Effect of Fe Doping Profile on Current Collapse in GaN‐based RF HEMTs

• Published in: Chemistry : a European journal Vol. 30; no. 27; pp. e202304100 - n/a
• Main Authors: Xu, Linling, Guo, Hui, Tao, Jiaqi, Zavabeti, Ali, Zhou, Yugang, Zheng, Youdou, Zhang, Rong, Chen, Dunjun
• Format: Journal Article
• Language: English
• Published: Germany Wiley Subscription Services, Inc 14.05.2024
• Subjects: current collapse; Decay; Decay rate; Density; Doping; doping profile; Electron gas; Fabrication; Fe traps; Gallium nitrides; GaN-based RF HEMTs; High electron mobility transistors; Radio frequency; Semiconductor devices; Simulation models; Trapping; current collapse; doping profile; GaN-based RF HEMTs; Fe traps
• ISSN: 0947-6539; 1521-3765
• DOI: 10.1002/chem.202304100

Using computer‐aided design (TCAD) simulation, the impact of the Fe doping profile, including concentration, decay rate, and depth of the doping region on current‐collapse magnitude (▵CC) in 0.5‐μm gated GaN‐based high electron mobility transistors (HEMTs) is systematically investigated. Accurate simulation models are established and developed to facilitate the fabrication of electronics. It is elucidated that the intricate interplay between trapping and de‐trapping of Fe‐related traps at the gate‐drain edge is responsible for current collapse. The concentration and decay rate of the doping region have a more significant impact on current collapse than the depth. Increased trap state density near two‐dimensional electron gas (2DEG) channel caused by deep‐level acceptors would boost ▵CC. However, a minor dynamic reduction in 2DEG density (nT) induces a relatively small ▵CC. By adjusting the concentration, decay rate, and depth of the doping region, ▵CC of GaN‐based Radio Frequency (RF) HEMTs can be reduced by approximately 50.3 %. The optimized distribution of Fe doping discussed in this work helps to prepare GaN‐based RF HEMTs with a limited current collapse effect. Accurate simulation models are established and developed to investigate Fe doping profile on current collapse in GaN‐based Radio Frequency (RF) high electron mobility transistors (HEMTs). By controlling Fe doping profile in GaN buffer layer, current‐collapse magnitude (▵CC) of GaN‐based RF HEMTs can be reduced by approximately 50.3 %.