GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNx as Gate Dielectric - Mengyuan Hua; Cheng Liu; Shu Yang; Shenghou Liu; Kai Fu; Zhihua Dong; Yong Cai; Baoshun Zhang; Chen, Kevin J. (IEEE electron device letters, 2015)
Keywords: Aluminum gallium nitride; Dielectrics; Gallium nitride; Leakage currents; Logic gates; Silicon nitride; LPCVD; silicon nitride; MIS-HEMT; Gallium nitride; gate dielectric