Ultrahigh speed graphene diode with reversible polarity

The ability to tune the carrier-type concentration ratio with applied field along with a mean-free path length approaching 1μm in graphene enables a new diode in which the diode polarity can be reversed. The diode consists of a thin graphene film with a geometric asymmetry that determines a preferre...

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Published inSolid state communications Vol. 152; no. 19; pp. 1842 - 1845
Main Authors Moddel, Garret, Zhu, Zixu, Grover, Sachit, Joshi, Saumil
Format Journal Article
LanguageEnglish
Published Kidlington Elsevier Ltd 01.10.2012
Elsevier
Subjects
A. Graphene
C. Diode
Condensed matter: electronic structure, electrical, magnetic, and optical properties
D. Dirac point
D. Terahertz
Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
Thin films and multilayers
D. Terahertz
A. Graphene
C. Diode
D. Dirac point
Rectification
Patterning
Mean free path
Etching
Diodes
Thin films
Graphene
Polarity
Transport processes
Carrier mobility
Carrier density
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Abstract The ability to tune the carrier-type concentration ratio with applied field along with a mean-free path length approaching 1μm in graphene enables a new diode in which the diode polarity can be reversed. The diode consists of a thin graphene film with a geometric asymmetry that determines a preferred direction for charge-carrier transport, independent of whether the carriers are electrons or holes. We fabricated submicron geometric diodes by patterning and etching exfoliated graphene. Applying field-effect voltages to the substrate, we reversed the carrier type and demonstrated reversal of the diode polarity. The graphene geometric diodes exhibited rectification at 28THz, opening the way to ultrahigh speed applications for these versatile devices. ► Geometric diodes showing electrical asymmetry were formed from asymmetric graphene structures. ► The polarity of the electrical asymmetry is a function of carrier type. ► Carrier type and hence diode polarity reversed with shifting applied gate voltage. ► The graphene geometric diode operates at a frequency of at least 28THz. ► The reversible diodes can be applied to ultra-high-speed digital memory and flip–flops.
AbstractList The ability to tune the carrier-type concentration ratio with applied field along with a mean-free path length approaching 1μm in graphene enables a new diode in which the diode polarity can be reversed. The diode consists of a thin graphene film with a geometric asymmetry that determines a preferred direction for charge-carrier transport, independent of whether the carriers are electrons or holes. We fabricated submicron geometric diodes by patterning and etching exfoliated graphene. Applying field-effect voltages to the substrate, we reversed the carrier type and demonstrated reversal of the diode polarity. The graphene geometric diodes exhibited rectification at 28THz, opening the way to ultrahigh speed applications for these versatile devices. ► Geometric diodes showing electrical asymmetry were formed from asymmetric graphene structures. ► The polarity of the electrical asymmetry is a function of carrier type. ► Carrier type and hence diode polarity reversed with shifting applied gate voltage. ► The graphene geometric diode operates at a frequency of at least 28THz. ► The reversible diodes can be applied to ultra-high-speed digital memory and flip–flops.
Author Moddel, Garret
Joshi, Saumil
Zhu, Zixu
Grover, Sachit
Author_xml – sequence: 1
  givenname: Garret
  surname: Moddel
  fullname: Moddel, Garret
  email: moddel@colorado.edu
– sequence: 2
  givenname: Zixu
  surname: Zhu
  fullname: Zhu, Zixu
– sequence: 3
  givenname: Sachit
  surname: Grover
  fullname: Grover, Sachit
– sequence: 4
  givenname: Saumil
  surname: Joshi
  fullname: Joshi, Saumil
BackLink http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=26336824$$DView record in Pascal Francis
BookMark eNp9jz1PwzAURS1UJNrCD2DLwpjwbCcvjphQxZdUiYXOlmO_NK5CEtlRUf89QUWMTHe5516dFVv0Q0-M3XLIOHC8P2Qx2kwAFxlgBlxesCVXZZWKEnHBlgBSpRwqdcVWMR4AoFQlX7Jy103BtH7fJnEkcsk-mLGlnhLnB0fJl5_aJNCRQvR1R8k4dCb46XTNLhvTRbr5zTXbPT99bF7T7fvL2-Zxm1opyilV3CiXY2mahngupUDlRFNTwS2iKcAoLKrKYmFl7SgvIBeFrdChhTrPlZRrxs-7NgwxBmr0GPynCSfNQf-Y64OezfWPuQbUs_nM3J2Z0URruiaY3vr4BwqUEpXI597DuUezwNFT0NF66i05H8hO2g3-n5dvCPRvgQ
CODEN SSCOA4
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ContentType Journal Article
Copyright 2012 Elsevier Ltd
2015 INIST-CNRS
Copyright_xml – notice: 2012 Elsevier Ltd
– notice: 2015 INIST-CNRS
DBID IQODW
AAYXX
CITATION
DOI 10.1016/j.ssc.2012.06.013
DatabaseName Pascal-Francis
CrossRef
DatabaseTitle CrossRef
DatabaseTitleList
DeliveryMethod fulltext_linktorsrc
Discipline Chemistry
Physics
EISSN 1879-2766
EndPage 1845
ExternalDocumentID 10_1016_j_ssc_2012_06_013
26336824
S003810981200381X
GroupedDBID --K
--M
-~X
.~1
0R~
123
1B1
1RT
1~.
1~5
3O-
4.4
457
4G.
5VS
6TJ
7-5
71M
8P~
9JN
AABNK
AABXZ
AACTN
AAEDT
AAEDW
AAEPC
AAIAV
AAIKJ
AAKOC
AALRI
AAOAW
AAQFI
AAQXK
AAXUO
ABFNM
ABFRF
ABJNI
ABMAC
ABNEU
ABTAH
ABXDB
ABXRA
ABYKQ
ACBEA
ACDAQ
ACFVG
ACGFO
ACGFS
ACNCT
ACNNM
ACRLP
ADBBV
ADEZE
ADIYS
ADMUD
AEBSH
AEFWE
AEKER
AENEX
AEZYN
AFFNX
AFKWA
AFRZQ
AFTJW
AGHFR
AGUBO
AGYEJ
AHHHB
AIEXJ
AIKHN
AITUG
AIVDX
AJBFU
AJOXV
ALMA_UNASSIGNED_HOLDINGS
AMFUW
AMRAJ
ASPBG
AVWKF
AXJTR
AZFZN
BBWZM
BKOJK
BLXMC
CS3
DU5
EBS
EFJIC
EFLBG
EJD
EO8
EO9
EP2
EP3
F5P
FDB
FEDTE
FGOYB
FIRID
FNPLU
FYGXN
G-2
G-Q
GBLVA
HMV
HVGLF
HZ~
H~9
IHE
J1W
KOM
M24
M38
M41
MAGPM
MO0
N9A
NDZJH
O-L
O9-
OAUVE
OGIMB
OZT
P-8
P-9
P2P
PC.
Q38
R2-
RIG
RNS
ROL
RPZ
SDF
SDG
SDP
SES
SEW
SMS
SPC
SPCBC
SPD
SPG
SSM
SSQ
SSZ
T5K
TN5
UQL
WUQ
XFK
XPP
XSW
ZMT
ZY4
~02
~G-
~S-
ABPIF
ABPTK
IQODW
AAXKI
AAYXX
ADVLN
AFJKZ
AKRWK
CITATION
ID FETCH-LOGICAL-c327t-81a8d467affe1433268d2fbe51c66a50a86599c65c3bde450425c96d6c0b44833
IEDL.DBID AIKHN
ISSN 0038-1098
IngestDate Thu Sep 26 16:33:06 EDT 2024
Sun Oct 29 17:07:58 EDT 2023
Fri Feb 23 02:32:08 EST 2024
IsPeerReviewed true
IsScholarly true
Issue 19
Keywords D. Terahertz
A. Graphene
C. Diode
D. Dirac point
Rectification
Patterning
Mean free path
Etching
Diodes
Thin films
Graphene
Polarity
Transport processes
Carrier mobility
Carrier density
Language English
License CC BY 4.0
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-c327t-81a8d467affe1433268d2fbe51c66a50a86599c65c3bde450425c96d6c0b44833
PageCount 4
ParticipantIDs crossref_primary_10_1016_j_ssc_2012_06_013
pascalfrancis_primary_26336824
elsevier_sciencedirect_doi_10_1016_j_ssc_2012_06_013
PublicationCentury 2000
PublicationDate 2012-10-01
PublicationDateYYYYMMDD 2012-10-01
PublicationDate_xml – month: 10
  year: 2012
  text: 2012-10-01
  day: 01
PublicationDecade 2010
PublicationPlace Kidlington
PublicationPlace_xml – name: Kidlington
PublicationTitle Solid state communications
PublicationYear 2012
Publisher Elsevier Ltd
Elsevier
Publisher_xml – name: Elsevier Ltd
– name: Elsevier
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SSID ssj0007871
Score 2.2949197
Snippet The ability to tune the carrier-type concentration ratio with applied field along with a mean-free path length approaching 1μm in graphene enables a new diode...
SourceID crossref
pascalfrancis
elsevier
SourceType Aggregation Database
Index Database
Publisher
StartPage 1842
SubjectTerms A. Graphene
C. Diode
Condensed matter: electronic structure, electrical, magnetic, and optical properties
D. Dirac point
D. Terahertz
Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
Thin films and multilayers
Title Ultrahigh speed graphene diode with reversible polarity
URI https://dx.doi.org/10.1016/j.ssc.2012.06.013
Volume 152
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1LS8NAEB76QBREtCrWR8nBk5A2yT66eyzFUhV7stBb2N1soCJtaOrV3-5sHsUe9OAtCXnxZfebmc3MNwD3Sjo_GScSnpD6NBkyX1tJ_WQohQ2o1VK7eufXGZ_O6fOCLRowrmthXFplxf0lpxdsXR0ZVGgOsuXS1fg6dSqJFqrYWjShjeYoEi1oj55eprMdIeOYLBvnEadkKkX9c7NI88pzJ2ToVgR5PwjJb-bpOFM5gpaW3S5-mKDJKZxUvqM3Kl_vDBp21YHDcd2yrQMHRT6nyc9hOP_YIo1g5O3lGRoorxCmRl7zkuU6sZ5bfvWcetMGp8SH9TIX4aJDfgHzyePbeOpXPRJ8Q6Lh1hehEgmSnUpTGzotMi6SKNWWhYZzxQIlOJPScGaITixlbo4ayRNuAo2RGSGX0FqtV_YKPBNRRjG-EQFR1GihlEpZqmkUKGm5CrvwUEMTZ6UURlzniL3HiGPscIxdnlxIukBr8OK97xkjVf91WW8P6N2DIk4IFxG9_t99b-DI7ZVZeLfQ2m4-7R16E1vdg2b_K-xVY-Ybc07IYQ
link.rule.ids 315,783,787,4509,24128,27936,27937,45597,45691
linkProvider Elsevier
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1LS8NAEB5qiyiI-MT6qDl4EqJJ9tHdoxRLa2tPFnoLu5sNVKSGJv5_Z_Mo9qAHbyFvvux8M7OZ_QbgTkkXJ6Mh4QmpT5M-87WV1E_6UtiAWi21W-_8OuOjOX1ZsEULBs1aGFdWWXN_xeklW9d7Hms0H7Pl0q3xdepUEj1UubXYgQ5GAxKts_M0noxmG0LGMVk1ziNOyVSK5udmWeaV507I0M0I8ocgJL-5p4NM5QhaWnW7-OGChkdwWMeO3lP1esfQsqsT2Bs0LdtOYLes5zT5KfTnHwXSCGbeXp6hg_JKYWrkNS9ZfibWc9OvnlNvWqNJfFgvcxkuBuRnMB8-vw1Gft0jwTck6he-CJVIkOxUmtrQaZFxkUSptiw0nCsWKMGZlIYzQ3RiKXM2aiRPuAk0ZmaEnEN79bmyF-CZiDKK-Y0IiKJGC6VUylJNo0BJy1XYhfsGmjirpDDipkbsPUYcY4dj7OrkQtIF2oAXb33PGKn6r8t6W0BvHhRxQriI6OX_7nsLe6O312k8Hc8mV7DvjlQVedfQLtZf9gYji0L36pHzDVFSylU
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Ultrahigh+speed+graphene+diode+with+reversible+polarity&rft.jtitle=Solid+state+communications&rft.au=Moddel%2C+Garret&rft.au=Zhu%2C+Zixu&rft.au=Grover%2C+Sachit&rft.au=Joshi%2C+Saumil&rft.date=2012-10-01&rft.pub=Elsevier+Ltd&rft.issn=0038-1098&rft.eissn=1879-2766&rft.volume=152&rft.issue=19&rft.spage=1842&rft.epage=1845&rft_id=info:doi/10.1016%2Fj.ssc.2012.06.013&rft.externalDocID=S003810981200381X
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0038-1098&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0038-1098&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0038-1098&client=summon