Gate-enhanced broadband photodetection based on Cd3As2/graphene Dirac heterojunctions
Dirac semimetals are promising materials for broadband and fast photodetection due to their gapless nature. Dirac heterostructures consisting of 2D Dirac semimetal graphene and its 3D analogue Cd3As2 should take the ascendency of high carrier mobility in both materials, while overcome the limitation...
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| Published in | Applied physics letters Vol. 122; no. 3 |
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| Main Authors | , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Melville
American Institute of Physics
16.01.2023
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| Abstract | Dirac semimetals are promising materials for broadband and fast photodetection due to their gapless nature. Dirac heterostructures consisting of 2D Dirac semimetal graphene and its 3D analogue Cd3As2 should take the ascendency of high carrier mobility in both materials, while overcome the limitation of weak optical absorption in graphene-based devices and suppress the dark current occurring in pure Cd3As2 photodetectors. Herein, we report high-performance photodetectors based on a 3D Dirac semimetal Cd3As2/monolayer graphene heterostructure, which show broadband photoresponse from visible (488 nm) to mid-infrared (10 μm) wavelength region at room temperature without an external bias. The photodetectors are with a maximum responsivity of 0.34 mA/W at 488 nm and a fast response speed of ∼13 μs. In addition, the photoresponse can be enhanced by a gate voltage even in a long wavelength region. Our work suggests that the combination of the graphene and 3D Dirac semimetal is promising for high-performance photodetectors with broadband detection, high sensitivity, and rapid response. |
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| AbstractList | Dirac semimetals are promising materials for broadband and fast photodetection due to their gapless nature. Dirac heterostructures consisting of 2D Dirac semimetal graphene and its 3D analogue Cd3As2 should take the ascendency of high carrier mobility in both materials, while overcome the limitation of weak optical absorption in graphene-based devices and suppress the dark current occurring in pure Cd3As2 photodetectors. Herein, we report high-performance photodetectors based on a 3D Dirac semimetal Cd3As2/monolayer graphene heterostructure, which show broadband photoresponse from visible (488 nm) to mid-infrared (10 μm) wavelength region at room temperature without an external bias. The photodetectors are with a maximum responsivity of 0.34 mA/W at 488 nm and a fast response speed of ∼13 μs. In addition, the photoresponse can be enhanced by a gate voltage even in a long wavelength region. Our work suggests that the combination of the graphene and 3D Dirac semimetal is promising for high-performance photodetectors with broadband detection, high sensitivity, and rapid response. |
| Author | Liao, Xin Wang, An-Qi Liao, Zhi-Min Li, Na Xu, Chang Fan, Zi-Pu Lan, Ying-Ying Sun, Dong Chu, Chun-Guang |
| Author_xml | – sequence: 1 givenname: Xin surname: Liao fullname: Liao, Xin organization: State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University – sequence: 2 givenname: Chang surname: Xu fullname: Xu, Chang organization: International Center for Quantum Materials, School of Physics, Peking University – sequence: 3 givenname: Zi-Pu surname: Fan fullname: Fan, Zi-Pu organization: International Center for Quantum Materials, School of Physics, Peking University – sequence: 4 givenname: Ying-Ying surname: Lan fullname: Lan, Ying-Ying organization: School of Microelectronics Science and Technology, Sun Yat-sen University – sequence: 5 givenname: Na surname: Li fullname: Li, Na organization: State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University – sequence: 6 givenname: Chun-Guang surname: Chu fullname: Chu, Chun-Guang organization: State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University – sequence: 7 givenname: An-Qi surname: Wang fullname: Wang, An-Qi organization: State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University – sequence: 8 givenname: Dong surname: Sun fullname: Sun, Dong organization: International Center for Quantum Materials, School of Physics, Peking University – sequence: 9 givenname: Zhi-Min surname: Liao fullname: Liao, Zhi-Min organization: State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University |
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| Title | Gate-enhanced broadband photodetection based on Cd3As2/graphene Dirac heterojunctions |
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