Significant performance and stability improvement of low-voltage InZnO thin-film transistors by slight La doping

• Published in: Applied physics letters Vol. 121; no. 6
• Main Authors: Cai, Wensi, Li, Mengchao, Li, Haiyun, Qian, Qingkai, Zang, Zhigang
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 08.08.2022
• Subjects: Applied physics; Backplanes; Carrier density; Electric potential; Semiconductor devices; Stability; Thin film transistors; Transistors; Voltage

Low-voltage, solution-processed oxide thin-film transistors (TFTs) have shown great potential in next-generation low-power, printable electronics. However, it is now still quite challenging to obtain low-voltage oxide TFTs with both high mobility and stability, especially for solution-processed ones...