Fabrication of high density CdTe/GaAs nanodot arrays using nanoporous alumina masks
Long-range ordered semiconductor CdTe nanodot arrays of the uniform size were formed by molecular-beam epitaxy on the GaAs substrate as a replica of the nanoporous alumina mask in spite of the large lattice mismatch between GaAs and CdTe. The number per unit area and the size of nanodots of the hete...
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| Published in | Current applied physics Vol. 6; pp. e187 - e191 |
|---|---|
| Main Authors | , , , |
| Format | Journal Article |
| Language | English |
| Published |
Elsevier B.V
01.08.2006
한국물리학회 |
| Subjects | |
| Online Access | Get full text |
| ISSN | 1567-1739 1878-1675 |
| DOI | 10.1016/j.cap.2006.01.036 |
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| Abstract | Long-range ordered semiconductor CdTe nanodot arrays of the uniform size were formed by molecular-beam epitaxy on the GaAs substrate as a replica of the nanoporous alumina mask in spite of the large lattice mismatch between GaAs and CdTe. The number per unit area and the size of nanodots of the heterostructure semiconductor CdTe/GaAs were controlled by those of pores in the mask. Using a very thin nanoporous alumina mask (<200nm thick) prepared at the anodization voltage of 30V in oxalic acid, fabricated were the arrays of CdTe nanodots (55nm diameter) with the large number per unit area of 1.3×1010cm−2. |
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| AbstractList | Long-range ordered semiconductor CdTe nanodot arrays of the uniform size were formed by molecular-beam epitaxy on the GaAssubstrate as a replica of the nanoporous alumina mask in spite of the large lattice mismatch between GaAs and CdTe. The number perunit area and the size of nanodots of the heterostructure semiconductor CdTe/GaAs were controlled by those of pores in the mask. Usingarrays of CdTe nanodots (55 nm diameter) with the large number per unit area of 1.3 x 1010 cm. -2. KCI Citation Count: 4 Long-range ordered semiconductor CdTe nanodot arrays of the uniform size were formed by molecular-beam epitaxy on the GaAs substrate as a replica of the nanoporous alumina mask in spite of the large lattice mismatch between GaAs and CdTe. The number per unit area and the size of nanodots of the heterostructure semiconductor CdTe/GaAs were controlled by those of pores in the mask. Using a very thin nanoporous alumina mask (<200nm thick) prepared at the anodization voltage of 30V in oxalic acid, fabricated were the arrays of CdTe nanodots (55nm diameter) with the large number per unit area of 1.3×1010cm−2. |
| Author | Mho, Sun-il Jung, Mi Park, Hong Lee Lee, Hong Seok |
| Author_xml | – sequence: 1 givenname: Mi surname: Jung fullname: Jung, Mi organization: Department of Molecular Science and Technology, Ajou University, Suwon 443-749, Republic of Korea – sequence: 2 givenname: Hong Seok surname: Lee fullname: Lee, Hong Seok organization: Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Republic of Korea – sequence: 3 givenname: Hong Lee surname: Park fullname: Park, Hong Lee organization: Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Republic of Korea – sequence: 4 givenname: Sun-il surname: Mho fullname: Mho, Sun-il email: mho@ajou.ac.kr organization: Department of Molecular Science and Technology, Ajou University, Suwon 443-749, Republic of Korea |
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| CitedBy_id | crossref_primary_10_1021_cr500002z crossref_primary_10_1038_s41598_020_61090_3 crossref_primary_10_1016_j_commatsci_2010_10_011 |
| Cites_doi | 10.1063/1.122534 10.1098/rspa.1970.0129 10.1063/1.368911 10.1063/1.1477280 10.1063/1.122055 10.1149/1.2781142 10.1126/science.268.5216.1466 10.1143/JJAP.35.L126 10.1016/j.electacta.2004.02.057 10.1063/1.126693 10.1063/1.114701 10.1002/1521-4095(200007)12:14<1031::AID-ADMA1031>3.0.CO;2-R 10.1016/S0022-0248(02)02421-1 10.1063/1.1484554 10.1063/1.1544065 10.1063/1.1517716 10.1557/PROC-818-M11.38.1 |
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| Keywords | Molecular beam epitaxy CdTe nanodot arrays 81.15.Hi 81.16.Rf 81.07.−b Nanoporous alumina mask |
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| References | Masuda, Yasui, Nishio (bib10) 2000; 12 Jung, Kim, Lee, Joo, Mho (bib16) 2004; 50 Cao, Xu, Xiang, Ma, Chang, Ho, Solomon (bib4) 2000; 76 Farrow (bib18) 1995 O’Sullivan, Wood (bib7) 1970; 317 Mei, Blumin, Kim, Wu, Ruda (bib11) 2003; 251 Mei, Kim, Guo, Ruda (bib12) 2002; 81 Jung, Lee, Park, Mho (bib17) 2004; 818 Leobandung, Guo, Wang, Chou (bib3) 1995; 67 Li, Müller, Birner, Nielsch, Gösele (bib8) 1998; 84 Mei, Blumin, Sun, Kim, Wu, Guo, Ruda (bib5) 2003; 82 Masuda, Satoh (bib9) 1995; 35 Keller, Hunter, Robinson (bib6) 1953; 100 Masuda, Fukuda (bib15) 1995; 268 Huffker, Park, Zou, Shchokin, Deppe (bib2) 1998; 73 Jang, Oh, Lee, Choi, Kim, Choo, Lee, Park (bib14) 2002; 81 Harris, Mawbray, Skolnic, Hoplcinson, Hill (bib1) 1998; 73 Lee, Lee, Choi, Kim, Park (bib13) 2002; 81 Harris (10.1016/j.cap.2006.01.036_bib1) 1998; 73 Lee (10.1016/j.cap.2006.01.036_bib13) 2002; 81 Masuda (10.1016/j.cap.2006.01.036_bib10) 2000; 12 Jang (10.1016/j.cap.2006.01.036_bib14) 2002; 81 O’Sullivan (10.1016/j.cap.2006.01.036_bib7) 1970; 317 Farrow (10.1016/j.cap.2006.01.036_bib18) 1995 Mei (10.1016/j.cap.2006.01.036_bib11) 2003; 251 Mei (10.1016/j.cap.2006.01.036_bib5) 2003; 82 Cao (10.1016/j.cap.2006.01.036_bib4) 2000; 76 Masuda (10.1016/j.cap.2006.01.036_bib15) 1995; 268 Keller (10.1016/j.cap.2006.01.036_bib6) 1953; 100 Li (10.1016/j.cap.2006.01.036_bib8) 1998; 84 Mei (10.1016/j.cap.2006.01.036_bib12) 2002; 81 Leobandung (10.1016/j.cap.2006.01.036_bib3) 1995; 67 Jung (10.1016/j.cap.2006.01.036_bib16) 2004; 50 Huffker (10.1016/j.cap.2006.01.036_bib2) 1998; 73 Jung (10.1016/j.cap.2006.01.036_bib17) 2004; 818 Masuda (10.1016/j.cap.2006.01.036_bib9) 1995; 35 |
| References_xml | – volume: 100 start-page: 411 year: 1953 ident: bib6 publication-title: J. Electrochem. Soc. – volume: 73 start-page: 2564 year: 1998 ident: bib2 publication-title: Appl. Phys. Lett. – volume: 268 start-page: 1466 year: 1995 ident: bib15 publication-title: Science – volume: 35 start-page: L126 year: 1995 ident: bib9 publication-title: Jpn. J. Appl. Phys. Part 2 – volume: 317 start-page: 511 year: 1970 ident: bib7 publication-title: Proc. R. Soc. London Ser. A – volume: 251 start-page: 253 year: 2003 ident: bib11 publication-title: J. Crystal Growth – volume: 84 start-page: 6023 year: 1998 ident: bib8 publication-title: J. Appl. Phys. – volume: 81 start-page: 3750 year: 2002 ident: bib13 publication-title: Appl. Phys. Lett. – volume: 12 start-page: 1031 year: 2000 ident: bib10 publication-title: Adv. Mater. – volume: 50 start-page: 857 year: 2004 ident: bib16 publication-title: Electrochim. Acta – volume: 73 start-page: 969 year: 1998 ident: bib1 publication-title: Appl. Phys. Lett. – volume: 82 start-page: 967 year: 2003 ident: bib5 publication-title: Appl. Phys. Lett. – volume: 81 start-page: 361 year: 2002 ident: bib12 publication-title: Appl. Phys. Lett. – volume: 67 start-page: 938 year: 1995 ident: bib3 publication-title: Appl. Phys. Lett. – volume: 76 start-page: 3519 year: 2000 ident: bib4 publication-title: Appl. Phys. Lett. – volume: 818 start-page: 323 year: 2004 ident: bib17 publication-title: Mat. Res. Soc. Symp. Proc. – volume: 81 start-page: 993 year: 2002 ident: bib14 publication-title: Appl. Phys. Lett. – year: 1995 ident: bib18 article-title: Molecular Beam Epitaxy – volume: 73 start-page: 2564 year: 1998 ident: 10.1016/j.cap.2006.01.036_bib2 publication-title: Appl. Phys. Lett. doi: 10.1063/1.122534 – volume: 317 start-page: 511 year: 1970 ident: 10.1016/j.cap.2006.01.036_bib7 publication-title: Proc. R. Soc. London Ser. A doi: 10.1098/rspa.1970.0129 – volume: 84 start-page: 6023 year: 1998 ident: 10.1016/j.cap.2006.01.036_bib8 publication-title: J. Appl. Phys. doi: 10.1063/1.368911 – volume: 81 start-page: 993 year: 2002 ident: 10.1016/j.cap.2006.01.036_bib14 publication-title: Appl. Phys. Lett. doi: 10.1063/1.1477280 – volume: 73 start-page: 969 year: 1998 ident: 10.1016/j.cap.2006.01.036_bib1 publication-title: Appl. Phys. Lett. doi: 10.1063/1.122055 – volume: 100 start-page: 411 year: 1953 ident: 10.1016/j.cap.2006.01.036_bib6 publication-title: J. Electrochem. Soc. doi: 10.1149/1.2781142 – volume: 268 start-page: 1466 year: 1995 ident: 10.1016/j.cap.2006.01.036_bib15 publication-title: Science doi: 10.1126/science.268.5216.1466 – volume: 35 start-page: L126 year: 1995 ident: 10.1016/j.cap.2006.01.036_bib9 publication-title: Jpn. J. Appl. Phys. Part 2 doi: 10.1143/JJAP.35.L126 – year: 1995 ident: 10.1016/j.cap.2006.01.036_bib18 – volume: 50 start-page: 857 year: 2004 ident: 10.1016/j.cap.2006.01.036_bib16 publication-title: Electrochim. Acta doi: 10.1016/j.electacta.2004.02.057 – volume: 76 start-page: 3519 year: 2000 ident: 10.1016/j.cap.2006.01.036_bib4 publication-title: Appl. Phys. Lett. doi: 10.1063/1.126693 – volume: 67 start-page: 938 year: 1995 ident: 10.1016/j.cap.2006.01.036_bib3 publication-title: Appl. Phys. Lett. doi: 10.1063/1.114701 – volume: 12 start-page: 1031 year: 2000 ident: 10.1016/j.cap.2006.01.036_bib10 publication-title: Adv. Mater. doi: 10.1002/1521-4095(200007)12:14<1031::AID-ADMA1031>3.0.CO;2-R – volume: 251 start-page: 253 year: 2003 ident: 10.1016/j.cap.2006.01.036_bib11 publication-title: J. Crystal Growth doi: 10.1016/S0022-0248(02)02421-1 – volume: 81 start-page: 361 year: 2002 ident: 10.1016/j.cap.2006.01.036_bib12 publication-title: Appl. Phys. Lett. doi: 10.1063/1.1484554 – volume: 82 start-page: 967 year: 2003 ident: 10.1016/j.cap.2006.01.036_bib5 publication-title: Appl. Phys. Lett. doi: 10.1063/1.1544065 – volume: 81 start-page: 3750 year: 2002 ident: 10.1016/j.cap.2006.01.036_bib13 publication-title: Appl. Phys. Lett. doi: 10.1063/1.1517716 – volume: 818 start-page: 323 year: 2004 ident: 10.1016/j.cap.2006.01.036_bib17 publication-title: Mat. Res. Soc. Symp. Proc. doi: 10.1557/PROC-818-M11.38.1 |
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| Snippet | Long-range ordered semiconductor CdTe nanodot arrays of the uniform size were formed by molecular-beam epitaxy on the GaAs substrate as a replica of the... Long-range ordered semiconductor CdTe nanodot arrays of the uniform size were formed by molecular-beam epitaxy on the GaAssubstrate as a replica of the... |
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| SubjectTerms | CdTe nanodot arrays Molecular beam epitaxy Nanoporous alumina mask 물리학 |
| Title | Fabrication of high density CdTe/GaAs nanodot arrays using nanoporous alumina masks |
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