Analysis of photovoltaic behavior of Si-based junctions containing novel graphene oxide/nickel(II) phthalocyanine composite films

• Published in: Microelectronic engineering Vol. 154; pp. 53 - 61
• Main Authors: Soylu, M., Ocaya, R., Tuncer, H., Al-Ghamdi, Ahmed A., Dere, A., Sari, Derya C., Yakuphanoglu, F.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 25.03.2016
• Subjects: Devices; Dopants; Doping; Electrical parameters; Graphene; Illumination effect; Nanoparticles; Oxides; Particulate composites; Phthalocyanine and graphene; Rectification; Phthalocyanine and graphene; Illumination effect; Electrical parameters
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2016.01.022

In this work, we have synthesized modified nickel(II) phthalocyanine containing graphene oxide. Our emphasis is given to understand the effect of doping on the photophysical behavior of semiconducting graphene oxide/nickel(II) phthalocyanine composite films by using I–V and C–V spectroscopy. Al-p-Si/GO:NiPc/Au structures have rectifying behavior with a high rectification ratio of 6.99×104 at ±10V. Photophysical properties of the device are found to be improved for graphene oxide particles due to extra electron incorporation for n-type doping (GO dopant) to modified nickel(II) phthalocyanine which favors the electron and hole transfer processes. It is seen that the incorporation of graphene oxide nanoparticles into nickel(II) phthalocyanine accelerates the electron transfer process from GO nanoparticles to nickel(II) phthalocyanine. In contrast, before GO doping in nickel(II) phthalocyanine, hole transfer process occurs. •We have fabricated nanostructure GO:NiPc by spin coating on the p-Si•The photocurrent in the reverse bias voltage is increased by increasing photo-illumination intensity•The structure behaves as a photodiode•The Al/GO:NiPc/p-Si diode can be used for optical sensor applications. [Display omitted]