Molecular structure-dependent deformations in boron nitride nanostructures subject to an electrical field

• Published in: Journal of physics. D, Applied physics Vol. 46; no. 23; pp. 235303 - 235307
• Main Authors: Zhang, Jin, Wang, Chengyuan, Adhikari, Sondipon
• Format: Journal Article
• Language: English
• Published: Bristol IOP Publishing 13.06.2013; Institute of Physics
• Subjects: Boron nitride nanostructures; Buckling; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Molecular structural mechanics; Nanoscale materials and structures: fabrication and characterization; Nanotubes; Physics; Piezoelectricity; Nanoplate; Shear; Molecular structure; Electric field effects; Shear deformation; Nanotubes; Boron nitride; Nanostructures; Critical field; Aspect ratio; Buckling
• DOI: 10.1088/0022-3727/46/23/235303
• ISSN: 0022-3727

Based on a molecular mechanics approach pre-buckling and buckling deformations are studied for boron nitride nanotubes (BNNTs) and nanosheets (BNNSs) subject to an electrical field. Due to the reverse piezoelectric effect a compressive or shear force is generated for those of zigzag and armchair structures, respectively. As a result, axial deformation and buckling occur for zigzag BNNTs and BNNSs, while a torsional or shear deformation occurs for their armchair counterparts, followed by the corresponding buckling. The critical buckling electrical field is also studied and found to decrease as the aspect ratio of BNNTs and BNNSs increases. Such an effect of the aspect ratio turns out to be more pronounced for the buckling of armchair BNNTs and BNNSs.