The measurement of responsivity of infrared photodetectors using a cavity blackbody
For the measurement of responsivity of an infrared photodetector, the most-used radiation source is a blackbody. In such a measurement system, distance between the blackbody, the photodetector and the aperture diameter are two parameters that contribute most measurement errors. In this work, we desc...
Saved in:
Cover
Loading…
Abstract | For the measurement of responsivity of an infrared photodetector, the most-used radiation source is a blackbody. In such a measurement system, distance between the blackbody, the photodetector and the aperture diameter are two parameters that contribute most measurement errors. In this work, we describe the configuration of our responsivity measurement system in great detail and present a method to calibrate the distance and aperture diameter. The core of this calibration method is to transfer direct measurements of these two parameters into an extraction procedure by fitting the experiment data to the calculated results. The calibration method is proved experimentally with a commercially extended InGaAs detector at a wide range of blackbody temperature, aperture diameter and distance. Then proof procedures are further extended into a detector fabricated in our laboratory and consistent results were obtained. |
---|---|
AbstractList | For the measurement of responsivity of an infrared photodetector, the most-used radiation source is a blackbody. In such a measurement system, distance between the blackbody, the photodetector and the aperture diameter are two parameters that contribute most measurement errors. In this work, we describe the configuration of our responsivity measurement system in great detail and present a method to calibrate the distance and aperture diameter. The core of this calibration method is to transfer direct measurements of these two parameters into an extraction procedure by fitting the experiment data to the calculated results. The calibration method is proved experimentally with a commercially extended InGaAs detector at a wide range of blackbody temperature, aperture diameter and distance. Then proof procedures are further extended into a detector fabricated in our laboratory and consistent results were obtained. For the measurement of responsivity of an infrared photodetector,the most-used radiation source is a blackbody.In such a measurement system,distance between the blackbody,the photodetector and the aperture diameter are two parame-ters that contribute most measurement errors.In this work,we describe the configuration of our responsivity measurement sys-tem in great detail and present a method to calibrate the distance and aperture diameter.The core of this calibration method is to transfer direct measurements of these two parameters into an extraction procedure by fitting the experiment data to the calculated results.The calibration method is proved experimentally with a commercially extended InGaAs detector at a wide range of blackbody temperature,aperture diameter and distance.Then proof procedures are further extended into a detector fabricated in our laboratory and consistent results were obtained. |
Author | Chen, Weiqiang Chang, Faran Shen, Guiying Niu, Zhichuan Li, Nong Zhou, Wenguang Wang, Guowei Hao, Hongyue Liu, Jingming Wu, Donghai Wang, Fenghua Jiang, Dongwei Zhao, Youwen Jiang, Junkai Xie, Hui Xu, Yingqiang |
AuthorAffiliation | State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 101408,China%State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 101408,China;Center of Materials Science and Optoelectronics Engineering,College of Materials Science and Opto-Electronic Technology,University of Chi-nese Academy of Sciences,Beijing 100049,China%State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China%Key Laboratory of Semiconductor Materials Science,Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices,Insti-tute of Semiconductors,Chine |
AuthorAffiliation_xml | – name: State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 101408,China%State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 101408,China;Center of Materials Science and Optoelectronics Engineering,College of Materials Science and Opto-Electronic Technology,University of Chi-nese Academy of Sciences,Beijing 100049,China%State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China%Key Laboratory of Semiconductor Materials Science,Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices,Insti-tute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
Author_xml | – sequence: 1 givenname: Nong surname: Li fullname: Li, Nong organization: College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences , Beijing 101408, China – sequence: 2 givenname: Dongwei surname: Jiang fullname: Jiang, Dongwei organization: Center of Materials Science and Optoelectronics Engineering, College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences , Beijing 100049, China – sequence: 3 givenname: Guowei surname: Wang fullname: Wang, Guowei organization: Center of Materials Science and Optoelectronics Engineering, College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences , Beijing 100049, China – sequence: 4 givenname: Weiqiang surname: Chen fullname: Chen, Weiqiang organization: College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences , Beijing 101408, China – sequence: 5 givenname: Wenguang surname: Zhou fullname: Zhou, Wenguang organization: College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences , Beijing 101408, China – sequence: 6 givenname: Junkai surname: Jiang fullname: Jiang, Junkai organization: College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences , Beijing 101408, China – sequence: 7 givenname: Faran surname: Chang fullname: Chang, Faran organization: State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China – sequence: 8 givenname: Hongyue surname: Hao fullname: Hao, Hongyue organization: Center of Materials Science and Optoelectronics Engineering, College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences , Beijing 100049, China – sequence: 9 givenname: Donghai surname: Wu fullname: Wu, Donghai organization: Center of Materials Science and Optoelectronics Engineering, College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences , Beijing 100049, China – sequence: 10 givenname: Yingqiang surname: Xu fullname: Xu, Yingqiang organization: Center of Materials Science and Optoelectronics Engineering, College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences , Beijing 100049, China – sequence: 11 givenname: Guiying surname: Shen fullname: Shen, Guiying organization: Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China – sequence: 12 givenname: Hui surname: Xie fullname: Xie, Hui organization: Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China – sequence: 13 givenname: Jingming surname: Liu fullname: Liu, Jingming organization: Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China – sequence: 14 givenname: Youwen surname: Zhao fullname: Zhao, Youwen organization: Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China – sequence: 15 givenname: Fenghua surname: Wang fullname: Wang, Fenghua organization: Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China – sequence: 16 givenname: Zhichuan surname: Niu fullname: Niu, Zhichuan organization: Center of Materials Science and Optoelectronics Engineering, College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences , Beijing 100049, China |
BookMark | eNqFkF1LwzAUhoNMcJv-BemVd3UnWdqm4I0Mv2DghfO6JO3JlrklI8nU_XtbKwreDALhDe-Tc3hGZGCdRUIuKVxTEGJC84KnvGT5hPMJhfawKdATMmSQiTSnHAZk-Fs6I6MQ1gBt5nRIXhYrTLYow97jFm1MnE48hp2zwbybeOiysdpLj02yW7noGoxYR-dDsg_GLhOZ1PK7qTayflOuOZyTUy03AS9-7jF5vb9bzB7T-fPD0-x2ntZTVsYUuURRiLxmstEZapE1BRVNzrMaQKMsGFOZglIoDpqhEiLHUkCpeDnNpabTMbnq__2QVku7rNZu7207sVJN_FSs9UABoGiLeV-svQvBo6523mylP1QUqs5h1empOj0V5_1j57AFb_6BtYkyGmejl2ZzHGc9btzub7kj0Bc0jIjE |
CitedBy_id | crossref_primary_10_1016_j_cej_2024_158734 crossref_primary_10_1002_advs_202402530 crossref_primary_10_1088_2631_7990_ada857 crossref_primary_10_1039_D4TC00332B crossref_primary_10_1016_j_infrared_2024_105419 crossref_primary_10_1016_j_sna_2025_116464 crossref_primary_10_1002_adma_202414054 crossref_primary_10_1088_1674_4926_24070007 crossref_primary_10_1116_6_0003139 crossref_primary_10_1021_acsnano_4c08810 crossref_primary_10_1002_ifm2_23 crossref_primary_10_1063_5_0232606 |
Cites_doi | 10.1063/1.2335509 10.1016/j.jcrysgro.2008.12.009 10.1063/1.3177333 10.1063/1.2920764 10.1063/5.0037192 10.1063/1.124676 10.1016/j.infrared.2020.103461 10.1109/JRPROC.1959.287047 10.1063/1.5124093 10.1038/170937b0 10.1063/1.2795086 10.1016/j.infrared.2009.09.005 10.1063/1.5005097 10.1063/1.2746943 10.1063/1.369533 10.1063/1.2932080 |
ContentType | Journal Article |
Copyright | 2023 Chinese Institute of Electronics Copyright © Wanfang Data Co. Ltd. All Rights Reserved. |
Copyright_xml | – notice: 2023 Chinese Institute of Electronics – notice: Copyright © Wanfang Data Co. Ltd. All Rights Reserved. |
DBID | AAYXX CITATION 2B. 4A8 92I 93N PSX TCJ |
DOI | 10.1088/1674-4926/44/10/102301 |
DatabaseName | CrossRef Wanfang Data Journals - Hong Kong WANFANG Data Centre Wanfang Data Journals 万方数据期刊 - 香港版 China Online Journals (COJ) China Online Journals (COJ) |
DatabaseTitle | CrossRef |
DatabaseTitleList | CrossRef |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering Physics |
EISSN | 2058-6140 |
EndPage | 63 |
ExternalDocumentID | bdtxb202310007 10_1088_1674_4926_44_10_102301 jos_44_10_102301 |
GroupedDBID | -SI -S~ 4.4 5B3 5VR 5VS 5XA 5XJ 7.M 93N AAGCD AAJIO AATNI AAXDM ABHWH ACAFW ACGFO ACGFS ACHIP AFYNE AKPSB ALMA_UNASSIGNED_HOLDINGS AOAED ASPBG AVWKF AZFZN CAJEI CCEZO CEBXE CHBEP CJUJL CRLBU CUBFJ CW9 EBS EDWGO EQZZN FA0 IJHAN IOP IZVLO KOT N5L PJBAE Q-- RIN RNS ROL RPA SY9 TCJ TGT U1G U5S W28 AAYXX CITATION TGMPQ 02O 042 1WK 2B. 4A8 92H 92I AALHV ACARI AERVB AFUIB AGQPQ AHSEE ARNYC BBWZM EJD JCGBZ M45 NS0 NT- NT. PSX Q02 |
ID | FETCH-LOGICAL-c329t-e4ae8786c2adf5ef85d718d645c00fea722b5b098b40f2eb886e9809b4936af13 |
IEDL.DBID | IOP |
ISSN | 1674-4926 |
IngestDate | Thu May 29 04:06:49 EDT 2025 Thu Apr 24 23:00:02 EDT 2025 Tue Jul 01 03:20:35 EDT 2025 Wed Aug 21 03:33:03 EDT 2024 |
IsPeerReviewed | true |
IsScholarly | true |
Issue | 10 |
Keywords | infrared photodetectors cavity blackbody responsivity calibration |
Language | English |
License | This article is available under the terms of the IOP-Standard License. |
LinkModel | DirectLink |
MergedId | FETCHMERGED-LOGICAL-c329t-e4ae8786c2adf5ef85d718d645c00fea722b5b098b40f2eb886e9809b4936af13 |
PageCount | 7 |
ParticipantIDs | iop_journals_10_1088_1674_4926_44_10_102301 crossref_primary_10_1088_1674_4926_44_10_102301 crossref_citationtrail_10_1088_1674_4926_44_10_102301 wanfang_journals_bdtxb202310007 |
ProviderPackageCode | CITATION AAYXX |
PublicationCentury | 2000 |
PublicationDate | 2023-10-01 |
PublicationDateYYYYMMDD | 2023-10-01 |
PublicationDate_xml | – month: 10 year: 2023 text: 2023-10-01 day: 01 |
PublicationDecade | 2020 |
PublicationTitle | Journal of semiconductors |
PublicationTitleAlternate | J. Semicond |
PublicationTitle_FL | Journal of Semiconductors |
PublicationYear | 2023 |
Publisher | Chinese Institute of Electronics College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 101408,China State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China Center of Materials Science and Optoelectronics Engineering,College of Materials Science and Opto-Electronic Technology,University of Chi-nese Academy of Sciences,Beijing 100049,China%State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China%Key Laboratory of Semiconductor Materials Science,Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices,Insti-tute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 101408,China%State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
Publisher_xml | – name: Chinese Institute of Electronics – name: College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 101408,China – name: Center of Materials Science and Optoelectronics Engineering,College of Materials Science and Opto-Electronic Technology,University of Chi-nese Academy of Sciences,Beijing 100049,China%State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China%Key Laboratory of Semiconductor Materials Science,Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices,Insti-tute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China – name: State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China – name: College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 101408,China%State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
References | Li (jos_44_10_102301_bib17) 2019; 9 Rehm (jos_44_10_102301_bib12) 2009; 52 Kim (jos_44_10_102301_bib13) 2008; 92 jos_44_10_102301_bib16 Aifer (jos_44_10_102301_bib3) 2006; 89 Shafir (jos_44_10_102301_bib5) 2021; 118 Nguyen (jos_44_10_102301_bib4) 2007; 90 Clark Jones (jos_44_10_102301_bib1) 1952; 170 Hoffman (jos_44_10_102301_bib10) 2007; 91 Li (jos_44_10_102301_bib6) 2020; 111 Clark Jones (jos_44_10_102301_bib2) 1959; 47 Cohen-Elias (jos_44_10_102301_bib8) 2017; 111 Charache (jos_44_10_102301_bib9) 1999; 85 Prineas (jos_44_10_102301_bib14) 2008; 103 Shao (jos_44_10_102301_bib15) 2009; 311 Wang (jos_44_10_102301_bib7) 1999; 75 Ting (jos_44_10_102301_bib11) 2009; 95 |
References_xml | – volume: 89 start-page: 053519 year: 2006 ident: jos_44_10_102301_bib3 article-title: W-structured type-II superlattice long-wave infrared photodiodes with high quantum efficiency publication-title: Appl Phys Lett doi: 10.1063/1.2335509 – volume: 311 start-page: 1893 year: 2009 ident: jos_44_10_102301_bib15 publication-title: J Cryst Growth doi: 10.1016/j.jcrysgro.2008.12.009 – volume: 95 start-page: 023508 year: 2009 ident: jos_44_10_102301_bib11 article-title: A high-performance long wavelength superlattice complementary barrier infrared detector publication-title: Appl Phys Lett doi: 10.1063/1.3177333 – volume: 92 start-page: 183502 year: 2008 ident: jos_44_10_102301_bib13 article-title: Mid-IR focal plane array based on type-II InAs/GaSb strain layer superlattice detector with nBn design publication-title: Appl Phys Lett doi: 10.1063/1.2920764 – volume: 118 start-page: 063503 year: 2021 ident: jos_44_10_102301_bib5 article-title: High responsivity InGaAsSb p–n photodetector for extended SWIR detection publication-title: Appl Phys Lett doi: 10.1063/5.0037192 – volume: 75 start-page: 1305 year: 1999 ident: jos_44_10_102301_bib7 article-title: High-quantum-efficiency 0.5 eV GaInAsSb/GaSb thermophotovoltaic devices publication-title: Appl Phys Lett doi: 10.1063/1.124676 – volume: 111 start-page: 103461 year: 2020 ident: jos_44_10_102301_bib6 article-title: The investigations to eliminate the bias dependency of quantum efficiency of InGaAsSb nBn photodetectors for extended short wavelength infrared detection publication-title: Infrared Phys Technol doi: 10.1016/j.infrared.2020.103461 – volume: 47 start-page: 1495 year: 1959 ident: jos_44_10_102301_bib2 article-title: Phenomenological description of the response and detecting ability of radiation detectors publication-title: Proc IRE doi: 10.1109/JRPROC.1959.287047 – volume: 9 start-page: 105106 year: 2019 ident: jos_44_10_102301_bib17 article-title: High performance nBn detectors based on InGaAsSb bulk materials for short wavelength infrared detection publication-title: AIP Adv doi: 10.1063/1.5124093 – ident: jos_44_10_102301_bib16 – volume: 170 start-page: 937 year: 1952 ident: jos_44_10_102301_bib1 article-title: ‘Detectivity’: The reciprocal of noise equivalent input of radiation publication-title: Nature doi: 10.1038/170937b0 – volume: 91 start-page: 143507 year: 2007 ident: jos_44_10_102301_bib10 article-title: Beryllium compensation doping of InAs/GaSb infrared superlattice photodiodes publication-title: Appl Phys Lett doi: 10.1063/1.2795086 – volume: 52 start-page: 344 year: 2009 ident: jos_44_10_102301_bib12 article-title: InAs/GaSb superlattices for advanced infrared focal plane arrays publication-title: Infrared Phys Technol doi: 10.1016/j.infrared.2009.09.005 – volume: 111 start-page: 201106 year: 2017 ident: jos_44_10_102301_bib8 article-title: Minority carrier diffusion length for electrons in an extended SWIR InAs/AlSb type-II superlattice photodiode publication-title: Appl Phys Lett doi: 10.1063/1.5005097 – volume: 90 start-page: 231108 year: 2007 ident: jos_44_10_102301_bib4 publication-title: Appl Phys Lett doi: 10.1063/1.2746943 – volume: 85 start-page: 2247 year: 1999 ident: jos_44_10_102301_bib9 article-title: InGaAsSb thermophotovoltaic diode: Physics evaluation publication-title: J Appl Phys doi: 10.1063/1.369533 – volume: 103 start-page: 104511 year: 2008 ident: jos_44_10_102301_bib14 publication-title: J Appl Phys doi: 10.1063/1.2932080 |
SSID | ssj0067441 ssib023363340 |
Score | 2.350966 |
Snippet | For the measurement of responsivity of an infrared photodetector, the most-used radiation source is a blackbody. In such a measurement system, distance between... For the measurement of responsivity of an infrared photodetector,the most-used radiation source is a blackbody.In such a measurement system,distance between... |
SourceID | wanfang crossref iop |
SourceType | Aggregation Database Enrichment Source Index Database Publisher |
StartPage | 102301 |
SubjectTerms | cavity blackbody infrared photodetectors responsivity calibration |
Title | The measurement of responsivity of infrared photodetectors using a cavity blackbody |
URI | https://iopscience.iop.org/article/10.1088/1674-4926/44/10/102301 https://d.wanfangdata.com.cn/periodical/bdtxb202310007 |
Volume | 44 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpV1LS8QwEA4-EPTgW3ybgzfpbrZN0uQooqjgA1TwVpImUVDbZbcL6q83k7a-QES8tWkmpJNpMk2--Qah3Vwqa7kgUU8p_4PCpImkchKQAKlLmCNpiJA7O-fHN_T0lrVowhALU_abqb_jL2ui4FqFDSBOdAE3HwHPXZdSX9gF8gGI4JpMBOeQxODk4rKdjH3VkLzyXaYNEv6xnS_r07jvQ4jmKZwq7j4tPEdzSLddrvEmD51RpTv56zc2x3-90zyabdxSvF8LLKAxWyyimU9khYtoKoBF8-ESuvK2hZ8-Nhdx6fCgwdpCKgq494Y7AGw77t-XVWlsFU4Hhhhw9ndY4VyFmhr2D3VpXpbRzdHh9cFx1CRniPIkllVkqbIiFTyPlXHMOsGMX-YMpywnxFmVxrFmmkihKXGx1UJwKwWRmsqEK9dLVtBEURZ2FWHrvNthlGaxf8qIUz1mYm6J93SY4z2-hlg7JFneMJdDAo3HLJygC5GB-jJQX0ZpXQjqW0Pdd7l-zd3xq8SeH6Gs-YyHv9beaSzjQ0Kb6llDSno4N0nX_9TeBpoGyRoquIkmqsHIbnmXp9LbwajfAJTT79Y |
linkProvider | IOP Publishing |
linkToPdf | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpV3fT9UwFD7hRzT6IIoYAZE--GZ2121t1z4S5AZQkURJeFvatcVE3W7uHYny19PT7V7QhBDD29b1NNvpWXvafuc7AO9qpZ0TkiaZ1mGBwpVNlPYKkQClL7inZYyQ-3wiDs_Y8Tk_X4KDRSxMOxmG_lG47ImCexUOgDiZIm4-QZ67lLFQmCL5AM3SifXLsMoLUSCF_tGX0_mAHKrHBJYLuXmg8J1t_TVHLYf3iBE9jdfNxa3JZ7zWg0RmkbMQMSc_RpedGdVX_zA6Pvi7nsOzwT0le73QC1hyzTo8vUVauA6PImi0nr2Er8HGyK-bTUbSejIdMLeYkgLvgwFPEeNOJt_brrWui6cEM4J4-wuiSa1jTYP7iKa1fzbgbHzwbf8wGZI0JHWRqy5xTDtZSlHn2nruvOQ2THdWMF5T6p0u89xwQ5U0jPrcGSmFU5Iqw1QhtM-KV7DStI17DcT54H5YbXgennLqdcZtLhwNHg_3IhObwOfdUtUDgzkm0vhZxZN0KStUYYUqrBjrC1GFm5Au5CY9h8e9Eu9DL1XD7zy7t_buYB03EsZ2vw2mpsfzk3Lrv9rbhcenH8bVp6OTj9vwBBvp0YNvYKWbXrqd4AV15m208Wv8evU6 |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=The+measurement+of+responsivity+of+infrared+photodetectors+using+a+cavity+blackbody&rft.jtitle=Journal+of+semiconductors&rft.au=Li%2C+Nong&rft.au=Jiang%2C+Dongwei&rft.au=Wang%2C+Guowei&rft.au=Chen%2C+Weiqiang&rft.date=2023-10-01&rft.issn=1674-4926&rft.eissn=2058-6140&rft.volume=44&rft.issue=10&rft.spage=102301&rft_id=info:doi/10.1088%2F1674-4926%2F44%2F10%2F102301&rft.externalDBID=n%2Fa&rft.externalDocID=10_1088_1674_4926_44_10_102301 |
thumbnail_s | http://utb.summon.serialssolutions.com/2.0.0/image/custom?url=http%3A%2F%2Fwww.wanfangdata.com.cn%2Fimages%2FPeriodicalImages%2Fbdtxb%2Fbdtxb.jpg |