APA (7th ed.) Citation

Ahmad, H., Engel, Z., Matthews, C. M., & Doolittle, W. A. (2021). p-type AlN based heteroepitaxial diodes with Schottky, Pin, and junction barrier Schottky character achieving significant breakdown performance. Journal of applied physics, 130(19), . https://doi.org/10.1063/5.0069539

Chicago Style (17th ed.) Citation

Ahmad, Habib, Zachary Engel, Christopher M. Matthews, and W. Alan Doolittle. "P-type AlN Based Heteroepitaxial Diodes with Schottky, Pin, and Junction Barrier Schottky Character Achieving Significant Breakdown Performance." Journal of Applied Physics 130, no. 19 (2021). https://doi.org/10.1063/5.0069539.

MLA (9th ed.) Citation

Ahmad, Habib, et al. "P-type AlN Based Heteroepitaxial Diodes with Schottky, Pin, and Junction Barrier Schottky Character Achieving Significant Breakdown Performance." Journal of Applied Physics, vol. 130, no. 19, 2021, https://doi.org/10.1063/5.0069539.