APA (7th ed.) Citation

Hyun, G., Alimkhanuly, B., Seo, D., Lee, M., Bae, J., Lee, S., . . . Lee, S. (2024). CMOS‐Integrated Ternary Content Addressable Memory using Nanocavity CBRAMs for High Sensing Margin. Small (Weinheim an der Bergstrasse, Germany), 20(34), e2310943-n/a. https://doi.org/10.1002/smll.202310943

Chicago Style (17th ed.) Citation

Hyun, Gihwan, et al. "CMOS‐Integrated Ternary Content Addressable Memory Using Nanocavity CBRAMs for High Sensing Margin." Small (Weinheim an Der Bergstrasse, Germany) 20, no. 34 (2024): e2310943-n/a. https://doi.org/10.1002/smll.202310943.

MLA (9th ed.) Citation

Hyun, Gihwan, et al. "CMOS‐Integrated Ternary Content Addressable Memory Using Nanocavity CBRAMs for High Sensing Margin." Small (Weinheim an Der Bergstrasse, Germany), vol. 20, no. 34, 2024, pp. e2310943-n/a, https://doi.org/10.1002/smll.202310943.