Light-induced effects in a-Si:H(Er)
While the luminescence of a-Si:H(Er) has been studied quite extensively there is no data on the light-induced effects in this material. The latter, however, are important for electroluminescent devices. We have investigated the light-induced metastable state in a-Si:H(Er) with the measurements of op...
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Published in | Materials science & engineering. B, Solid-state materials for advanced technology Vol. 105; no. 1; pp. 153 - 156 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
15.12.2003
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Subjects | |
Online Access | Get full text |
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Summary: | While the luminescence of a-Si:H(Er) has been studied quite extensively there is no data on the light-induced effects in this material. The latter, however, are important for electroluminescent devices. We have investigated the light-induced metastable state in a-Si:H(Er) with the measurements of optical absorption in the below-gap region and dark conductivity before and after illumination of the films by band gap light. PECVD a-Si:H(Er) films prepared under various conditions have been studied. To elucidate the details concerning the peculiarities of light-induced phenomena in a-Si:H(Er) the obtained results have been compared with the data for a-Si:H(As) films with similar Fermi level position. We have found that after long illumination time the changes of electric properties of a-Si:H(Er) films were determined by dangling bond creation as in a-Si:H(As) film. For short illumination time the persistent photoconductivity was observed in a-Si:H(Er) films. A possible origin of this phenomenon is discussed from the viewpoint of structural disorder induced by erbium–oxygen complexes incorporation. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0921-5107 1873-4944 |
DOI: | 10.1016/j.mseb.2003.08.034 |