Multilevel switching in Mg-doped HfOx memristor through the mutual-ion effect

• Published in: Applied physics letters Vol. 119; no. 15
• Main Authors: Li, Li-Heng, Xue, Kan-Hao, Zou, Lan-Qing, Yuan, Jun-Hui, Sun, Huajun, Miao, Xiangshui
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 11.10.2021
• Subjects: Aluminum; Applied physics; Dopants; Doping; Filaments; First principles; Gadolinium; Magnesium; Memristors; Modulation; Switching; Transition metal oxides

HfOx memristor is one of the most promising candidates for nonvolatile memory and neuromorphic computing applications, but for the latter, its gradual conduction modulation and switching linearity still need improvement. In this work, uniform and multilevel resistance switching (RS) of HfOx memristo...