Annealing-induced interfacial atomic intermixing in InAs/GaSb type II superlattices
We have investigated the effect of post-growth rapid thermal annealing (RTA) on the interface structure and atomic intermixing of InAs/GaSb type II superlattices (T2SLs). It is found that the mechanism of interfacial atomic interdiffusion of the anion (In/Ga) and the cation (As/Sb) is different. The...
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| Published in | Applied physics letters Vol. 111; no. 17 |
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| Main Authors | , , , , |
| Format | Journal Article |
| Language | English |
| Published |
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American Institute of Physics
23.10.2017
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| Abstract | We have investigated the effect of post-growth rapid thermal annealing (RTA) on the interface structure and atomic intermixing of InAs/GaSb type II superlattices (T2SLs). It is found that the mechanism of interfacial atomic interdiffusion of the anion (In/Ga) and the cation (As/Sb) is different. The activation energies of 0.62 eV and 0.27 eV are calculated to describe the In/Ga and As/Sb interdiffusion. In T2SLs, RTA will promote As/Sb intermixing across the interfaces between 450 and 480 °C, while In/Ga intermixing will be activated at 500 °C annealing. This demonstrates that the appropriate In/Ga intermixing is important to control the deterioration of the interfacial quality and the formation of dislocations, which is very crucial for the device performance. |
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| AbstractList | We have investigated the effect of post-growth rapid thermal annealing (RTA) on the interface structure and atomic intermixing of InAs/GaSb type II superlattices (T2SLs). It is found that the mechanism of interfacial atomic interdiffusion of the anion (In/Ga) and the cation (As/Sb) is different. The activation energies of 0.62 eV and 0.27 eV are calculated to describe the In/Ga and As/Sb interdiffusion. In T2SLs, RTA will promote As/Sb intermixing across the interfaces between 450 and 480 °C, while In/Ga intermixing will be activated at 500 °C annealing. This demonstrates that the appropriate In/Ga intermixing is important to control the deterioration of the interfacial quality and the formation of dislocations, which is very crucial for the device performance. |
| Author | Guo, Fengyun Jiang, Dongwei Li, Xiaochao Zhao, Liancheng Zhang, Yong |
| Author_xml | – sequence: 1 givenname: Xiaochao surname: Li fullname: Li, Xiaochao organization: School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China – sequence: 2 givenname: Yong surname: Zhang fullname: Zhang, Yong email: yongzhang@hit.edu.cn organization: School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China – sequence: 3 givenname: Dongwei surname: Jiang fullname: Jiang, Dongwei organization: School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China – sequence: 4 givenname: Fengyun surname: Guo fullname: Guo, Fengyun organization: School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China – sequence: 5 givenname: Liancheng surname: Zhao fullname: Zhao, Liancheng organization: School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China |
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| SubjectTerms | Annealing Applied physics Atomic structure Dislocations Gallium antimonides Interdiffusion Superlattices |
| Title | Annealing-induced interfacial atomic intermixing in InAs/GaSb type II superlattices |
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