Self-contained InGaN/GaN micro-crystal arrays as individually addressable multi-color emitting pixels on a deformable substrate

InGaN/GaN micro-crystals (μ-crystals) are self-contained and individually-addressable light emitting crystals that have unique potential in the development of ultra-small and ultra-high resolution pixels for next-generation displays. In this study, we explore the electrically-driven light emission b...

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Published inJournal of alloys and compounds Vol. 803; pp. 826 - 833
Main Authors Yang, Dong Won, Lee, Keundong, Jang, Suhee, Chang, Won Jun, Kim, Su Han, Lee, Jae Hyung, Yi, Gyu-Chul, Park, Won Il
Format Journal Article
LanguageEnglish
Published Lausanne Elsevier BV 30.09.2019
Subjects
Cathodoluminescence
Crystal structure
Crystals
Deformation
Electroluminescence
Emission analysis
Emission spectra
Finite element method
Formability
Gallium nitrides
Indium gallium nitrides
Light emission
Microcrystals
Organic light emitting diodes
Photoluminescence
Pixels
Quantum wells
Scanning transmission electron microscopy
Strain distribution
Substrates
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Abstract InGaN/GaN micro-crystals (μ-crystals) are self-contained and individually-addressable light emitting crystals that have unique potential in the development of ultra-small and ultra-high resolution pixels for next-generation displays. In this study, we explore the electrically-driven light emission behavior of vertically standing InGaN/GaN micro-crystals (μ-crystals) with well-defined crystal facets and tunable size. InGaN/GaN μ-crystals have hollow pedestals weakly bound to the substrate surface, thus enabling individual manipulation and/or collective transfer to other target surfaces. Cyclic bending tests and finite element analysis (FEA) of the strain distribution further highlight the excellent mechanical deformability of a device layout consisting of μ-crystal pixels embedded in a polymeric matrix. Light-emitting diodes (LEDs) with individual InGaN/GaN μ-crystals exhibit strong electroluminescence (EL) with unique features such as variations in emission spectra with respect to crystal diameter and driving voltage bias. Comparative analyses of photoluminescence, cathodoluminescence, and electric potential simulation indicate a strong correlation between the EL wavelengths and dominant emitting regions of InGaN/GaN polyhedral crystal planes. This is further supported by scanning transmission electron microscopy of quantum well structures, which strongly depend on both size and the crystal facets.
AbstractList InGaN/GaN micro-crystals (μ-crystals) are self-contained and individually-addressable light emitting crystals that have unique potential in the development of ultra-small and ultra-high resolution pixels for next-generation displays. In this study, we explore the electrically-driven light emission behavior of vertically standing InGaN/GaN micro-crystals (μ-crystals) with well-defined crystal facets and tunable size. InGaN/GaN μ-crystals have hollow pedestals weakly bound to the substrate surface, thus enabling individual manipulation and/or collective transfer to other target surfaces. Cyclic bending tests and finite element analysis (FEA) of the strain distribution further highlight the excellent mechanical deformability of a device layout consisting of μ-crystal pixels embedded in a polymeric matrix. Light-emitting diodes (LEDs) with individual InGaN/GaN μ-crystals exhibit strong electroluminescence (EL) with unique features such as variations in emission spectra with respect to crystal diameter and driving voltage bias. Comparative analyses of photoluminescence, cathodoluminescence, and electric potential simulation indicate a strong correlation between the EL wavelengths and dominant emitting regions of InGaN/GaN polyhedral crystal planes. This is further supported by scanning transmission electron microscopy of quantum well structures, which strongly depend on both size and the crystal facets.
Author Lee, Keundong
Park, Won Il
Yang, Dong Won
Chang, Won Jun
Jang, Suhee
Yi, Gyu-Chul
Kim, Su Han
Lee, Jae Hyung
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Snippet InGaN/GaN micro-crystals (μ-crystals) are self-contained and individually-addressable light emitting crystals that have unique potential in the development of...
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SubjectTerms Cathodoluminescence
Crystal structure
Crystals
Deformation
Electroluminescence
Emission analysis
Emission spectra
Finite element method
Formability
Gallium nitrides
Indium gallium nitrides
Light emission
Microcrystals
Organic light emitting diodes
Photoluminescence
Pixels
Quantum wells
Scanning transmission electron microscopy
Strain distribution
Substrates
Title Self-contained InGaN/GaN micro-crystal arrays as individually addressable multi-color emitting pixels on a deformable substrate
URI https://www.proquest.com/docview/2278888013
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