GaAs–AlGaAs heterostructure thyristors with completely optical transfer of emitter current

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 45; no. 4; pp. 515 - 518
• Main Authors: Danil’chenko, V. G., Korol’kov, V. I., Ponomarev, S. I., Soldatenkov, F. Yu
• Format: Journal Article
• Language: English
• Published: Dordrecht SP MAIK Nauka/Interperiodica 01.04.2011; Springer
• Subjects: Gallium arsenide; Magnetic Materials; Magnetism; Physics; Physics and Astronomy; Physics of Semiconductor Devices; Transistors; Space Charge Region; GaAs Layer; Liquid Phase Epitaxy; Emitter Current; GaAs

Several variants of thyristors based on GaAs-AlGaAs heterostructures with optical transfer of the emitter current are considered. The possibility that thyristors with fully optical transfer of the emitter current can be, in principle, created is demonstrated by means of the results of a study of n -...