatment, the electrical resistances of the defect-induced SWNT sensors were measured and compared with those of pristine SWNT sensors. The gas sensing properties of the defect-induced SWNT sensors upon exposure to various gases such as NO2, NH3, and H2 were measured at room temperature. The thermally treated SWNT-based sensors exhibited much higher sensitivity and recovery than the pristine sensors. These results indicate that the defect-induced SWNTs can improve the performance of SWNT-based sensors. We report a method to induce defects on the surface of single-walled carbon nanotubes (SWNTs) in order to improve the gas-sensing properties of an SWNT-based sensor. In this approach, the surface of the SWNTs is physically modified by thermal treatment at high temperature. The fabricated SWNT-based sensors were subjected to rapid thermal annealing (RTA) over the temperature range of 300–800°C. After the thermal treatment, the electrical resistances of the defect-induced SWNT sensors were measured and compared with those of pristine SWNT sensors. The gas sensing properties of the defect-induced SWNT sensors upon exposure to various gases such as NO2, NH3, and H2 were measured at room temperature. The thermally treated SWNT-based sensors exhibited much higher sensitivity and recovery than the pristine sensors. These results indicate that the defect-induced SWNTs can improve the performance of SWNT-based sensors. |
Author | Chung, Youngchul Choi, Sun-Woo Byun, Young Tae Kim, Jaeseong Lee, Je-Haeng |
Author_xml | – sequence: 1 givenname: Jaeseong surname: Kim fullname: Kim, Jaeseong organization: Sensor System Research Center, Korea Institute of Science and Technology (KIST), 5 Hwarangro 14-gil, Seongbuk-gu, Seoul 02792, Republic of Korea – sequence: 2 givenname: Sun-Woo surname: Choi fullname: Choi, Sun-Woo organization: Sensor System Research Center, Korea Institute of Science and Technology (KIST), 5 Hwarangro 14-gil, Seongbuk-gu, Seoul 02792, Republic of Korea – sequence: 3 givenname: Je-Haeng surname: Lee fullname: Lee, Je-Haeng organization: Sensor System Research Center, Korea Institute of Science and Technology (KIST), 5 Hwarangro 14-gil, Seongbuk-gu, Seoul 02792, Republic of Korea – sequence: 4 givenname: Youngchul surname: Chung fullname: Chung, Youngchul organization: Department of Electronics and Communications Engineering, Kwangwoon University, 20 Kwangwoonro, Nowon-gu, Seoul 01897, Republic of Korea – sequence: 5 givenname: Young Tae surname: Byun fullname: Byun, Young Tae email: byt427@kist.re.kr organization: Sensor System Research Center, Korea Institute of Science and Technology (KIST), 5 Hwarangro 14-gil, Seongbuk-gu, Seoul 02792, Republic of Korea |
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SubjectTerms | Actuators Annealing Defect functionalization Defects Gas sensors Heat treatment Nitrogen dioxide NO2 gas Sensors Single wall carbon nanotubes Single-walled carbon nanotubes |
Title | Gas sensing properties of defect-induced single-walled carbon nanotubes |
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