Factors Affecting the Performance of HJT Silicon Solar Cells in the Intrinsic and Emitter Layers: A Review
Recently, the focus of solar cell research has shifted from Passivated Emitter and Rear Cell and Passivated Emitter and Rear Locally-diffused solar cells to Heterojunction with Intrinsic Thin Layer solar cells. Compared to the already mass-produced Passivated Emitter and Rear Cell and Passivated Emi...
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| Published in | Transactions on electrical and electronic materials Vol. 24; no. 2; pp. 123 - 131 |
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| Main Authors | , , , , , |
| Format | Journal Article |
| Language | English |
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Seoul
The Korean Institute of Electrical and Electronic Material Engineers (KIEEME)
01.04.2023
한국전기전자재료학회 |
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| Abstract | Recently, the focus of solar cell research has shifted from Passivated Emitter and Rear Cell and Passivated Emitter and Rear Locally-diffused solar cells to Heterojunction with Intrinsic Thin Layer solar cells. Compared to the already mass-produced Passivated Emitter and Rear Cell and Passivated Emitter and Rear Locally-diffused solar cells, the passivation with the intrinsic thin layer of amorphous on the wafer surface, the continuous improvement of the emitter thickness, and doping concentration have enabled Heterojunction with Intrinsic Thin Layer solar cells to obtain open-circuit voltage above 750 mV while maintaining a short circuit current density of ~ 40 mA/cm
2
and an Fill Factor of ~ 84%. This leads to a theoretical conversion efficiency of 27.5% (monolithic) to 29% (tandem), which is much higher than the theoretical final conversion efficiency of ~ 24.5% achieved by Passivated Emitter and Rear Cell and Passivated Emitter and Rear Locally-diffused solar cells at a short-circuit voltage of 706 mV. To further approach the theoretical maximum efficiency, improvements, and optimization of the fabrication process, as well as change in material of the front emitter layer and thus the band gap, conductivity, and defect density can be adopted. Efficiencies of up to 28.27% were achieved using hydrogenated nanocrystalline silicon with a bandgap of 1.9 eV as the emitter layer. |
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| AbstractList | Recently, the focus of solar cell research has shifted from Passivated Emitter and Rear Cell and Passivated Emitter and Rear Locally-diffused solar cells to Heterojunction with Intrinsic Thin Layer solar cells. Compared to the already mass-produced Passivated Emitter and Rear Cell and Passivated Emitter and Rear Locally-diffused solar cells, the passivation with the intrinsic thin layer of amorphous on the wafer surface, the continuous improvement of the emitter thickness, and doping concentration have enabled Heterojunction with Intrinsic Thin Layer solar cells to obtain open-circuit voltage above 750 mV while maintaining a short circuit current density of ~ 40 mA/cm
2
and an Fill Factor of ~ 84%. This leads to a theoretical conversion efficiency of 27.5% (monolithic) to 29% (tandem), which is much higher than the theoretical final conversion efficiency of ~ 24.5% achieved by Passivated Emitter and Rear Cell and Passivated Emitter and Rear Locally-diffused solar cells at a short-circuit voltage of 706 mV. To further approach the theoretical maximum efficiency, improvements, and optimization of the fabrication process, as well as change in material of the front emitter layer and thus the band gap, conductivity, and defect density can be adopted. Efficiencies of up to 28.27% were achieved using hydrogenated nanocrystalline silicon with a bandgap of 1.9 eV as the emitter layer. Recently, the focus of solar cell research has shifted from Passivated Emitter and Rear Cell and Passivated Emitter and Rear Locally-diffused solar cells to Heterojunction with Intrinsic Thin Layer solar cells. Compared to the already mass-produced Passivated Emitter and Rear Cell and Passivated Emitter and Rear Locally-diffused solar cells, the passivation with the intrinsic thin layer of amorphous on the wafer surface, the continuous improvement of the emitter thickness, and doping concentration have enabled Heterojunction with Intrinsic Thin Layer solar cells to obtain open-circuit voltage above 750 mV while maintaining a short circuit current density of ~ 40 mA/cm2 and an Fill Factor of ~ 84%. This leads to a theoretical conversion efficiency of 27.5% (monolithic) to 29% (tandem), which is much higher than the theoretical final conversion efficiency of ~ 24.5% achieved by Passivated Emitter and Rear Cell and Passivated Emitter and Rear Locally-diffused solar cells at a short-circuit voltage of 706 mV. To further approach the theoretical maximum efficiency, improvements, and optimization of the fabrication process, as well as change in material of the front emitter layer and thus the band gap, conductivity, and defect density can be adopted. Efficiencies of up to 28.27% were achieved using hydrogenated nanocrystalline silicon with a bandgap of 1.9 eV as the emitter layer. KCI Citation Count: 0 |
| Author | Khokhar, Muhammad Quddamah Yi, Junsin Kim, Youngkuk Fan, Xinyi Rabelo, Matheus Hu, Yifan |
| Author_xml | – sequence: 1 givenname: Xinyi surname: Fan fullname: Fan, Xinyi organization: Interdisciplinary Program in Photovoltaic System Engineering, Sungkyunkwan University – sequence: 2 givenname: Matheus surname: Rabelo fullname: Rabelo, Matheus organization: Interdisciplinary Program in Photovoltaic System Engineering, Sungkyunkwan University – sequence: 3 givenname: Yifan surname: Hu fullname: Hu, Yifan organization: Department of Electrical and Computer Engineering, Sungkyunkwan University – sequence: 4 givenname: Muhammad Quddamah surname: Khokhar fullname: Khokhar, Muhammad Quddamah organization: Department of Electrical and Computer Engineering, Sungkyunkwan University – sequence: 5 givenname: Youngkuk surname: Kim fullname: Kim, Youngkuk organization: College of Information and Communication Engineering, Sungkyunkwan University – sequence: 6 givenname: Junsin orcidid: 0000-0002-6196-0035 surname: Yi fullname: Yi, Junsin email: junsin@skku.edu organization: Department of Electrical and Computer Engineering, Sungkyunkwan University, College of Information and Communication Engineering, Sungkyunkwan University |
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| Cites_doi | 10.1007/s10825-020-01626-y 10.1063/1.4885501 10.1039/C6RA26342A 10.1109/IranianCEE.2019.8786742 10.1002/solr.201700021 10.3390/ma6115440 10.7567/JJAPS.15S1.35 10.1063/1.91174 10.1016/j.solmat.2008.02.037 10.1016/j.tsf.2005.07.196 10.1109/JPHOTOV.2017.2762592 10.1038/nenergy.2017.32 10.1007/978-3-642-22275-7_15 10.1002/pip.2959 10.1109/JPHOTOV.2014.2358377 10.1007/s42341-018-0026-8 10.1109/JPHOTOV.2013.2282737 10.1109/PVSC40753.2019.8980566 10.1016/0038-1098(75)90284-7 10.1109/JPHOTOV.2012.2209407 10.1016/j.solmat.2018.06.020 10.1063/1.4937224 10.1016/j.apenergy.2017.12.041 10.1002/(SICI)1099-159X(199911/12)7:6<471::AID-PIP298>3.0.CO;2-7 10.1109/NUSOD.2007.4349021 10.1088/1361-6463/aaac6d 10.1016/0927-0248(94)90054-X 10.1109/JPHOTOV.2014.2352151 10.1002/pip.3506 10.1088/1361-6595/abb7bd 10.1063/1.3284650 10.1039/D0GC03994B 10.1016/j.solmat.2017.05.042 10.1109/JPHOTOV.2014.2350695 10.1063/1.2857465 10.1063/1.5049296 10.1016/j.jnoncrysol.2006.02.028 10.1063/1.3641899 10.1109/WCPEC.2006.279743 10.1016/j.solmat.2017.06.024 10.1103/PhysRevLett.49.1187 10.1016/j.apsusc.2018.04.215 10.1002/pssc.200982778 10.1002/pip.2400 10.1088/1674-1056/27/3/038502 10.1016/j.egypro.2011.06.122 10.1002/pip.892 10.1002/pip.1032 |
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| Keywords | Solar cell Emitter HJT Surface passivation a-Si |
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| References | ZhaoJHWangAHGreenMAProg. Photovolt. Res. Appl.1999764714741:CAS:528:DC%2BD3cXotVCmsA%3D%3D10.1002/(SICI)1099-159X(199911/12)7:6<471::AID-PIP298>3.0.CO;2-7 HaaseFSchäferSKlamtCKieferFKrügenerJBrendelRPeibstRIEEE J. Photovolt.201781232910.1109/JPHOTOV.2017.2762592 Energy, U.S.D.o. and S.E.R.I.S.E.R. Division. U.S. Photovoltaic Patents: 1951–1987. 1988, Solar Energy Research Institute. ZhangQZhuMLiuFSolar Cell2006200644041 LinHDuanKMaLPhoton. Laser2002135460464 M. Lu, S. Bowden, R. Birkmire, 2007 Int. Conf. Numerical Simulation of Optoelectronic Devices. IEEE, 2007, 55–56, (2017) RichterABenickJFeldmannFFellAHermleMGlunzSWSol. Energy Mater. Sol. Cells2017179610510.1016/j.solmat.2017.05.042 GudmundssonJTPlasma Sources Sci. Technol.202029111:CAS:528:DC%2BB3MXisVSntbk%3D10.1088/1361-6595/abb7bd J. Zhao, A. Wang, M. A. Green, Prog. Photovolt.: Res. Appl. 1999, 7(6), 471–474, (1999) LuMDasUBowdenSHegedusSBirkmireR34th IEEE Photovolt. Specialists Conf. (PVSC) IEEE20092009001475001480 MatsushitaTAokiTOtsuTYamotoHHayashiHOkayamaMKawanaYJpn. J. Appl. Phys.197615S13510.7567/JJAPS.15S1.35 MhamdiEMEHolovskyJDemaurexBBallifCWolfSDAppl. Phys. Lett.20141042525210810.1063/1.4885501 MasukoKShigematsuMHashiguchiTFujishimaDKaiMYoshimuraNYamaguchiTIchihashiYMishimaTMatsubaraNYamanishiTTakahamaTTaguchiMMaruyamaEOkamotoSIEEE J. Photovolt.2014461433143510.1109/JPHOTOV.2014.2352151 DescoeudresABarraudLStefaanDeWolfStrahmBLachenalDGuérinCHolmanZCZicarelliFDemaurexBSeifJHolovskyJBallifCAppl. Phys. Lett.2011991212350610.1063/1.3641899 GuoWZhangLBaoJMengFChenYFengZLiuZOpt. J.201520156374381 SmithDDCousinsPWesterbergSJesus-TabajondaRDAnieroGShenYIEEE Journal of Photovoltaics2014461465146910.1109/JPHOTOV.2014.2350695 AdachiDHernándezJLYamamotoKAppl. Phys. Lett.20151072310.1063/1.4937224 KanneboinaVJ. Comput. Electron.20212013443521:CAS:528:DC%2BB3cXisVWjur%2FJ10.1007/s10825-020-01626-y ZhangYYuCYangMHeYZhangLZhangJXuXZhangYSongXYanHRSC Adv.2017715925892631:CAS:528:DC%2BC2sXhslSms7g%3D10.1039/C6RA26342A PernýMŠályVJaníčekFMikolásekMVáryMHuranJJ. Electr. Eng.20186915257 HaaseFHollemannCSchäferSMerkleARienäckerMKrügenerJBrendelaRPeibstRSol. Energy Mater. Sol. Cells20181861841931:CAS:528:DC%2BC1cXht1ertrbE10.1016/j.solmat.2018.06.020 Wang Q, Workshop on Photovoltaic Materials Durability. Gaithersburg, MD USA, 12–13, (2019) LewisAJConnellGANPaulWPawlikJRTemkinRJAIP conference proceedingsAm. Inst. Phys.197420127321:CAS:528:DyaE2MXhtVGjsg%3D%3D SpearaWELe ComberaPGSolid State Commun.19751791193119610.1016/0038-1098(75)90284-7 HuangHTianGZhouLYuanJFahrnerWRZhangWLiXChenWLiuRChin. Phys. B201827310.1088/1674-1056/27/3/038502 GreenMAProg. Photovolt. Res. Appl.20091731831891:CAS:528:DC%2BD1MXmtVSms7k%3D10.1002/pip.892 DelavaranHShahhoseiniA2019 27th Iranian Conf. Electr. Eng. (ICEE) IEEE20192019364010.1109/IranianCEE.2019.8786742 TaguchiMYanoATohodaSMatsuyamaKNakamuraYNishiwakiTFujitaKMaruyamaEIEEE J. Photovolt.201341969910.1109/JPHOTOV.2013.2282737 ChenDPZhaoLLiHLZhouCLWangWJTrans Tech Publ. Ltd20146721320 HishikawaYIsomuraMOkamotoSHashimotoHTsudaSSol. Energy Mater. Sol. Cells1994341–43033121:CAS:528:DyaK2cXmsF2lsrw%3D10.1016/0927-0248(94)90054-X Q. Zhang, M. Zhu, F. Liu and Y. Zhou, Semicond. J., 28(1), (2007) YoshikawaKKawasakiHYoshidaWIrieTKonishiKNakanoKUtoTAdachiDKanematsuMUzuHYamamotoKSol. Energy Mater. Sol. Cells201717337421:CAS:528:DC%2BC2sXhtVKhtL%2FO10.1016/j.solmat.2017.06.024 M. Lu, S. Bowden, U. Das and R. Birkmire, 17th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes. 2007, 286, (2007) StreetRAPhys. Rev. Lett.1982491611871:CAS:528:DyaL38XlvFWltb0%3D10.1103/PhysRevLett.49.1187 WangTHIwaniczkoEPageMRLeviDHYanYBranzHMWangQThin Solid Films20065011–22842871:CAS:528:DC%2BD28XhsFyjtrc%3D10.1016/j.tsf.2005.07.196 ChavaliRVKWolfSDAlamMAProg. Photovolt. Res. Appl.20182642412601:CAS:528:DC%2BC1cXlslGkt74%3D10.1002/pip.2959 LiuJYaoYXiaoSGuXJ. Phys. D Appl. Phys.2018511210.1088/1361-6463/aaac6d DasUKBurrowsMZLuMBowdenSBirkmireRWAppl. Phys. Lett.200892610.1063/1.2857465 LuMDasUBowdenSHegedusSBirkmireR2008 33rd IEEE Photovolt. Specialists Conf. IEEE2008200815 YouHZhangCChin. Phys. B2018181349 W. Z. Shen, and Z. P. Li, Beijing: Science, 2–6, (2014) SasakiMOkamotoSHishikawaYTsudaSNakanoSSol. Energy Mater. Sol. Cells1944341–4541547 GreenMADunlopEDHohl-EbingerJYoshitaMKopidakisNHaoXProg. Photovolt.202130131210.1002/pip.3506 HsiehYKauLHuangHLeeCFuhYLiTT2018 China Semicond. Technol. Int. Conf. (CSTIC) IEEE2018201815 SunQHuZLiaoHLinJAnJZhuXJ. Yunnan Normal Univ.: Nat. Sci. Edition20123223538 StangJFranssenTHaschkeJMewsMMerkleAPeibstRRechBKorteLSolar RRL201713–4170002110.1002/solr.201700021 H. Delavaran, A. Shahhoseini, 2019 27th Iranian Conf. Electr. Eng.(ICEE). IEEE, 2019, 36–40, (2019) M. Bivour, M. Rüdiger, C. Reichel, Kurt-U.Ritzau, M. Hermle and Stefan W. Glunz, Energy Proc., 8, 185–192, (2011) TsunomuraYYoshimineYTaguchiMBabaTKinoshitaTKannoHSakataHMaruyamaETanakaMSol. Energy Mater. Sol. Cells2009936–76706731:CAS:528:DC%2BD1MXls12nt78%3D10.1016/j.solmat.2008.02.037 ShuZDasUAllenJBirkmireRHegedusSProg. Photovolt. Res. Appl.201523178931:CAS:528:DC%2BC2cXitFahtLjE10.1002/pip.2400 GongYHuangHGaoJZhouLSolar Energy J.20153635295331:CAS:528:DC%2BC1MXhsVGgtLzK MaruyamaETerakawaATaguchiMYoshimineYIdeDBabaTShimaMSakataHTanakaM2006 IEEE 4th World Conf. Photovolt. Energy Conf. IEEE200621455146010.1109/WCPEC.2006.279743 LiangJLiuQLiTLuoYLuSShiXZhangFAsiriAMSunXGreen Chem.2021238283428671:CAS:528:DC%2BB3MXlslSruro%3D10.1039/D0GC03994B WeiCLinCHsiaoHYangPWangCPanYMaterials20136115440544610.3390/ma6115440 MandalAWadibhasmeNKumbharAGhaisasSVDusaneROAIP Conf. Proc. AIP Publ. LLC20181999110.1063/1.5049296 XuYHuZDiaoHCaiYZhangSZengXHaoHLiaoXFortunatoEMartinsRJ. Non-Cryst. Solids20063529–20197219751:CAS:528:DC%2BD28Xltl2rsr0%3D10.1016/j.jnoncrysol.2006.02.028 SunXKhanMRAlamaMAAppl. Energy20182121601161010.1016/j.apenergy.2017.12.041 HeYHuangHZhouLNingWYuanJLiDFunct. Mater.2015462222067220701:CAS:528:DC%2BC1MXitlGmu7vE SubjalearndeeNHegemannDAmbergMHanselmannBRupperPIntasantaVAppl. Surf. Sci.20184523063131:CAS:528:DC%2BC1cXpvFGntr4%3D10.1016/j.apsusc.2018.04.215 DioufDKleiderJPDesruesTRibeyronPJPhys. Status Solidic201073–4103310361:CAS:528:DC%2BC3cXlsFels7w%3D10.1002/pssc.200982778 D. Diouf, J. P. Kleider and C. Longeaud, Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells. Springer, Berlin, Heidelberg, 2012, 483-519, (2012) NakamuraJAsanoNHiedaTOkamotoCKatayamaHNakamuraKIEEE J. Photovolt.2014461491149510.1109/JPHOTOV.2014.2358377 GlunzSWFeldmannFRitcherABivourMSteinkemperHBenickJHermleMProceedings of the 31st European Photovoltaic Solar Energy Conference and Exhibition München WIP20152015259263 DescoeudresAHolmanZCBarraudLMorelSWolfSDBallifCIEEE J. Photovolt.201331838910.1109/JPHOTOV.2012.2209407 ParkHLeeYParkJKimYYiJLeeYKimSParkCLimKTrans. Electr. Electron. Mater.201819316517210.1007/s42341-018-0026-8 JumaaKHadiSANayfehA2019 IEEE 46th Photovolt. Spec. Conf. (PVSC) IEEE201920191909191210.1109/PVSC40753.2019.8980566 MatsushitaTOh-uchiNHayashiHYamotoHAppl. Phys. Lett.19793575495501:CAS:528:DyaE1MXmtVejtbY%3D10.1063/1.91174 LuMDasUBowdenSHegedusSBirkmireRProg. Photovolt. Res. Appl.20111933263381:CAS:528:DC%2BC3MXksFemtLk%3D10.1002/pip.1032 WangQPageMRIwaniczkoEXuYRoybalLBauerRToBYuanHCDudaAHasoonFYanYFLeviDMeierDBranzHMWangTHAppl. Phys. Lett.201096110.1063/1.3284650 YoshikawaKKawasakiHYoshidaWIrieTKonishiKNakanoKUtoTAdachiDKanematsuMUzuHYamamotoKNat. Energy2017251810.1038/nenergy.2017.32 H Lin (427_CR20) 2002; 13 T Matsushita (427_CR6) 1979; 35 Q Zhang (427_CR60) 2006; 2006 Q Wang (427_CR61) 2010; 96 J Nakamura (427_CR64) 2014; 4 Y Hishikawa (427_CR22) 1994; 34 Y Hsieh (427_CR36) 2018; 2018 K Jumaa (427_CR32) 2019; 2019 J Stang (427_CR17) 2017; 1 DD Smith (427_CR54) 2014; 4 UK Das (427_CR24) 2008; 92 T Matsushita (427_CR5) 1976; 15 M Lu (427_CR46) 2011; 19 427_CR69 H Delavaran (427_CR15) 2019; 2019 427_CR1 427_CR62 Z Shu (427_CR47) 2015; 23 H You (427_CR34) 2018; 18 JT Gudmundsson (427_CR28) 2020; 29 J Liang (427_CR29) 2021; 23 SW Glunz (427_CR66) 2015; 2015 H Huang (427_CR67) 2018; 27 J Liu (427_CR68) 2018; 51 WE Speara (427_CR8) 1975; 17 E Maruyama (427_CR11) 2006; 2 Y Tsunomura (427_CR12) 2009; 93 MA Green (427_CR70) 2021; 30 Y Xu (427_CR38) 2006; 352 X Sun (427_CR16) 2018; 212 Y Gong (427_CR35) 2015; 36 M Taguchi (427_CR19) 2013; 4 427_CR50 427_CR52 RA Street (427_CR9) 1982; 49 427_CR10 A Mandal (427_CR33) 2018; 1999 Y Zhang (427_CR40) 2017; 7 N Subjalearndee (427_CR23) 2018; 452 D Diouf (427_CR44) 2010; 7 M Sasaki (427_CR21) 1944; 34 M Lu (427_CR51) 2009; 2009 AJ Lewis (427_CR7) 1974; 20 D Adachi (427_CR65) 2015; 107 K Masuko (427_CR53) 2014; 4 427_CR48 Q Sun (427_CR18) 2012; 32 V Kanneboina (427_CR43) 2021; 20 EME Mhamdi (427_CR26) 2014; 104 JH Zhao (427_CR3) 1999; 7 427_CR42 C Wei (427_CR30) 2013; 6 427_CR45 Y He (427_CR37) 2015; 46 A Descoeudres (427_CR63) 2013; 3 MA Green (427_CR4) 2009; 17 W Guo (427_CR31) 2015; 2015 TH Wang (427_CR27) 2006; 501 DP Chen (427_CR2) 2014; 672 K Yoshikawa (427_CR59) 2017; 173 K Yoshikawa (427_CR58) 2017; 2 427_CR39 RVK Chavali (427_CR13) 2018; 26 M Lu (427_CR49) 2008; 2008 A Descoeudres (427_CR25) 2011; 99 H Park (427_CR14) 2018; 19 A Richter (427_CR55) 2017; 17 M Perný (427_CR41) 2018; 69 F Haase (427_CR57) 2018; 186 F Haase (427_CR56) 2017; 8 |
| References_xml | – volume: 20 start-page: 344 issue: 1 year: 2021 ident: 427_CR43 publication-title: J. Comput. Electron. doi: 10.1007/s10825-020-01626-y contributor: fullname: V Kanneboina – volume: 2008 start-page: 1 year: 2008 ident: 427_CR49 publication-title: 2008 33rd IEEE Photovolt. Specialists Conf. IEEE contributor: fullname: M Lu – volume: 104 start-page: 252108 issue: 25 year: 2014 ident: 427_CR26 publication-title: Appl. Phys. Lett. doi: 10.1063/1.4885501 contributor: fullname: EME Mhamdi – volume: 7 start-page: 9258 issue: 15 year: 2017 ident: 427_CR40 publication-title: RSC Adv. doi: 10.1039/C6RA26342A contributor: fullname: Y Zhang – volume: 13 start-page: 460 issue: 5 year: 2002 ident: 427_CR20 publication-title: Photon. Laser contributor: fullname: H Lin – volume: 2015 start-page: 374 issue: 6 year: 2015 ident: 427_CR31 publication-title: Opt. J. contributor: fullname: W Guo – ident: 427_CR42 doi: 10.1109/IranianCEE.2019.8786742 – ident: 427_CR10 – volume: 672 start-page: 13 year: 2014 ident: 427_CR2 publication-title: Trans Tech Publ. Ltd contributor: fullname: DP Chen – volume: 1 start-page: 1700021 issue: 3–4 year: 2017 ident: 427_CR17 publication-title: Solar RRL doi: 10.1002/solr.201700021 contributor: fullname: J Stang – volume: 6 start-page: 5440 issue: 11 year: 2013 ident: 427_CR30 publication-title: Materials doi: 10.3390/ma6115440 contributor: fullname: C Wei – volume: 15 start-page: 35 issue: S1 year: 1976 ident: 427_CR5 publication-title: Jpn. J. Appl. Phys. doi: 10.7567/JJAPS.15S1.35 contributor: fullname: T Matsushita – volume: 35 start-page: 549 issue: 7 year: 1979 ident: 427_CR6 publication-title: Appl. Phys. Lett. doi: 10.1063/1.91174 contributor: fullname: T Matsushita – volume: 32 start-page: 35 issue: 2 year: 2012 ident: 427_CR18 publication-title: J. Yunnan Normal Univ.: Nat. Sci. Edition contributor: fullname: Q Sun – volume: 93 start-page: 670 issue: 6–7 year: 2009 ident: 427_CR12 publication-title: Sol. Energy Mater. Sol. Cells doi: 10.1016/j.solmat.2008.02.037 contributor: fullname: Y Tsunomura – volume: 2019 start-page: 36 year: 2019 ident: 427_CR15 publication-title: 2019 27th Iranian Conf. Electr. Eng. (ICEE) IEEE doi: 10.1109/IranianCEE.2019.8786742 contributor: fullname: H Delavaran – volume: 501 start-page: 284 issue: 1–2 year: 2006 ident: 427_CR27 publication-title: Thin Solid Films doi: 10.1016/j.tsf.2005.07.196 contributor: fullname: TH Wang – volume: 8 start-page: 23 issue: 1 year: 2017 ident: 427_CR56 publication-title: IEEE J. Photovolt. doi: 10.1109/JPHOTOV.2017.2762592 contributor: fullname: F Haase – volume: 2 start-page: 1 issue: 5 year: 2017 ident: 427_CR58 publication-title: Nat. Energy doi: 10.1038/nenergy.2017.32 contributor: fullname: K Yoshikawa – volume: 36 start-page: 529 issue: 3 year: 2015 ident: 427_CR35 publication-title: Solar Energy J. contributor: fullname: Y Gong – ident: 427_CR45 doi: 10.1007/978-3-642-22275-7_15 – volume: 2006 start-page: 40 issue: 4 year: 2006 ident: 427_CR60 publication-title: Solar Cell contributor: fullname: Q Zhang – volume: 26 start-page: 241 issue: 4 year: 2018 ident: 427_CR13 publication-title: Prog. Photovolt. Res. Appl. doi: 10.1002/pip.2959 contributor: fullname: RVK Chavali – volume: 4 start-page: 1491 issue: 6 year: 2014 ident: 427_CR64 publication-title: IEEE J. Photovolt. doi: 10.1109/JPHOTOV.2014.2358377 contributor: fullname: J Nakamura – volume: 19 start-page: 165 issue: 3 year: 2018 ident: 427_CR14 publication-title: Trans. Electr. Electron. Mater. doi: 10.1007/s42341-018-0026-8 contributor: fullname: H Park – volume: 4 start-page: 96 issue: 1 year: 2013 ident: 427_CR19 publication-title: IEEE J. Photovolt. doi: 10.1109/JPHOTOV.2013.2282737 contributor: fullname: M Taguchi – volume: 2019 start-page: 1909 year: 2019 ident: 427_CR32 publication-title: 2019 IEEE 46th Photovolt. Spec. Conf. (PVSC) IEEE doi: 10.1109/PVSC40753.2019.8980566 contributor: fullname: K Jumaa – volume: 2015 start-page: 259 year: 2015 ident: 427_CR66 publication-title: Proceedings of the 31st European Photovoltaic Solar Energy Conference and Exhibition München WIP contributor: fullname: SW Glunz – ident: 427_CR69 – volume: 17 start-page: 1193 issue: 9 year: 1975 ident: 427_CR8 publication-title: Solid State Commun. doi: 10.1016/0038-1098(75)90284-7 contributor: fullname: WE Speara – volume: 34 start-page: 541 issue: 1–4 year: 1944 ident: 427_CR21 publication-title: Sol. Energy Mater. Sol. Cells contributor: fullname: M Sasaki – volume: 3 start-page: 83 issue: 1 year: 2013 ident: 427_CR63 publication-title: IEEE J. Photovolt. doi: 10.1109/JPHOTOV.2012.2209407 contributor: fullname: A Descoeudres – volume: 20 start-page: 27 issue: 1 year: 1974 ident: 427_CR7 publication-title: Am. Inst. Phys. contributor: fullname: AJ Lewis – volume: 69 start-page: 52 issue: 1 year: 2018 ident: 427_CR41 publication-title: J. Electr. Eng. contributor: fullname: M Perný – volume: 186 start-page: 184 year: 2018 ident: 427_CR57 publication-title: Sol. Energy Mater. Sol. Cells doi: 10.1016/j.solmat.2018.06.020 contributor: fullname: F Haase – volume: 107 issue: 23 year: 2015 ident: 427_CR65 publication-title: Appl. Phys. Lett. doi: 10.1063/1.4937224 contributor: fullname: D Adachi – volume: 212 start-page: 1601 year: 2018 ident: 427_CR16 publication-title: Appl. Energy doi: 10.1016/j.apenergy.2017.12.041 contributor: fullname: X Sun – volume: 7 start-page: 471 issue: 6 year: 1999 ident: 427_CR3 publication-title: Prog. Photovolt. Res. Appl. doi: 10.1002/(SICI)1099-159X(199911/12)7:6<471::AID-PIP298>3.0.CO;2-7 contributor: fullname: JH Zhao – ident: 427_CR48 doi: 10.1109/NUSOD.2007.4349021 – volume: 51 issue: 12 year: 2018 ident: 427_CR68 publication-title: J. Phys. D Appl. Phys. doi: 10.1088/1361-6463/aaac6d contributor: fullname: J Liu – ident: 427_CR39 – volume: 34 start-page: 303 issue: 1–4 year: 1994 ident: 427_CR22 publication-title: Sol. Energy Mater. Sol. Cells doi: 10.1016/0927-0248(94)90054-X contributor: fullname: Y Hishikawa – volume: 4 start-page: 1433 issue: 6 year: 2014 ident: 427_CR53 publication-title: IEEE J. Photovolt. doi: 10.1109/JPHOTOV.2014.2352151 contributor: fullname: K Masuko – volume: 30 start-page: 3 issue: 1 year: 2021 ident: 427_CR70 publication-title: Prog. Photovolt. doi: 10.1002/pip.3506 contributor: fullname: MA Green – volume: 29 issue: 11 year: 2020 ident: 427_CR28 publication-title: Plasma Sources Sci. Technol. doi: 10.1088/1361-6595/abb7bd contributor: fullname: JT Gudmundsson – volume: 96 issue: 1 year: 2010 ident: 427_CR61 publication-title: Appl. Phys. Lett. doi: 10.1063/1.3284650 contributor: fullname: Q Wang – volume: 2018 start-page: 1 year: 2018 ident: 427_CR36 publication-title: 2018 China Semicond. Technol. Int. Conf. (CSTIC) IEEE contributor: fullname: Y Hsieh – volume: 23 start-page: 2834 issue: 8 year: 2021 ident: 427_CR29 publication-title: Green Chem. doi: 10.1039/D0GC03994B contributor: fullname: J Liang – volume: 17 start-page: 96 year: 2017 ident: 427_CR55 publication-title: Sol. Energy Mater. Sol. Cells doi: 10.1016/j.solmat.2017.05.042 contributor: fullname: A Richter – volume: 4 start-page: 1465 issue: 6 year: 2014 ident: 427_CR54 publication-title: IEEE Journal of Photovoltaics doi: 10.1109/JPHOTOV.2014.2350695 contributor: fullname: DD Smith – volume: 92 issue: 6 year: 2008 ident: 427_CR24 publication-title: Appl. Phys. Lett. doi: 10.1063/1.2857465 contributor: fullname: UK Das – volume: 1999 issue: 1 year: 2018 ident: 427_CR33 publication-title: AIP Conf. Proc. AIP Publ. LLC doi: 10.1063/1.5049296 contributor: fullname: A Mandal – volume: 352 start-page: 1972 issue: 9–20 year: 2006 ident: 427_CR38 publication-title: J. Non-Cryst. Solids doi: 10.1016/j.jnoncrysol.2006.02.028 contributor: fullname: Y Xu – ident: 427_CR50 – volume: 99 start-page: 123506 issue: 12 year: 2011 ident: 427_CR25 publication-title: Appl. Phys. Lett. doi: 10.1063/1.3641899 contributor: fullname: A Descoeudres – volume: 2 start-page: 1455 year: 2006 ident: 427_CR11 publication-title: 2006 IEEE 4th World Conf. Photovolt. Energy Conf. IEEE doi: 10.1109/WCPEC.2006.279743 contributor: fullname: E Maruyama – volume: 173 start-page: 37 year: 2017 ident: 427_CR59 publication-title: Sol. Energy Mater. Sol. Cells doi: 10.1016/j.solmat.2017.06.024 contributor: fullname: K Yoshikawa – volume: 49 start-page: 1187 issue: 16 year: 1982 ident: 427_CR9 publication-title: Phys. Rev. Lett. doi: 10.1103/PhysRevLett.49.1187 contributor: fullname: RA Street – volume: 452 start-page: 306 year: 2018 ident: 427_CR23 publication-title: Appl. Surf. Sci. doi: 10.1016/j.apsusc.2018.04.215 contributor: fullname: N Subjalearndee – volume: 2009 start-page: 001475 year: 2009 ident: 427_CR51 publication-title: 34th IEEE Photovolt. Specialists Conf. (PVSC) IEEE contributor: fullname: M Lu – volume: 46 start-page: 22067 issue: 22 year: 2015 ident: 427_CR37 publication-title: Funct. Mater. contributor: fullname: Y He – volume: 7 start-page: 1033 issue: 3–4 year: 2010 ident: 427_CR44 publication-title: Phys. Status Solidic doi: 10.1002/pssc.200982778 contributor: fullname: D Diouf – ident: 427_CR52 doi: 10.1002/(SICI)1099-159X(199911/12)7:6<471::AID-PIP298>3.0.CO;2-7 – volume: 23 start-page: 78 issue: 1 year: 2015 ident: 427_CR47 publication-title: Prog. Photovolt. Res. Appl. doi: 10.1002/pip.2400 contributor: fullname: Z Shu – ident: 427_CR1 – volume: 27 issue: 3 year: 2018 ident: 427_CR67 publication-title: Chin. Phys. B doi: 10.1088/1674-1056/27/3/038502 contributor: fullname: H Huang – ident: 427_CR62 doi: 10.1016/j.egypro.2011.06.122 – volume: 17 start-page: 183 issue: 3 year: 2009 ident: 427_CR4 publication-title: Prog. Photovolt. Res. Appl. doi: 10.1002/pip.892 contributor: fullname: MA Green – volume: 19 start-page: 326 issue: 3 year: 2011 ident: 427_CR46 publication-title: Prog. Photovolt. Res. Appl. doi: 10.1002/pip.1032 contributor: fullname: M Lu – volume: 18 start-page: 349 issue: 1 year: 2018 ident: 427_CR34 publication-title: Chin. Phys. B contributor: fullname: H You |
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