Understanding Early Failure Behavior in 3D-Interconnects: Empirical Modeling of Broadband Signal Losses in TSV-Enabled Interconnects

• Published in: IEEE transactions on electron devices Vol. 69; no. 11; pp. 1 - 7
• Main Authors: Coakley, Kevin J., Kabos, Pavel, Moreau, Stephane, Obeng, Yaw S.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.11.2022; The Institute of Electrical and Electronics Engineers, Inc. (IEEE); Institute of Electrical and Electronics Engineers
• Subjects: 3D-interconnects; Annealing; Broadband; chemical defects; dielectric polarization; empirical modeling; Engineering Sciences; Insertion loss; Integrated circuits; Interconnections; Optimization; Signal integrity; Silicon oxides; Silicon substrates; stochastic optimization; thermal cycling; Three dimensional models; TSV

We develop an empirical model for measured frequency-dependent insertion loss (<inline-formula> <tex-math notation="LaTeX">\vert \textit{S}_{\text{21}}\vert</tex-math> </inline-formula>). The model parameters are determined with a stochastic optimization implementat...