Moiré engineering in 2D heterostructures with process-induced strain
We report deterministic control over a moiré superlattice interference pattern in twisted bilayer graphene by implementing designable device-level heterostrain with process-induced strain engineering, a widely used technique in industrial silicon nanofabrication processes. By depositing stressed thi...
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Published in | Applied physics letters Vol. 122; no. 14 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Melville
American Institute of Physics
03.04.2023
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Subjects | |
Online Access | Get full text |
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