Forward-Capacitance Measurement on Wide-Bandgap Light-Emitting Diodes
Capacitance-voltage characteristics of a GaN-based light-emitting diode under high forward bias is investigated. We examine the validity of measurement results from different measurement systems and then consider the equivalent circuits used to extract the device capacitance. By analyzing the magnit...
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Published in | IEEE photonics technology letters Vol. 28; no. 21; pp. 2407 - 2410 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
IEEE
01.11.2016
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Subjects | |
Online Access | Get full text |
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