A 9-Bit 150-MS/s Subrange ADC Based on SAR Architecture in 90-nm CMOS
This paper presents a 9-bit subrange analog-to-digital converter (ADC) consisting of a 3.5-bit flash coarse ADC, a 6-bit successive-approximation-register (SAR) fine ADC, and a differential segmented capacitive digital-to-analog converter (DAC). The flash ADC controls the thermometer coarse capacito...
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Published in | IEEE transactions on circuits and systems. I, Regular papers Vol. 60; no. 3; pp. 570 - 581 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
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New York
IEEE
01.03.2013
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
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Abstract | This paper presents a 9-bit subrange analog-to-digital converter (ADC) consisting of a 3.5-bit flash coarse ADC, a 6-bit successive-approximation-register (SAR) fine ADC, and a differential segmented capacitive digital-to-analog converter (DAC). The flash ADC controls the thermometer coarse capacitors of the DAC and the SAR ADC controls the binary fine ones. Both theoretical analysis and behavioral simulations show that the differential non-linearity (DNL) of a SAR ADC with a segmented DAC is better than that of a binary ADC. The merged switching of the coarse capacitors significantly enhances overall operation speed. At 150 MS/s, the ADC consumes 1.53 mW from a 1.2-V supply. The effective number of bits (ENOB) is 8.69 bits and the effective resolution bandwidth (ERBW) is 100 MHz. With a 1.3-V supply voltage, the sampling rate is 200 MS/s with 2.2-mW power consumption. The ENOB is 8.66 bits and the ERBW is 100 MHz. The FOMs at 1.3 V and 200 MS/s, 1.2 V and 150 MS/s and 1 V and 100 MS/s are 27.2, 24.7, and 17.7 fJ/conversion-step, respectively. |
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AbstractList | This paper presents a 9-bit subrange analog-to-digital converter (ADC) consisting of a 3.5-bit flash coarse ADC, a 6-bit successive-approximation-register (SAR) fine ADC, and a differential segmented capacitive digital-to-analog converter (DAC). The flash ADC controls the thermometer coarse capacitors of the DAC and the SAR ADC controls the binary fine ones. Both theoretical analysis and behavioral simulations show that the differential non-linearity (DNL) of a SAR ADC with a segmented DAC is better than that of a binary ADC. The merged switching of the coarse capacitors significantly enhances overall operation speed. At 150 MS/s, the ADC consumes 1.53 mW from a 1.2-V supply. The effective number of bits (ENOB) is 8.69 bits and the effective resolution bandwidth (ERBW) is 100 MHz. With a 1.3-V supply voltage, the sampling rate is 200 MS/s with 2.2-mW power consumption. The ENOB is 8.66 bits and the ERBW is 100 MHz. The FOMs at 1.3 V and 200 MS/s, 1.2 V and 150 MS/s and 1 V and 100 MS/s are 27.2, 24.7, and 17.7 fJ/conversion-step, respectively. |
Author | Guan-Ying Huang Soon-Jyh Chang Ya-Ting Shyu Yen-Ting Liu Ying-Zu Lin Chun-Cheng Liu |
Author_xml | – sequence: 1 givenname: Ying-Zu surname: Lin fullname: Lin, Ying-Zu – sequence: 2 givenname: Chun-Cheng surname: Liu fullname: Liu, Chun-Cheng – sequence: 3 givenname: Guan-Ying surname: Huang fullname: Huang, Guan-Ying – sequence: 4 givenname: Ya-Ting surname: Shyu fullname: Shyu, Ya-Ting – sequence: 5 givenname: Yen-Ting surname: Liu fullname: Liu, Yen-Ting – sequence: 6 givenname: Soon-Jyh surname: Chang fullname: Chang, Soon-Jyh |
BookMark | eNpdkE1PwkAQhjcGEwH9AcbLJl68LOzsR3f3WCoqCYTE4rkpy1ZLoMXd9uC_tw3Eg3OZmeR5J5NnhAZVXTmE7oFOAKiZbpJ0MWEU2IQxkEpGV2gIUmpCNY0G_SwM0ZzpGzQKYU8pM5TDEM1jbMisbDBISlbpNOC03fq8-nQ4fk7wLA9uh-sKp_E7jr39Khtnm9Y7XFbYUFIdcbJap7fousgPwd1d-hh9vMw3yRtZrl8XSbwklrOoIbwQeqeVssXWFNtuETzvihpud4VTOVeKWVNoUCLiYBkoDUIrZ3eRVkJxPkZP57snX3-3LjTZsQzWHQ555eo2ZMAjCZwrITr08R-6r1tfdd91FHDGgVLZUXCmrK9D8K7ITr485v4nA5r1YrNebNaLzS5iu8zDOVM65_74SEgjJeO_tGxwAQ |
CODEN | ITCSCH |
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ContentType | Journal Article |
Copyright | Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Mar 2013 |
Copyright_xml | – notice: Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Mar 2013 |
DBID | 97E RIA RIE AAYXX CITATION 7SP 8FD L7M F28 FR3 |
DOI | 10.1109/TCSI.2012.2215756 |
DatabaseName | IEEE All-Society Periodicals Package (ASPP) 2005-present IEEE All-Society Periodicals Package (ASPP) 1998-Present IEEE Electronic Library (IEL) CrossRef Electronics & Communications Abstracts Technology Research Database Advanced Technologies Database with Aerospace ANTE: Abstracts in New Technology & Engineering Engineering Research Database |
DatabaseTitle | CrossRef Technology Research Database Advanced Technologies Database with Aerospace Electronics & Communications Abstracts Engineering Research Database ANTE: Abstracts in New Technology & Engineering |
DatabaseTitleList | Engineering Research Database Technology Research Database |
Database_xml | – sequence: 1 dbid: RIE name: IEEE Electronic Library (IEL) url: https://proxy.k.utb.cz/login?url=https://ieeexplore.ieee.org/ sourceTypes: Publisher |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering Architecture |
EISSN | 1558-0806 |
EndPage | 581 |
ExternalDocumentID | 2903608111 10_1109_TCSI_2012_2215756 6459552 |
Genre | orig-research |
GroupedDBID | 0R~ 29I 4.4 5VS 6IK 97E AAJGR AASAJ ABQJQ ABVLG ACIWK AETIX AIBXA AKJIK ALMA_UNASSIGNED_HOLDINGS ATWAV BEFXN BFFAM BGNUA BKEBE BPEOZ EBS EJD HZ~ H~9 IFIPE IPLJI JAVBF M43 O9- OCL PZZ RIA RIE RIG RNS VJK XFK AAYXX CITATION 7SP 8FD L7M F28 FR3 |
ID | FETCH-LOGICAL-c326t-3f48d877cfb9fbf4843aaaa093cdfe7a3772c9f8174631c21781487ecd6874733 |
IEDL.DBID | RIE |
ISSN | 1549-8328 |
IngestDate | Fri Aug 16 04:04:28 EDT 2024 Fri Sep 13 08:00:40 EDT 2024 Fri Aug 23 01:04:29 EDT 2024 Wed Jun 26 19:28:04 EDT 2024 |
IsPeerReviewed | true |
IsScholarly | true |
Issue | 3 |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-LOGICAL-c326t-3f48d877cfb9fbf4843aaaa093cdfe7a3772c9f8174631c21781487ecd6874733 |
Notes | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
PQID | 1313231005 |
PQPubID | 85411 |
PageCount | 12 |
ParticipantIDs | crossref_primary_10_1109_TCSI_2012_2215756 proquest_miscellaneous_1365133744 ieee_primary_6459552 proquest_journals_1313231005 |
PublicationCentury | 2000 |
PublicationDate | 2013-03-01 |
PublicationDateYYYYMMDD | 2013-03-01 |
PublicationDate_xml | – month: 03 year: 2013 text: 2013-03-01 day: 01 |
PublicationDecade | 2010 |
PublicationPlace | New York |
PublicationPlace_xml | – name: New York |
PublicationTitle | IEEE transactions on circuits and systems. I, Regular papers |
PublicationTitleAbbrev | TCSI |
PublicationYear | 2013 |
Publisher | IEEE The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher_xml | – name: IEEE – name: The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
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References_xml | – ident: ref7 doi: 10.1109/TCSII.2010.2050937 – ident: ref2 doi: 10.1109/JSSC.1975.1050630 – ident: ref1 doi: 10.1109/JSSC.1975.1050629 – ident: ref17 doi: 10.1109/4.760369 – volume: 33 start-page: 1948 year: 1998 ident: ref21 article-title: A 10-b, 500-MSample/s CMOS DAC in 0.6 mm<formula formulatype="inline"><tex Notation="TeX">$^{2}$</tex></formula> publication-title: IEEE J Solid-State Circuits doi: 10.1109/4.735535 contributor: fullname: lin – start-page: 380 year: 2010 ident: ref9 article-title: A 12 b 22.5/45 MS/s 3.0 mW 0.059 mm<formula formulatype="inline"> <tex Notation="TeX">$^{2}$</tex></formula> CMOS SAR ADC achieving over 90 dB SFDR publication-title: IEEE ISSCC Dig Tech Papers contributor: fullname: liu – volume: 55 start-page: 668 year: 2008 ident: ref20 article-title: A 1-V 1.25-GS/S 8-bit self-calibrated flash ADC in 90-nm digital CMOS publication-title: IEEE Tran Circuits Syst II Exp Briefs doi: 10.1109/TCSII.2008.921596 contributor: fullname: wang – start-page: 568 year: 2006 ident: ref22 article-title: A 90 nm CMOS 1.2 V 6 b 1 GS/s two-step subranging ADC publication-title: IEEE ISSCC Dig Tech Papers contributor: fullname: figueiredo – start-page: 574 year: 2006 ident: ref10 article-title: A 6 b 600 MS/s 5.3 mW asynchronous ADC in 0.13 <formula formulatype="inline"><tex Notation="TeX">$\mu$</tex> </formula>m CMOS publication-title: IEEE ISSCC Dig Tech Papers contributor: fullname: chen – start-page: 386 year: 2010 ident: ref15 article-title: A 10 b 100 MS/s 1.13 mW SAR ADC with binary scaled error compensation publication-title: IEEE ISSCC Dig Tech Papers contributor: fullname: liu – ident: ref4 doi: 10.1109/JSSC.2007.892169 – ident: ref19 doi: 10.1109/TCSI.2003.822415 – volume: 57 start-page: 502 year: 2010 ident: ref6 article-title: A 9-bit 80 MS/s successive approximation register analog-to-digital converter with a capacitor reduction technique publication-title: IEEE Trans Circuits Syst II Exp Briefs doi: 10.1109/TCSII.2010.2048387 contributor: fullname: cho – ident: ref11 doi: 10.1109/TBCAS.2010.2081362 – start-page: 246 year: 2007 ident: ref12 article-title: A 65 fJ/conversion-step 0-to-50 MS/s 0-to-0.7 mW 9 b charge-sharing SAR ADC in 90 nm digital CMOS publication-title: IEEE ISSCC Dig Tech Papers contributor: fullname: craninckx – ident: ref5 doi: 10.1109/JSSC.2007.905237 – start-page: 238 year: 2008 ident: ref8 article-title: An 820 <formula formulatype="inline"><tex Notation="TeX">$\mu$</tex></formula>W 9b 40 MS/s noise-tolerant dynamic-SAR ADC in 90 nm digital CMOS publication-title: IEEE ISSCC Dig Tech Papers contributor: fullname: giannini – ident: ref18 doi: 10.1109/TCSI.2008.916613 – ident: ref3 doi: 10.1109/JSSC.2010.2042254 – ident: ref13 doi: 10.1109/ISSCC.2008.4523151 – ident: ref23 doi: 10.1109/4.121557 – start-page: 176 year: 2002 ident: ref14 article-title: A 1.2-V 10-b 20-Msample/s nonbinary successive approximation ADC in 0.13 <formula formulatype="inline"><tex Notation="TeX">$\mu$</tex> </formula>m CMOS publication-title: IEEE ISSCC Dig Tech Papers contributor: fullname: kuttner – ident: ref16 doi: 10.1109/VLSIC.2010.5560246 |
SSID | ssj0029031 |
Score | 2.3445907 |
Snippet | This paper presents a 9-bit subrange analog-to-digital converter (ADC) consisting of a 3.5-bit flash coarse ADC, a 6-bit successive-approximation-register... |
SourceID | proquest crossref ieee |
SourceType | Aggregation Database Publisher |
StartPage | 570 |
SubjectTerms | Accuracy Architecture Ash Capacitance Capacitors Consumption Control equipment Electric potential Flash ADC hybrid ADC Logic gates Nonlinearity Sampling SAR ADC Studies subrange ADC Switches Synthetic aperture radar Transistors two-step ADC |
Title | A 9-Bit 150-MS/s Subrange ADC Based on SAR Architecture in 90-nm CMOS |
URI | https://ieeexplore.ieee.org/document/6459552 https://www.proquest.com/docview/1313231005/abstract/ https://search.proquest.com/docview/1365133744 |
Volume | 60 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV3dS8MwED_UJ33wW5xOieCTmK1t0rR57KaiwhScgm-lSVMQsRPtXvzrvWu7MdQH-9TSEEIu95W7-x3AaeZ5xhpkJKWLmEC1DY9tlPFAB0Zaq1zkqDh5dKeun-Ttc_i8BOfzWhjnXJ185nr0Wsfy84md0lVZn4BPwhAF7nLsBU2t1ty50p5osFGl5nhK4zaC6Xu6_zgc31ASV9ALUMFF1Kt6QQfVTVV-SeJavVxtwGi2sCar5LU3rUzPfv3AbPzvyjdhvbUzWdIcjC1YcuU2rC2gD-7AZcI0H7xUDK01Phr3PxlKkQ8qNmDJxZANUL_lbFKycfLAkoV4A3spmfZ4-caGo_vxLjxdXT4Or3nbVYFbNNUqLgoZ53EU2cLowuCHFBk-nhY2L1yUCbS3LRIOXRUlfIsuS4wuE5IsVzH6HkLswUo5Kd0-MJ3hlCaUyneBVEYYoRSBzUib5dZavwNns31O3xvwjLR2OjydElFSIkraEqUDO7Rv84HtlnWgO6NM2rLXZ-oT4CSFJsIOnMx_I2NQtCMr3WRKYxT1romkPPh75kNYDereFpRQ1oWV6mPqjtDCqMxxfbS-AeLmyCQ |
link.rule.ids | 315,786,790,802,27957,27958,55109 |
linkProvider | IEEE |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1LT-MwEB4hOMAeeK8oTyPtCeE2jR0nPoYCKo-w0rZI3KLYcSSESBGkF349M0laVcseNqdEsSxrZuyZ8cx8A_Ar8zxjDW4kpYuIQLUNj2yYcV_7RlqrXOioODl5UMNHefsUPC3B-bwWxjlXJ5-5Lr3Wsfx8Yqd0VdYj4JMgwAN3BfW8p5tqrbl7pT3RoKNKzVFOozaGiQN748HohtK4_K6PKi6kbtULWqhuq_LtLK4VzPUGJLOlNXklL91pZbr28y_Uxv9d-yast5YmixvR2IIlV27DjwX8wR24ipnmF88VQ3uNJ6PeB8Nz5J3KDVh8OWAXqOFyNinZKP7D4oWIA3sumfZ4-coGye_RLjxeX40HQ972VeAWjbWKi0JGeRSGtjC6MPghRYaPp4XNCxdmAi1ui6xDZ0WJvkWnJUKnCZmWqwi9DyF-wnI5Kd0eMJ3hlCaQqu98qYwwQimCm5E2y621_Q6czeicvjXwGWntdng6JaakxJS0ZUoHdohu84EtyTpwOONM2m6wj7RPkJMUnAg6cDr_jVuD4h1Z6SZTGqOoe00o5f6_Zz6B1eE4uU_vbx7uDmDNrztdUHrZISxX71N3hPZGZY5rMfsCpuzLeg |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=A+9-Bit+150-MS%2Fs+Subrange+ADC+Based+on+SAR+Architecture+in+90-nm+CMOS&rft.jtitle=IEEE+transactions+on+circuits+and+systems.+I%2C+Regular+papers&rft.au=Lin%2C+Ying-Zu&rft.au=Liu%2C+Chun-Cheng&rft.au=Huang%2C+Guan-Ying&rft.au=Shyu%2C+Ya-Ting&rft.date=2013-03-01&rft.issn=1549-8328&rft.eissn=1558-0806&rft.volume=60&rft.issue=3&rft.spage=570&rft.epage=581&rft_id=info:doi/10.1109%2FTCSI.2012.2215756&rft.externalDBID=NO_FULL_TEXT |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=1549-8328&client=summon |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=1549-8328&client=summon |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=1549-8328&client=summon |