CMOS‐Integrated Ternary Content Addressable Memory using Nanocavity CBRAMs for High Sensing Margin

• Published in: Small (Weinheim an der Bergstrasse, Germany) Vol. 20; no. 34; pp. e2310943 - n/a
• Main Authors: Hyun, Gihwan, Alimkhanuly, Batyrbek, Seo, Donguk, Lee, Minwoo, Bae, Junseong, Lee, Seunghyun, Patil, Shubham, Hwang, Youngcheol, Kadyrov, Arman, Yoo, Hyungyu, Devnath, Anupom, Lee, Yoonmyung
• Format: Journal Article
• Language: English
• Published: Germany Wiley Subscription Services, Inc 01.08.2024
• Subjects: anodic aluminum oxide template; Arrays; Associative memory; CMOS; CMOS integration; conductive bridge random‐access memory; memory sensing margin; Static random access memory; ternary content addressable memory; Transistors; anodic aluminum oxide template; memory sensing margin; CMOS integration; ternary content addressable memory; conductive bridge random‐access memory

The development of data‐intensive computing methods imposes a significant load on the hardware, requiring progress toward a memory‐centric paradigm. Within this context, ternary content‐addressable memory (TCAM) can become an essential platform for high‐speed in‐memory matching applications of large...