GaAs–AlGaAs heterostructure thyristors with completely optical transfer of emitter current

Several variants of thyristors based on GaAs-AlGaAs heterostructures with optical transfer of the emitter current are considered. The possibility that thyristors with fully optical transfer of the emitter current can be, in principle, created is demonstrated by means of the results of a study of n -...

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Published inSemiconductors (Woodbury, N.Y.) Vol. 45; no. 4; pp. 515 - 518
Main Authors Danil’chenko, V. G., Korol’kov, V. I., Ponomarev, S. I., Soldatenkov, F. Yu
Format Journal Article
LanguageEnglish
Published Dordrecht SP MAIK Nauka/Interperiodica 01.04.2011
Springer
Subjects
Gallium arsenide
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Physics of Semiconductor Devices
Transistors
Space Charge Region
GaAs Layer
Liquid Phase Epitaxy
Emitter Current
GaAs
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Summary:Several variants of thyristors based on GaAs-AlGaAs heterostructures with optical transfer of the emitter current are considered. The possibility that thyristors with fully optical transfer of the emitter current can be, in principle, created is demonstrated by means of the results of a study of n - p - n and p - n - p optoelectronic transistors in which the emitter current is converted into light, this light, in turn, being converted into a collector current. Structures of optoelectronic switches of this kind are presented. A switch comprising three constituent transistors has been suggested and fabricated taking into account specific features of the technique for growth of undoped GaAs layers and fabrication of high-voltage p 0 - n 0 junctions with back-ground impurities from these layers, which makes the turn-on delay cardinally shorter and raises the working frequency.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782611040075