APA (7th ed.) Citation

Wu, Y., Tsai, M., & Huang, C. (2022). Resistive switching characteristics of sol-gel derived ZrCeOx thin films for nonvolatile memory applications. Materials science & engineering. B, Solid-state materials for advanced technology, 277, 115605. https://doi.org/10.1016/j.mseb.2022.115605

Chicago Style (17th ed.) Citation

Wu, You-Shen, Meng-Hung Tsai, and Cheng-Liang Huang. "Resistive Switching Characteristics of Sol-gel Derived ZrCeOx Thin Films for Nonvolatile Memory Applications." Materials Science & Engineering. B, Solid-state Materials for Advanced Technology 277 (2022): 115605. https://doi.org/10.1016/j.mseb.2022.115605.

MLA (9th ed.) Citation

Wu, You-Shen, et al. "Resistive Switching Characteristics of Sol-gel Derived ZrCeOx Thin Films for Nonvolatile Memory Applications." Materials Science & Engineering. B, Solid-state Materials for Advanced Technology, vol. 277, 2022, p. 115605, https://doi.org/10.1016/j.mseb.2022.115605.