CMOS‐Integrated Ternary Content Addressable Memory using Nanocavity CBRAMs for High Sensing Margin - Hyun, Gihwan; Alimkhanuly, Batyrbek; Seo, Donguk; Lee, Minwoo; Bae, Junseong; Lee, Seunghyun; Patil, Shubham; Hwang, Youngcheol; Kadyrov, Arman; Yoo, Hyungyu; Devnath, Anupom; Lee, Yoonmyung; et al. (Small (Weinheim an der Bergstrasse, Germany), 2024)
Keywords: anodic aluminum oxide template; Arrays; Associative memory; CMOS; CMOS integration; conductive bridge random‐access memory; memory sensing margin; Static random access memory; ternary content addressable memory; Transistors; anodic aluminum oxide template; memory sensing margin; CMOS integration; ternary content addressable memory; conductive bridge random‐access memory