High-speed noise-immune AlGaAs/GaAs HBT logic for static memory application

The authors evaluate the performance of a new gate topology that gives large logic swings and a high noise margin at low power dissipation. The measured noise margin (43% of the 3-V logic swing) and transfer characteristics for a hybrid inverter using an AlGaAs/GaAs heterojunction bipolar transistor...

Full description

Saved in:
Bibliographic Details
Published inIEEE transactions on electron devices Vol. 38; no. 4; pp. 932 - 934
Main Authors Hagley, W.A., Day, D., Malhi, D.S., Xu, J.M.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.04.1991
Institute of Electrical and Electronics Engineers
Subjects
Applied sciences
Circuit noise
Design. Technologies. Operation analysis. Testing
Diodes
Electronics
Exact sciences and technology
Gallium arsenide
Heterojunction bipolar transistors
Integrated circuits
Inverters
Logic devices
Noise measurement
Noise reduction
Power dissipation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Threshold voltage
Logic circuit
Gallium Arsenides
Measurement
Heterojunction transistor
Aluminium Gallium Arsenides Mixed
Transfer characteristic
Performance
Static storage
Bipolar transistor
Online AccessGet full text

Cover

More Information
Summary:The authors evaluate the performance of a new gate topology that gives large logic swings and a high noise margin at low power dissipation. The measured noise margin (43% of the 3-V logic swing) and transfer characteristics for a hybrid inverter using an AlGaAs/GaAs heterojunction bipolar transistor (HBT) are presented along with simulated data for an integrated device. These simulations lead to a modified structure demonstrating substantially improved transient response and reduced power dissipation (23 ps and 2.1 mW) while maintaining a large noise margin (45% of the 3-V logic swing). Its performance compares favorably with that of emitter coupled logic (ECL).< >
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/16.75227