Forward-Capacitance Measurement on Wide-Bandgap Light-Emitting Diodes

Capacitance-voltage characteristics of a GaN-based light-emitting diode under high forward bias is investigated. We examine the validity of measurement results from different measurement systems and then consider the equivalent circuits used to extract the device capacitance. By analyzing the magnit...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 28; no. 21; pp. 2407 - 2410
Main Authors Han, Dong-Pyo, Kim, Young-Jin, Shim, Jong-In, Shin, Dong-Soo
Format Journal Article
LanguageEnglish
Published IEEE 01.11.2016
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