APA (7th ed.) Citation

Chu, Y., Tsai, M., & Huang, C. (2021). Resistive switching properties and conduction mechanisms of LaSmOx thin film by RF sputtering for RRAM applications. Materials science & engineering. B, Solid-state materials for advanced technology, 271, 115313. https://doi.org/10.1016/j.mseb.2021.115313

Chicago Style (17th ed.) Citation

Chu, Yu-Tseng, Meng-Hung Tsai, and Cheng-Liang Huang. "Resistive Switching Properties and Conduction Mechanisms of LaSmOx Thin Film by RF Sputtering for RRAM Applications." Materials Science & Engineering. B, Solid-state Materials for Advanced Technology 271 (2021): 115313. https://doi.org/10.1016/j.mseb.2021.115313.

MLA (9th ed.) Citation

Chu, Yu-Tseng, et al. "Resistive Switching Properties and Conduction Mechanisms of LaSmOx Thin Film by RF Sputtering for RRAM Applications." Materials Science & Engineering. B, Solid-state Materials for Advanced Technology, vol. 271, 2021, p. 115313, https://doi.org/10.1016/j.mseb.2021.115313.