Direct detection of DNA using electrical double layer gated high electron mobility transistor in high ionic strength solution with high sensitivity and specificity

•Electrical double layer (EDL) gated AlGaN/GaN HEMT has been used as DNA sensor for rapid DNA detection.•High sensitivity and selectivity is achieved; direct testing in physiological salt concentration.•Very low detection limit of 1 fM target DNA.•Selectivity elucidated for 6-,2-,1-base mismatch DNA...

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Published inSensors and actuators. B, Chemical Vol. 271; pp. 110 - 117
Main Authors Chen, Yen-Wen, Tai, Tse-Yu, Hsu, Chen-Pin, Sarangadharan, Indu, Pulikkathodi, Anil Kumar, Wang, Hsin-Li, Sukesan, Revathi, Lee, Geng-Yen, Chyi, Jen-Inn, Chen, Chih-Chen, Lee, Gwo-Bin, Wang, Yu-Lin
Format Journal Article
LanguageEnglish
Published Lausanne Elsevier B.V 15.10.2018
Elsevier Science Ltd
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Abstract •Electrical double layer (EDL) gated AlGaN/GaN HEMT has been used as DNA sensor for rapid DNA detection.•High sensitivity and selectivity is achieved; direct testing in physiological salt concentration.•Very low detection limit of 1 fM target DNA.•Selectivity elucidated for 6-,2-,1-base mismatch DNA.•Potential candidate for rapid DNA sensing in point of care diagnostics. In this research, we have realized an electrical double layer (EDL) gated high electron mobility transistor (HEMT) as DNA sensor. The sensing area on the gate electrode which is separated from the transistor channel is immobilized with probe DNA to capture target DNA from physiological salt environment. The detection limit of the sensor can be as low as 1 fM with very high sensitivity. The specificity of the DNA sensor is also demonstrated by controlling the hybridization temperature. By choosing the hybridization temperature slightly lower than the melting temperature of the well-matched sequence, the binding ratio can be controlled between the fully-matched and mismatched one. The sensor has demonstrated specificity, with the ability to achieve single base mismatch resolution. The sensor has the potential for rapid DNA sensing applications in cells, biomarkers and viruses.
AbstractList •Electrical double layer (EDL) gated AlGaN/GaN HEMT has been used as DNA sensor for rapid DNA detection.•High sensitivity and selectivity is achieved; direct testing in physiological salt concentration.•Very low detection limit of 1 fM target DNA.•Selectivity elucidated for 6-,2-,1-base mismatch DNA.•Potential candidate for rapid DNA sensing in point of care diagnostics. In this research, we have realized an electrical double layer (EDL) gated high electron mobility transistor (HEMT) as DNA sensor. The sensing area on the gate electrode which is separated from the transistor channel is immobilized with probe DNA to capture target DNA from physiological salt environment. The detection limit of the sensor can be as low as 1 fM with very high sensitivity. The specificity of the DNA sensor is also demonstrated by controlling the hybridization temperature. By choosing the hybridization temperature slightly lower than the melting temperature of the well-matched sequence, the binding ratio can be controlled between the fully-matched and mismatched one. The sensor has demonstrated specificity, with the ability to achieve single base mismatch resolution. The sensor has the potential for rapid DNA sensing applications in cells, biomarkers and viruses.
In this research, we have realized an electrical double layer (EDL) gated high electron mobility transistor (HEMT) as DNA sensor. The sensing area on the gate electrode which is separated from the transistor channel is immobilized with probe DNA to capture target DNA from physiological salt environment. The detection limit of the sensor can be as low as 1 fM with very high sensitivity. The specificity of the DNA sensor is also demonstrated by controlling the hybridization temperature. By choosing the hybridization temperature slightly lower than the melting temperature of the well-matched sequence, the binding ratio can be controlled between the fully-matched and mismatched one. The sensor has demonstrated specificity, with the ability to achieve single base mismatch resolution. The sensor has the potential for rapid DNA sensing applications in cells, biomarkers and viruses.
Author Pulikkathodi, Anil Kumar
Tai, Tse-Yu
Chyi, Jen-Inn
Sukesan, Revathi
Chen, Chih-Chen
Wang, Yu-Lin
Hsu, Chen-Pin
Wang, Hsin-Li
Sarangadharan, Indu
Chen, Yen-Wen
Lee, Geng-Yen
Lee, Gwo-Bin
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  email: ylwang@mx.nthu.edu.tw
  organization: Institute of Nanoengineering and Microsystems, National Tsing Hua University, Hsinchu 300, Taiwan, ROC
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Keywords AlGaN/GaN HEMT
Electrical double layer
Sensitivity and specificity of DNA detection
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Snippet •Electrical double layer (EDL) gated AlGaN/GaN HEMT has been used as DNA sensor for rapid DNA detection.•High sensitivity and selectivity is achieved; direct...
In this research, we have realized an electrical double layer (EDL) gated high electron mobility transistor (HEMT) as DNA sensor. The sensing area on the gate...
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SubjectTerms AlGaN/GaN HEMT
Biomarkers
Biosensors
Deoxyribonucleic acid
DNA
Electrical double layer
Electrons
Genomes
High electron mobility transistors
Mass spectrometry
Melt temperature
Sensitivity
Sensitivity and specificity of DNA detection
Title Direct detection of DNA using electrical double layer gated high electron mobility transistor in high ionic strength solution with high sensitivity and specificity
URI https://dx.doi.org/10.1016/j.snb.2018.05.119
https://www.proquest.com/docview/2088069799
Volume 271
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