Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stress

• Published in: Chinese physics B Vol. 24; no. 8; pp. 619 - 623
• Main Author: 汤兰凤 于广 陆海 武辰飞 钱慧敏 周东 张荣 郑有炓 黄晓明
• Format: Journal Article
• Language: English
• Published: 01.08.2015
• Subjects: amorphous; Carriers; Devices; effect;thin; gallium; Gates; Illumination; indium; oxide;illumination;detrapping; states; Stresses; Thin film transistors; Threshold voltage; transistors;interface; White light; zinc

The influence of white light illumination on the stability of an amorphous In GaZnO thin film transistor is investigated in this work. Under prolonged positive gate bias stress, the device illuminated by white light exhibits smaller positive threshold voltage shift than the device stressed under dar...