Hot-Wall Chemical-Vapor-Deposition of Amorphous-Silicon and Its Application to Thin-Film Transistors

Hot-wall chemical vapor deposition of amorphous-silicon has been investigated, aiming at a batch process for thin-film transistors (TFTs). High-performance TFTs (mobility=1.7 cm 2 /Vs, threshold voltage =9 V and subthreshold voltage swing =0.8 V/decade) have been successfully fabricated. Similar goo...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 30; no. 12S; p. 3695
Main Authors Ahn, Byung-Chul, Shimizu, Kazuhiro, Satoh, Tsutomu, Kanoh, Hiroshi, Osamu Sugiura, Osamu Sugiura, Masakiyo Matsumura, Masakiyo Matsumura
Format Journal Article
LanguageEnglish
Published 01.12.1991
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Summary:Hot-wall chemical vapor deposition of amorphous-silicon has been investigated, aiming at a batch process for thin-film transistors (TFTs). High-performance TFTs (mobility=1.7 cm 2 /Vs, threshold voltage =9 V and subthreshold voltage swing =0.8 V/decade) have been successfully fabricated. Similar good TFT characteristics were obtained over a wide range of a-Si deposition conditions.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.30.3695