Phonon-assisted transport in van der Waals heterostructure tunnel devices

• Published in: Solid-state electronics Vol. 194; p. 108344
• Main Authors: M'foukh, A., Saint-Martin, J., Dollfus, P., Pala, M.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.08.2022; Elsevier
• Subjects: Condensed Matter; DFT; Electron-phonon interaction; Engineering Sciences; Materials Science; Mesoscopic Systems and Quantum Hall Effect; Micro and nanotechnologies; Microelectronics; Non equilibrium Green’s function; Physics; Tunnel FET; Van der Waals heterostructure; Van der Waals heterostructure; Electron-phonon interaction; DFT; Tunnel FET; Non equilibrium Green’s function

•A theoretical study of dissipative transport in vdW TFETs has been addressed thanks to a full ab-initio model.•The results suggest that vdW TFETs are significantly affected by phonon scattering due to the large coupling of electrons with polar phonons.•However, they remain a promising option for th...