High Characteristic Temperature InGaAsP/InP Tunnel Injection Multiple-Quantum-Well Lasers

• Published in: Chinese physics letters Vol. 27; no. 11; pp. 79 - 81
• Main Author: 汪洋 邱应平 潘教青 赵玲娟 朱洪亮 王圩
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.11.2010
• Subjects: InGaAsP; InP; MOCVD; 化学气相沉积; 多量子阱激光器; 德州仪器; 特征温度

We fabricate 1.5 μm InGaAsP/InP tunnel injection multiple？quantum-well （TI-MQW） Fabry-Perot （F-P） ridge lasers. The laser heterostructures, including an inner cladding layer and an InP tunnel barrier layer, are grown by metal-organic chemical-vapor deposition （MOCVD）. Characteristic temperature T0 o...