Direct detection of DNA using electrical double layer gated high electron mobility transistor in high ionic strength solution with high sensitivity and specificity

• Published in: Sensors and actuators. B, Chemical Vol. 271; pp. 110 - 117
• Main Authors: Chen, Yen-Wen, Tai, Tse-Yu, Hsu, Chen-Pin, Sarangadharan, Indu, Pulikkathodi, Anil Kumar, Wang, Hsin-Li, Sukesan, Revathi, Lee, Geng-Yen, Chyi, Jen-Inn, Chen, Chih-Chen, Lee, Gwo-Bin, Wang, Yu-Lin
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 15.10.2018; Elsevier Science Ltd
• Subjects: AlGaN/GaN HEMT; Biomarkers; Biosensors; Deoxyribonucleic acid; DNA; Electrical double layer; Electrons; Genomes; High electron mobility transistors; Mass spectrometry; Melt temperature; Sensitivity; Sensitivity and specificity of DNA detection; AlGaN/GaN HEMT; Electrical double layer; Sensitivity and specificity of DNA detection

•Electrical double layer (EDL) gated AlGaN/GaN HEMT has been used as DNA sensor for rapid DNA detection.•High sensitivity and selectivity is achieved; direct testing in physiological salt concentration.•Very low detection limit of 1 fM target DNA.•Selectivity elucidated for 6-,2-,1-base mismatch DNA...