p-type AlN based heteroepitaxial diodes with Schottky, Pin, and junction barrier Schottky character achieving significant breakdown performance - Ahmad, Habib; Engel, Zachary; Matthews, Christopher M.; Doolittle, W. Alan (Journal of applied physics, 2021)
Keywords: Aluminum nitride; Applied physics; Breakdown; Density; Design optimization; Design parameters; Diodes; Doping; Electric potential; Electronic devices; Epitaxial growth; Gallium nitrides; PIN diodes; Plasma etching; Schottky diodes; Stress cracking; Voltage