Analysis of photovoltaic behavior of Si-based junctions containing novel graphene oxide/nickel(II) phthalocyanine composite films

In this work, we have synthesized modified nickel(II) phthalocyanine containing graphene oxide. Our emphasis is given to understand the effect of doping on the photophysical behavior of semiconducting graphene oxide/nickel(II) phthalocyanine composite films by using I–V and C–V spectroscopy. Al-p-Si...

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Published inMicroelectronic engineering Vol. 154; pp. 53 - 61
Main Authors Soylu, M., Ocaya, R., Tuncer, H., Al-Ghamdi, Ahmed A., Dere, A., Sari, Derya C., Yakuphanoglu, F.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 25.03.2016
Subjects
Devices
Dopants
Doping
Electrical parameters
Graphene
Illumination effect
Nanoparticles
Oxides
Particulate composites
Phthalocyanine and graphene
Rectification
Phthalocyanine and graphene
Illumination effect
Electrical parameters
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Abstract In this work, we have synthesized modified nickel(II) phthalocyanine containing graphene oxide. Our emphasis is given to understand the effect of doping on the photophysical behavior of semiconducting graphene oxide/nickel(II) phthalocyanine composite films by using I–V and C–V spectroscopy. Al-p-Si/GO:NiPc/Au structures have rectifying behavior with a high rectification ratio of 6.99×104 at ±10V. Photophysical properties of the device are found to be improved for graphene oxide particles due to extra electron incorporation for n-type doping (GO dopant) to modified nickel(II) phthalocyanine which favors the electron and hole transfer processes. It is seen that the incorporation of graphene oxide nanoparticles into nickel(II) phthalocyanine accelerates the electron transfer process from GO nanoparticles to nickel(II) phthalocyanine. In contrast, before GO doping in nickel(II) phthalocyanine, hole transfer process occurs. •We have fabricated nanostructure GO:NiPc by spin coating on the p-Si•The photocurrent in the reverse bias voltage is increased by increasing photo-illumination intensity•The structure behaves as a photodiode•The Al/GO:NiPc/p-Si diode can be used for optical sensor applications. [Display omitted]
AbstractList In this work, we have synthesized modified nickel(II) phthalocyanine containing graphene oxide. Our emphasis is given to understand the effect of doping on the photophysical behavior of semiconducting graphene oxide/nickel(II) phthalocyanine composite films by using I–V and C–V spectroscopy. Al-p-Si/GO:NiPc/Au structures have rectifying behavior with a high rectification ratio of 6.99×104 at ±10V. Photophysical properties of the device are found to be improved for graphene oxide particles due to extra electron incorporation for n-type doping (GO dopant) to modified nickel(II) phthalocyanine which favors the electron and hole transfer processes. It is seen that the incorporation of graphene oxide nanoparticles into nickel(II) phthalocyanine accelerates the electron transfer process from GO nanoparticles to nickel(II) phthalocyanine. In contrast, before GO doping in nickel(II) phthalocyanine, hole transfer process occurs. •We have fabricated nanostructure GO:NiPc by spin coating on the p-Si•The photocurrent in the reverse bias voltage is increased by increasing photo-illumination intensity•The structure behaves as a photodiode•The Al/GO:NiPc/p-Si diode can be used for optical sensor applications. [Display omitted]
In this work, we have synthesized modified nickel(II) phthalocyanine containing graphene oxide. Our emphasis is given to understand the effect of doping on the photophysical behavior of semiconducting graphene oxide/nickel(II) phthalocyanine composite films by using I-V and C-V spectroscopy. Al-p-Si/GO:NiPc/Au structures have rectifying behavior with a high rectification ratio of 6.99 10 super(4) at plus or minus 10 V. Photophysical properties of the device are found to be improved for graphene oxide particles due to extra electron incorporation for n-type doping (GO dopant) to modified nickel(II) phthalocyanine which favors the electron and hole transfer processes. It is seen that the incorporation of graphene oxide nanoparticles into nickel(II) phthalocyanine accelerates the electron transfer process from GO nanoparticles to nickel(II) phthalocyanine. In contrast, before GO doping in nickel(II) phthalocyanine, hole transfer process occurs.
Author Ocaya, R.
Tuncer, H.
Dere, A.
Yakuphanoglu, F.
Al-Ghamdi, Ahmed A.
Sari, Derya C.
Soylu, M.
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  surname: Yakuphanoglu
  fullname: Yakuphanoglu, F.
  organization: Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, Saudi Arabia
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SSID ssj0016408
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Snippet In this work, we have synthesized modified nickel(II) phthalocyanine containing graphene oxide. Our emphasis is given to understand the effect of doping on the...
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StartPage 53
SubjectTerms Devices
Dopants
Doping
Electrical parameters
Graphene
Illumination effect
Nanoparticles
Oxides
Particulate composites
Phthalocyanine and graphene
Rectification
Title Analysis of photovoltaic behavior of Si-based junctions containing novel graphene oxide/nickel(II) phthalocyanine composite films
URI https://dx.doi.org/10.1016/j.mee.2016.01.022
https://search.proquest.com/docview/1825445270
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