Improved Oxidation-Induced Ge Condensation Technique Using H + Implantation and Post Annealing for Highly Stress-Relaxed Ultrathin SiGe on Insulator

Saved in:
Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 45; no. 4S; p. 3147
Main Authors Tanaka, Masanori, Tsunoda, Isao, Sadoh, Taizoh, Enokida, Toyotsugu, Ninomiya, Masaharu, Nakamae, Masahiko, Miyao, Masanobu
Format Journal Article
LanguageEnglish
Published 01.04.2006
Online AccessGet full text

Cover

More Information
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.45.3147